Transcript Oxide Thickness_Radiation

IBM Foundry Oxide Thickness
Lithography
Process
Operating
Oxide
Name
Voltage
Thickness
nm
0.25 µm
0.13 µm
Satish Dhawan, Yale University
6SF
8RF
2.5
5
3.3
7
1.2 & 1.5
2.2
2.2 & 3.3
5.2
September 21, 2009
Non IBM Foundry ICs
Company
IHP
Device
Process
Foundry
Oxide
Time in
Dose before
Observation
Name/ Number
Name
Thickness
Seconds
Damage seen
Damage Mode
Country
nm
ASIC custom
SG25V GOD
IHP, Germany
5
53 Mrad
slight damage
XySemi
FET 2 amps
HVMOS20080720
China
7
52 Mrad
minimal damage
XySemi
XP2201
HVMOS20080720
China
7
In Development
XySemi
XPxxxx
China
7
In Development
Synch Buck
XySemi
XP5062
China
12.3
800
44 krad
loss of Vout regulation
20
420
23 krad
abrupt failure
HVMOS20080720
TI
TPS54620
LBC5 0.35 µm
loss of Vout regulation
IR
IR3841
9 & 25
230
13 Krads
Enpirion
EN5365
CMOS 0.25 µm
Dongbu HiTek,
Korea
5
11,500
85 krad
Enpirion
EN5382
CMOS 0.25 µm
Dongbu HiTek,
Korea
5
2000
111 Krads
Enpirion
EN5360 #2
SG25V (IHP)
IHP, Germany
5
22 Days
100 Mrads
Minimal Damage
Enpirion
EN5360 #3
SG25V (IHP)
IHP, Germany
5
10 Days
48 Mrads
Minimal Damage
Satish Dhawan, Yale University
September 21, 2009
Increasing Input
Current,
loss of Vout regulation
Tunneling Region
Thickness ~ 5 nm
Oxide Trap Region
-+ Fixed Charge
States
V
-+
+Gate
+
- +
+- +
Switching Charge
States
Oxide
GND
Si
Fig A: Physical Location of Defects from their Electrical
response in CMOS devices;
ref T.R> Oldham
No change in the average current for 200 Mega rads
Pomona Box
30 meter Coax
1Ω
330 2 Watts
Source
DMM
DC mV
Drain
~ 0.070 Amps
Reading = ~ 0.035 Amps
@ 50% Duty Cycle
HEMT
Pulse
Generator
0.1 – 2 MHz
0 to -5 V
Gate
100
50 % Duty
Cycle
50 Ω.
Terminator
GND
Powered
FET
S
D
G
July 28. 2009
Power
Supply
V out = 20
FET Setup for Proton Radiation Exposure @ LANSCE
2 Shorted
FETs
To Keithley Instruments 2701 Scanning Voltmeter with 7706 Card
Relay Current Out
121
A Board: Channels 101 -104
B Board: Channels 105 - 108
C Board: Channels 109 - 112
D Board: Channels 113 - 116
104
Vout/ Load
103
Current IN Voltage IN
102
101
CHANNEL
Numbers
0.5 Ohms
DAC: 123, 124
DIO : 121,122
+
Power Cable
Colors
Can Add
Extender
Cable
Input Power
Red
R
-
Orange
Molex
9 pin
Female
Molex
9 pin
Male
BK/O
Black
Blue
8 Fly Wires
Solder to
Eval Board
5 ft Length
0.05 Ohms
Yellow
Blue/Y or Black
Green
+
DC-DC
Evaluation
Board
Model 250
Yale University
May 22, 2008
Output Power
-
DC-DC Converter Voltage ratio = 8/10
Load: Rated Current or maximum without cooling ~ 1 amp
Setup for 4 EVAL Boards
Measure Bias Current with Load disconnected
Power Supply
V out > 5 – 20 Volts
4 Wire Current shunt
~ 0.5 Amps
.
VInput
GND
5.5 V max to prevent
damage.
V Output Monitor 2 wire Differential
Twisted Pair Preferred
V Input Monitor. 2 Wire Differential
Agilent 34970A &
Multiplexer 33901A
to Monitor I & V
Buck Regulator Eval Board
Size = 3 inch x 3.5 inch
Twisted Pair Preferred
Solder all wires ????
V Output Monitor 2 wire Differential
4 Wire Current shunt
1 to 5 Amps
.
GND
V Output = 1.5 V
.
V Output Monitor 2 wire Differential
Load Resistor
= 0.3 to 1.5 Ώ
Switch on/off
Line Drop ~ 0.25 volts @ 6 amps in each Leg ???
Banana Jacks / Solder Wires
Satish Dhawan, Yale University
April 21. 2008
DC-DC Regulator Setup for Radiation Exposure