Transcript Aucun titre de diapositive - TBS Engineering : Новости

Corial 200
Equipment Control & Software
COSMA Software with:
 Edit menu for process recipe edition,
 Adjust menu for process optimizing,
 Maintenance menus for complete equipment control via
internet with VPN (Virtual Private Network).
CORS Software for:
 Data reprocessing (Measures and data comparison).
A Tool Organized in
Successive Levels
Server for
GUI
COSMA
Controller
Monitoring
Operator
Lots
Actions
COSMA
Supervisor
Remote GUI
Monitoring
Process
Controller
Embedded
control PU
Monitoring
Device
Controllers
Process
Actions
Embedded
control
function
Closed-loop
Physical
devices
Constructor
PC User
Diagram Modes
Stand-by
Mode
Production
Mode
Optimization
Mode
Normal
Step by step
Mode
Shut down
Mode
Errors
Operator
Production
Constructor
Mode
Maintenance
Constructor
A Communicant Tool
COSMA
GUI
WAN
VPN
ADSL
Fix IP
Firewall
Dedicated
Ethernet network
Customer Ethernet
Network
COSMA
Supervisor
Ethernet
Process Control
Unit (1)
Process
Control Unit (2)
Ethernet
Device Control
(1)
Device
Control (2)
System
Reactor
TMP
Electronic Control
TMP Control
UHF Generator
RF Generator
HT/BT Power Supplies
Cathode Lift
Wiring Interface
Magnetron
System
Magnetron
Isolator
Matching Network
Throttle Valve
TMP
Gas box
Lift
Pumping System
Reactor
TV
TMP
Dry Pump
ADP 122
Gate valve for
quick reactor
venting
Reactor Features (1)
 New microwave (2.45 GHz) plasma source with hot walls to reduce
polymer condensation and to enhance plasma cleaning.
It
produces High Density Plasma in a wide working pressure range (10
to 100 mT) for fast etching of up to Ø200 mm wafers,
 Helium assisted heat exchange between cathode, shuttle and wafer or
packaged die with mechanical clamping to maintain sample
temperature below 100°C,
Numerous plasma modes accessible in the same process:
 Microwave High Density Plasma + RF biasing
 Reactive Ion Etching
 Microwave High Density Plasma for silicon thinning.
Reactor Features (2)
 Reactor with hot walls enables:
 Highly selective processes,
 Low contamination of the process chamber.
 Very low plasma potential (< 2 Volts) and automatic self
bias regulation giving rise to precise control of low ion
energy levels (< 15 eV),
 Enable low damage etching,
 Minimal sputtering of metal lines,
 Isotropic and anisotropic etching.
Magnetron
High Density Plasma Source
Coupling
Microwaves 2.45 GHz
PLASMA
Device
Electron density : 1011 to 1012 e/cm3
HDP Reactor Design
Laser window
Reactor
Coupling device
HDP Reactor Design
Laser window
Microwave cavity
Gas shower (Thermally isolated)
Quartz tube and shielding
Coupling device
(Thermally isolated)
Reactor walls are thermally isolated. They are getting hot during etching. This
enables selective etching of SiO2 against SiN, TiN and polysilicon.
Loading
Loading tool
Shuttle
Cathode
Loading
Loading tool
Shuttle
Cathode
Clamping
Shuttle
Cathode
Loading tool
Cooling
Shuttle
Cathode
Loading tool
Helium
Etching
PLASMA
Shuttle
Cathode
Loading tool
Helium
End of Etching
Shuttle
Cathode
Loading tool
Unloading
Loading tool
Shuttle
Cathode
Unloading
Loading tool
Shuttle
Cathode
Some Process Specifications
Specifications : HDP + RF biasing
Process
Underlayer
Etch Rate
(µm/min)
Polyimide
Si3N4
3
>50
Si3N4
SiO2
0.5
3
SiO2
SiO2
0.2
1
SiO2 / TiN (*)
TiN
0.05
>20
(High selectivity)
Selectivity
(*) High selectivity requires temperature control of the sample to etch.
Helium Backside Cooling
PLASMA
Shuttle
Cathode
Control of sample temperature by He cooling:
 Prevents metal lines lift-off,
 Maintains electrical functionality.
Example of Shuttle
Goal: Ensure wafer cooling
Altymid Ring
Graphite Plate
O’ Ring
Base Plate
Pression He (Torrs)
- He Pressure -
Wafer
Work Area
Pression He en fonction du débit
- He Pressure Versus He Flow Rate 15
10
5
0
0
5
10
15
20
25
Débit He - He Flow Rate - (sccm)
He Pressure vs He Flow Rate
The shuttles are designed according to wafer size, the shape of
packaged dies for optimum process results. The use of dedicated
shuttles according to sample to etch facilitates the use of the system.
Shuttle for Packaged Dies
Altymid Ring
Goal: Ensure packaged
die cooling
Graphite Cover
Packaged Die Bonded With Vacuum
Grease on Package Adaptor
O’ring
Base Plate
He Pressure > 80 Torrs
with 25 sccm of He flow
to ensure good cooling.
Preventing Overetch
The latest submicron technology needs precise delayering:
 Automatic endpoint detection,
 CCD camera with magnification > 120 X,
 Laser beam diameter ≤ 20 m.
A CCD camera and laser diode, in the same measuring
head, enables simultaneous visualization of the die surface
and the laser beam impact on it. A laser spot, of diameter 20
µm, facilitates the record of interference signals.
Signal
Laser Endpoint Detection
Laser beam
Photodiode
Time
Interferences
Reflected beam 1
Interface 1
Reflected beam 2
Interface 2
Refractive Index = n
Underlayer
Interferences lead to a periodic signal having a l/2n period versus time
Laser Endpoint Detection
Laser beam
Laser beam
Laser beam
Si3N4
SiO2
Al
Si
SiO2
Al
Si
Al
SiO2
Si
Al reflects the
laser, there is
no interference
effect.