Transcript COSMA Software with

Corial 200RL
Equipment Control & Software
COSMA Software with:
 Edit menu for process recipe edition,
 Adjust menu for process optimizing,
 Maintenance menus for complete equipment control via
internet with VPN (Virtual Private Network).
CORS Software for:
 Data reprocessing (Measures and data comparison).
A Tool Organized in
Successive Levels
Server for
GUI
COSMA
Controller
Monitoring
Operator
Lots
Actions
COSMA
Supervisor
Remote GUI
Monitoring
Process
Controller
Embedded
control PU
Monitoring
Device
Controllers
Process
Actions
Embedded
control
function
Closed-loop
Physical
devices
Constructor
PC User
Diagram Modes
Stand-by
Mode
Production
Mode
Optimization
Mode
Normal
Step by step
Mode
Shut down
Mode
Errors
Operator
Production
Constructor
Mode
Maintenance
Constructor
A Communicant Tool
COSMA
GUI
WAN
VPN
ADSL
Fix IP
Firewall
Dedicated
Ethernet network
Customer Ethernet
Network
COSMA
Supervisor
Ethernet
Process Control
Unit (1)
Process
Control Unit (2)
Ethernet
Device Control
(1)
Device
Control (2)
RIE Reactor
Load-lock
Electronic Control
TMP Control
RF Generator
HT/BT Power Supplies
System
Reactor
TV
TMP
Dry Pump
ADP 122
Load-Lock Valve
Pumping System
Load-lock
Gate valve for
quick reactor
venting and
cleaning
Reactor Features
 Reactive Ion Etching source designed to operate with a
wide working pressure range (10 to 200 mT),
 The large cathode size enables batch etching of up to
three 3” wafers or up to one Ø150 mm wafer,
 Shuttles for loading and to enable etching of different sizes
and numbers of wafers,
 Helium assisted heat exchange between cathode, shuttle
with mechanical clamping to maintain shuttle temperature
below 50°C during etching.
Loading
Loading tool
Shuttle
Cathode
Loading
Loading tool
Shuttle
Cathode
Clamping
Shuttle
Cathode
Loading tool
Cooling
Shuttle
Cathode
Loading tool
Helium
Etching
PLASMA
Shuttle
Cathode
Loading tool
Helium
End of Etching
Shuttle
Cathode
Loading tool
Unloading
Loading tool
Shuttle
Cathode
Unloading
Loading tool
Shuttle
Cathode
ALUMINUM ETCHING
 Aluminum etching requirements:
 High etch rates and anisotropic profiles,
 Aluminium etch rate : 250 nm/min,
 After the aluminium etching phase, a passivation step avoids
corrosion due to AlCl3 trapped on the side walls during
aluminium etching,
 No damage after a week long moisture exposure test at
atmospheric pressure.
Process Specifications
For Aluminum Etching
PROCESS
Etch Rate
(nm/min)
RIE of Al with
PR mask
250
±5%
2.5
85° to 90°
RIE of Al/2%Cu
with PR mask
200
±5%
2
85° to 90°
Uniformity Selectivity
of Etch Rate against PR
Guaranteed Process
Results
Profile
Precise Monitoring
End of etching can be monitored using a CCD camera with
magnification > 120 X and a laser beam diameter ≤ 20 m. The laser spot is
located with a precise XY stage on the area to etch. When the substrate is
exposed the system detects automatically the change in reflectivity.
Laser Endpoint Detection
Laser beam
Photodiode
Reflected beam
Photoresist
Quartz
When laser beam reaches the substrate, the signal level
drops. This change enables automatic endpoint detection.
TRIMMING
Trimming Specifications:
 Uniformity of etching on 4”
wafers ≤ ± 0,5%.
 Uniformity
of
shift
in
frequency
on
packaged
devices: ≤ ± 5 KHz for a
120 KHz. Shift.
Process accuracy:
 Low etch etch rate,
 Linear relationship between
RF power and etch rate.
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Recap of Corial 200RL Features
 Reactive Ion Etching source which produces a uniform plasma in a
wide range of working pressure (10 to 200 mT) for fast etching of Al
and Al/2%Cu on up to 150 mm wafers,
 Helium assisted heat exchange to control shuttle temperature,
 Al Plasma passivation step provided with the process,
 Pumping system with gate valve for quick reactor maintenance,
 Laser endpoint with high magnification and small laser spot (25 µm) for
precise process monitoring,
 Possibility of SAW devices trimming using a dedicated shuttle.