Transcript Aucun titre de diapositive - TBS Engineering : Новости

Corial 200IL
Equipment Control & Software
COSMA Software with:
 Edit menu for process recipe edition,
 Adjust menu for process optimizing,
 Maintenance menus for complete equipment control via
internet with VPN (Virtual Private Network).
CORS Software for:
 Data reprocessing (Measures and data comparison).
A Tool Organized in
Successive Levels
Server for
GUI
COSMA
Controller
Monitoring
Operator
Lots
Actions
COSMA
Supervisor
Remote GUI
Monitoring
Process
Controller
Embedded
control PU
Monitoring
Device
Controllers
Process
Actions
Embedded
control
function
Closed-loop
Physical
devices
Constructor
PC User
Diagram Modes
Stand-by
Mode
Production
Mode
Optimization
Mode
Normal
Step by step
Mode
Shut down
Mode
Errors
Operator
Production
Constructor
Mode
Maintenance
Constructor
A Communicant Tool
COSMA
GUI
WAN
VPN
ADSL
Fix IP
Firewall
Dedicated
Ethernet network
Customer Ethernet
Network
COSMA
Supervisor
Ethernet
Process Control
Unit (1)
Process
Control Unit (2)
Ethernet
Device Control
(1)
Device
Control (2)
System
ICP Reactor
Load-lock
Electronic Control
TMP Control
ICP Generator
RF Generator
HT/BT Power Supplies
ICP Matching network
System
Load-lock
ICP Matching network
ICP Reactor
Matching Network
Throttle Valve
TMP
Gas box
Lift
Reactor
TV
TMP
Dry Pump
ADP 122
Load-Lock Valve
Pumping System
Load-lock
Gate valve for
quick reactor
venting and
cleaning
Reactor Features (1)
 New Inductively Coupled Plasma source with hot walls to reduce
polymer condensation and to enhance plasma cleaning.
It
produces High Density Plasma in a wide working pressure range (5 to
100 mT) for fast etching of up to Ø200 mm wafers,
 Helium assisted heat exchange between cathode, shuttle and wafer
with mechanical clamping to maintain wafer temperature below
100°C,
Numerous plasma modes accessible in the same process:
 Inductively Coupled Plasma + RF biasing
 Reactive Ion Etching
 Inductively Coupled Plasma for low damage etching.
Reactor Features (2)
 Reactor with hot walls enables:
 Highly selective processes,
 Low contamination of the process chamber.
 Low plasma potential (< 25 Volts) and automatic self
bias regulation giving rise to precise control of ion
energy enables (≤ 40 eV):
 Low damage etching with no RF biasing,
 Isotropic etching with low RF biasing,
 Anisotropic etching with high RF biasing.
ICP Source
Match Box
PLASMA
RF
generator at
2 MHz
Electron density : 1011 to 1012 e/cm3
ICP Reactor Design
Laser window
Reactor
2 MHz Match Box
ICP Reactor Design
Laser window
Ø280 mm coil
Gas shower (Thermally isolated)
Quartz tube
Match Box
ICP Reactor Design
Shielding
Quartz tube
(Thermally
isolated)
(Thermally isolated)
Water cooled
coil
The reactor walls are thermally isolated. They are getting hot during plasma
etching. This strongly reduces the polymer condensation and the cross
contamination between different processes.
Loading
Loading tool
Shuttle
Cathode
Loading
Loading tool
Shuttle
Cathode
Clamping
Shuttle
Cathode
Loading tool
Cooling
Shuttle
Cathode
Loading tool
Helium
Etching
PLASMA
Shuttle
Cathode
Loading tool
Helium
End of Etching
Shuttle
Cathode
Loading tool
Unloading
Loading tool
Shuttle
Cathode
Unloading
Loading tool
Shuttle
Cathode
Example of Shuttle
Goal: Ensure wafer cooling
Altymid Ring
Graphite Plate
O’ Ring
Base Plate
Pression He (Torrs)
- He Pressure -
Wafer
Work Area
Pression He en fonction du débit
- He Pressure Versus He Flow Rate 15
10
5
0
0
5
10
15
20
25
Débit He - He Flow Rate - (sccm)
He Pressure vs He Flow Rate
The shuttles are designed according to wafer size, number of wafers and
process recipes for optimum process results. The use of dedicated
shuttles according to process strongly reduces the cross contamination.
Precise Monitoring
The latest submicron technology needs precise monitoring:
 Automatic endpoint detection,
 CCD camera with magnification > 120 X,
 Laser beam diameter ≤ 20 m.
A CCD camera and laser diode, in the same measuring
head, enables simultaneous visualization of the die surface
and the laser beam impact on it. A laser spot, of diameter 20
µm, facilitates the record of interference signals.
Signal
Laser Endpoint Detection
Laser beam
Photodiode
Time
Interferences
Reflected beam 1
Interface 1
Reflected beam 2
Interface 2
Refractive Index = n
Underlayer
Interferences lead to a periodic signal having a l/2n period versus time
Recap of Corial 200IL Features
 New Inductively Coupled Plasma source with hot walls which reduces
polymer condensation, enhances plasma cleaning, minimizes cross
contamination. It produces High Density Plasma for uniform etching of
films on batch of seven 2” wafers or wafer size up to 200 mm,
 Low plasma potential (<25 Volts) and automatic self bias regulation to
precisely control the ion energy,
 Helium assisted heat exchange to maintain resist and device integrity,
 Various shuttles to reduce cross contamination. They are designed to fit
with wafers and processes recipes for the best process results,
 Wide process range from isotropic to anisotropic and fast etch rate to
low etch rate with very high selectivity,
 Laser endpoint for precise process monitoring,
 Capability of many etching modes from RIE, ICP + RIE and ICP in the
same process recipe.