Transcript Aucun titre de diapositive - TBS Engineering : Новости

Corial 200RL
Equipment Control & Software
COSMA Software with:
 Edit menu for process recipe edition,
 Adjust menu for process optimizing,
 Maintenance menus for complete equipment control via
internet with VPN (Virtual Private Network).
CORS Software for:
 Data reprocessing (Measures and data comparison).
A Tool Organized in
Successive Levels
Server for
GUI
COSMA
Controller
Monitoring
Operator
Lots
Actions
COSMA
Supervisor
Remote GUI
Monitoring
Process
Controller
Embedded
control PU
Monitoring
Device
Controllers
Process
Actions
Embedded
control
function
Closed-loop
Physical
devices
Constructor
PC User
Diagram Modes
Stand-by
Mode
Production
Mode
Optimization
Mode
Normal
Step by step
Mode
Shut down
Mode
Errors
Operator
Production
Constructor
Mode
Maintenance
Constructor
A Communicant Tool
COSMA
GUI
WAN
VPN
ADSL
Fix IP
Firewall
Dedicated
Ethernet network
Customer Ethernet
Network
COSMA
Supervisor
Ethernet
Process Control
Unit (1)
Process
Control Unit (2)
Ethernet
Device Control
(1)
Device
Control (2)
RIE Reactor
Load-lock
Electronic Control
TMP Control
RF Generator
HT/BT Power Supplies
System
Reactor
TV
TMP
Dry Pump
ADP 122
Load-Lock Valve
Pumping System
Load-lock
Gate valve for
quick reactor
venting and
cleaning
Reactor Features
 Reactive Ion Etching source designed to operate with a
wide working pressure range (10 to 200 mT),
 The large cathode size enables batch etching of up to
three 3” wafers,
 Shuttles for loading and to enable etching of different sizes
and numbers of wafers,
 Helium assisted heat exchange between cathode, shuttle
and wafers with mechanical clamping to maintain sample
temperature below 100°C during etching.
Loading
Loading tool
Shuttle
Cathode
Loading
Loading tool
Shuttle
Cathode
Clamping
Shuttle
Cathode
Loading tool
Cooling
Shuttle
Cathode
Loading tool
Helium
Etching
PLASMA
Shuttle
Cathode
Loading tool
Helium
End of Etching
Shuttle
Cathode
Loading tool
Unloading
Loading tool
Shuttle
Cathode
Unloading
Loading tool
Shuttle
Cathode
Shuttle for Ø200 mm Wafer
Goal: Ensure wafer cooling
Altymid Ring
Work Area
Wafer
Graphite Plate
Pression He (Torrs)
- He Pressure -
Pression He en fonction du débit
- He Pressure Versus He Flow Rate 15
10
5
0
O’ Ring
Base Plate
0
5
10
15
20
25
Débit He - He Flow Rate - (sccm)
He Pressure vs He Flow Rate
Process Development
Development is carried
out through Design of
Experiments (DOE)
Optimisation of Via-hole
process:
Customer Benefit
Process modelization
enables fast matching with
customer requirements.




Etch rate,
Uniformity of etch rate,
Selectivity against resist,
Etch profile.
Guaranteed Process
Results
VIA-HOLE PROCESS (1)
Etch Rate versus CH4 and
Working Pressure
Uniformity of Etch Rate
versus CH4 and Pressure
VIA-HOLE PROCESS (2)
Selectivity against photoresist
versus CH4 and Pressure
Selectivity against photoresist
versus CH4 and RF Power
Process Specifications
For a Batch of Three 3” Wafers
Etch Rate (*)
(µm/min)
Uniformity of
Etch Rate
Selectivity
against PR
Profile
3
< ±6%
> 25
85°
NOTE : The specifications in etch rate and uniformity of etch rate are
achieved when the via-hole has a uniform size ≥ (50 ±1)µm
Guaranteed Process
Results
Precise Monitoring
End of etching can be monitored using a CCD camera with magnification
> 120 X and a laser beam diameter ≤ 20 m. The laser spot is located with a
precise XY stage on via-hole area. When the gold film is exposed the system
detects automatically the change in reflectivity level.
Signal
Laser Endpoint Detection
Laser beam
Photodiode
Time
Reflected beam
Photoresist
Gold layer
When laser reaches the gold, the signal level increases.
This signal change enables automatic endpoint detection.
Recap of Corial 200RL Features
 Reactive Ion Etching source which produces a uniform plasma in a
wide range of working pressure (10 to 200 mT) for fast etching of viaholes in GaAs on up to three 75 mm wafers,
 Helium assisted heat exchange to maintain resist integrity,
 Various shuttles to optimize each process configuration (wafer sizes,
number of wafers, material to etch, etc…),
 Laser endpoint with high magnification and small laser spot (25 µm) for
precise process monitoring,
 Wide process range with capability to adjust the etch profile according
to the working pressure.