Transcript High Frequency Compact Noise Modelling of Multi

High Frequency
Compact Noise
Modelling of MultiGate MOSFETs
A.Lázaro*, A. Cerdeira**, B. Nae*, M. Estrada**, B.
Iñiguez*
Dpt. d’Enginyeria Electrònica, Elèctrica i Automàtica,
Universitat Rovira i Virgili, 43007 Tarragona,
Spain([email protected])
** CINVESTAV, Mexico City
Segmentation method
• We use the active line approach to extend the compact
model to high frequency operation. It is based on splitting
the channel into a number of elementary sections
• Our quasi-static small-signal equivalent circuit, to which
we add additional microscopic diffusion and gate shot
noise sources, is applied to each section
• Our charge control model allows to obtain analytical
expressions of the local small-signal parameters in each
segment
G
...
...
x
Cgc(x)
gch(x)
gm(x)
S
...
x+x
D
in(x)
Segmentation Method
Frequency noise behaviour of Fmin Wfin=10 nm,
Hfin=30 nm, tox=1.5 nm, tbox=50 nm,
100 fingers,VGS−VTH=0.5 V, VDS=1 V
at 10 GHz
Extrinsic noise parameters as function of
gate length for FinFET Wfin=10 nm,
Hfin=30 nm, tox=1.5 nm, tbox=50 nm,
100 fingers,VGS−VTH=0.5 V, VDS=1 V
at 10 GHz.
Analytical explicit model
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10
Drain
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10
Gate
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10
0.5
1
1.5
Gate Voltage (V)
2
1
Im(C)
Comparison of current noise
densities and imaginary part of
correlation coefficient as function
of gate voltage calculated with the
segmentation method (●) and the
singlepiece model (—) for a DG
MOSFET with L=1 μm, tox=2 nm,
ts=34 nm, VDS=2V, f=1 GHz).
Current Noise (A2/Hz)
Single-piece compact expressions to model the drain, gate current noise
spectrum densities and their correlations were derived for for DG MOSFETs
Compact Model
Segmentation method
0.5
0
0.5
1
1.5
Gate Voltage (V)
2