Transcript Editing Technology

Editing Technology
Editing the standard MOCMOS
technology of GNU Electric
version 8.08
by Kazzz (a Japanese engineer)
Revision: 0.5
Date: June 07th, 2009
1
Revision history
Work periods ※
Revision
0.5
①
②
③
March 16th - April 10th, 2009
May 11th - May 15th, 2009
June 5th – June 7th, 2009
Editing Technology
Remarks
Initial effort to invite some
valuable feedbacks from the user
community
※ Mostly spending after the office hours …
2
Objectives
Editing Technology
① To enhance the standard MOCMOS technology so that it
has two resistor types below for analog circuit design
 N-well resistor
 Poly-2 high-resistor
② To make the entire technology including the newly added
resistors
 NCC tool applicable
 DRC tool applicable
③ To make the newly added resistor types SPICE-parameterextraction applicable
3
Acknowledgments
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 Thanks to Dr. Steven M. Rubin and all the developers of this
VLSI design suite for providing such a fascinating tool under
GNU General Public License.
 Availability of this tool has made me decide to re-study
integrated circuit design, especially CMOS, after about 2decade gap.
 More than 20 years ago, having this kind of tool on a
personal computer was beyond dream, especially for those
who were using the first generation of GE Calma® on a minicomputer having only 64-KByte of main memory!
4
Warnings
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① Throughout this document, the physical parameters such as
sheet resistance, parasitic capacitance per unit length,
design rules, etc. are all artificial and do not aspire to any
accuracy.
② As stated in the previous slide, the main aim of this
document is to capture and clarify different steps that may
be required to introduce a new technology to GNU Electric.
③ For more realistic design and simulation, we MUST consult
our foundry or in-house process engineers about those
parameters and need fine tunings.
5
References
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Please refer to :
[1]
[2] http://java.com/en/
for Java
[3] http://www.eclipse.org/ for Eclipse
[4] http://www.staticfreesoft.com/productsFree.html for GNU Electric
✔
6
Java Runtime and SDK
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 The tools listed below are assumed as Java runtime and development environment
Tool
Version
Install location
OS
Windows XP SP3
Japanese
Java Runtime
Java 6
Update 13
Java 3D
1.5.2
C:\Program Files\Java\Java3D\1.5.2\
Java SDK
Java SED Kit 6
Update 13
C:\Program Files\Java\jdk1.6.0_13\
C:\Windows
 this may look like
C:\Program Files\Java\jre6\
The images were captured on Japanese Windows throughout this document.
Therefore, wherever you see a Yen mark
in a file path, please understand that
it corresponds to a “back slash” character in the non-Japanese world.
7
Some icons used throughout this presentation
8.2
Editing Technology
Section of the manual to be referred to
 Duplicate the N-well
# 01
# 02
# 03
Micro-steps to be followed sequentially
8
The final course materials
Editing Technology
Here is the latest and final course materials as of June 07th, 2009.
You will find some intermediate materials embedded in this
document, which were created while studying about this theme.
Return to this slide after reaching the end of this document; far
more than 240 slides.
9
Editing Technology
Index
Part-I
Editing the Technology Skeleton
Part-II
Testing the Technology Skeleton
Part-III
Tuning the Technology for LT-Spice Simulation
Part-IV
Editing the Design Rules
Part-V
Testing the Design Rules
10
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11
01. Convert the existing technology for editing
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8.2
# 01
 Assume use of 3 metal layers
12
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# 02
# 03
OK
Cancel
※ Images are captured on Japanese Windows XP
13
# 04
# 05
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 Let the new technology name be “mocmos-plus.”
# 06
14
02. Editing layer cells for N-well resistor
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8.4
The manual says …
15
 The cross-sectional view of an N-Well resistor under its contact node will be …
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 Physically the same as but logically different from N-Select layer
Metal-1
Oxide
Oxide
N-Well-Resistor-Plus
N-Well-Resistor
P-Base
 Physically the same as but logically different from N-Well layer
16
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8.4
 Duplicate the N-well to derive “N-Well-Resistor”
# 01
# 02
# 03
17
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# 04
 Don’t change GDS-II layer as this has the same
physical layer as “N-Well”
18
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 Let the boarder be “solid-thick” style
# 05
# 06
19
 Duplicate the N-select for better Ohmic contact
# 07
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# 08
# 09
20
# 10
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 Don’t change GDS-II layer as this has the same
physical layer as “N-Select”
21
 Change the layer function and boarder style
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# 11
# 12
# 13
22
03. Editing a layer cell for Polysilicon-2 resistor
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 Polysilicon-2 resistor will be made as below

Polysilicon-2-HighResistor prevents Polysilicon-2-Resistor from
being highly doped, hence, high sheet resistance.
Polysilicon-2-HighResistor
Top view
Polysilicon-2-Resistor = Polysilicon-2


Physically the same as but logically different from Polysilicon-2 layer
Regions uncovered by Polysilicon-2-HighReistor will be highly doped,
hence, low ohmic contact resistance
23
Editing Technology
 The cross-sectional view of a Polysilicon-2 resistor under its contact node will be …
 Physically the same as but logically different from Polysilicon-2 layer
Metal-1
Oxide
Polysilicon-2-Resistor
Oxide
P-Base
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8.4
 Duplicate the polysilicon-2
# 01
# 02
# 03
25
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# 04
 Don’t change GDS-II layer as this has the same
physical layer as “Polysilicon-2”
Just a guess
26
 Change the boarder style and color
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# 05
# 06
27
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# 07
# 08
 Confirm that these 3 layers have been added
28
04. Editing a layer cell for Polysilicon-2 high-resistor
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8.4
 Duplicate the polysilicon-2
# 01
# 02
# 03
29
# 04
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Just a place filler
Above Poly2 by 1.0
30
# 05
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 Confirm that these 4 layers have been added
31
05. Editing an arc cell for N-well resistor
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8.5
 Duplicate the N-well
# 01
# 02
# 03
32
# 04
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33
 Change the layer to “N-Well-Resistor”
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# 05
# 06
 Notice that the boarder style has been changed
34
 Change the min. y size of both the boxes to “5”
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# 07
# 08
 Then optionally move them down so that the top ycoordinate be zero (at the origin)
35
06. Editing an arc cell for Polysilicon-2 resistor
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8.5
 Duplicate the Polysilicon-2
# 01
# 02
# 03
36
# 04
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37
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# 05
# 06
 Notice that the boarder style and color
have been changed
38
 Keep the min. y size of both the boxes to “3”
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# 07
39
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# 08
 Confirm that these 2 arcs have been added
40
07. Editing an arc cell for Polysilicon-2 high-resistor
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8.5
 Duplicate the Polysilicon-2
# 01
# 02
# 03
41
# 04
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42
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# 05
# 06
 Notice that the boarder style and color
have been changed
43
 Keep the min. y size of both the boxes to “3”
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# 07
44
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# 08
 Confirm that these 3 arcs have been added
45
08. Editing a pin node for N-well resistor
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8.6
 Duplicate the N-well pin
# 01
# 02
# 03
46
# 04
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47
 Change the layer of each of the four boxes to “N-Well-Resistor”
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# 05
48
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 Confirm the layer used
# 06
# 07
49
 Change the port name of each of the four examples
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# 08
# 09
50
 Change the connectivity of the main example
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# 10
 Only “N-Well-Resistor” layer can
connect to this port
51
 Confirm that the connectivity of the other examples is all disallowed
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# 11
52
09. Editing a pure node for N-well resistor
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8.6
 Duplicate the N-well node
# 01
# 02
# 03
53
# 04
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54
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 Change the function
# 05
# 06
 Change the layer of each box of the four examples
# 07
55
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# 08
 Notice that the boarder style
has been changed
56
 Delete the current port “well” from each of the four examples
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# 09
 As this node is to be a resistor, there must be two ports!
n-well-res-1
n-well-res-2
57
 After deleting the ports, only two boxes should exist for each example
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# 10
58
 Add new ports using “artwork technology”
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# 11
 Name the port
# 12
59
 Change the size of port so that it fits the left-side edge
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# 13
60
 Move the port onto the left-side edge
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# 14
 Similarly create a port on right-side edge
# 15
61
 Repeat the steps to add ports to the other examples
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# 16
62
 Confirm the layers used
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# 17
63
 Confirm the ports created
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# 18
64
 Set the connectivity of the ports for the main example
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# 19
65
 Confirm that the connectivity of the other examples is all disallowed
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# 20
66
 Check the number of objects contained in this cell
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# 21
1 x 4 examples
1 x 4 examples
2 ports x 4 examples
2 ports x 4 examples
67
10. Editing a contact node for N-well resistor
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8.6
 Duplicate the Metal-1-N-Well-Con node
# 01
# 02
# 03
68
# 04
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69
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 Change the function
# 05
# 06
70
 Change the layer of each box of the four examples
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# 07
71
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# 08
72
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 Change the outer-most box (N-well resistor) size as below
# 09
12x12
29x12
12x29
29x29
73
 Change the port name of the four examples
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# 10
# 11
74
 Confirm the layers used
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# 12
75
 Confirm the ports created
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# 13
76
 Set the connectivity of the port for the main example
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# 14
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 Confirm that the connectivity of the other examples is all disallowed
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# 15
78
 Check the number of objects contained in this cell
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# 16
79
11. Editing a pin node for Polysilicon-2 resistor
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8.6
 Duplicate the Polysilicon-2 pin
# 01
# 02
# 03
80
# 04
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81
 Change the layer of each of the four boxes to “Polysilicon-2-Resistor”
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# 05
82
 Confirm the layer used
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# 06
# 07
83
 Change the port name of each of the four examples
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# 08
# 09
84
 Change the connectivity of the main example
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# 10
 Only “Polysilicon-2-Resistor” layer
can connect to this port
85
 Confirm that the connectivity of the other examples is all disallowed
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# 11
86
12. Editing a pin node for Polysilicon-2 high-resistor
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8.6
 Duplicate the Polysilicon-2 pin
# 01
# 02
# 03
87
# 04
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88
 Change the layer of each of the four boxes to “Polysilicon-2-HighResistor”
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# 05
89
 Confirm the layer used
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# 06
# 07
90
 Change the port name of each of the four examples
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# 08
# 09
91
 Change the connectivity of the main example
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# 10
 Only “Polysilicon-2-HighResistor”
layer can connect to this port
92
 Confirm that the connectivity of the other examples is all disallowed
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# 11
93
13. Editing a pure node for Polysilicon-2 resistor
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8.6
 Duplicate the Polysilicon-2 node
# 01
# 02
# 03
94
# 04
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95
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 Change the function
# 05
# 06
 Change the layer of each box of the four examples
# 07
96
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# 08
 Notice that the boarder style
and color have been changed
97
 Delete the current port “polysilicon-2” from each of the four examples
Editing Technology
# 09
 As this node is to be a resistor, there must be two ports!
poly-2-res-1
poly-2-res-2
98
 After deleting the ports, only two boxes should exist for each example
Editing Technology
# 10
99
 Add new ports using “artwork technology”
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# 11
 Name the port
# 12
100
 Change the size of port so that it fits the left-side edge
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# 13
101
 Move the port onto the left-side edge
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# 14
 Similarly create a port on right-side edge
# 15
102
 Repeat the steps to add ports to the other examples
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# 16
103
 Confirm the layers used
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# 17
104
 Confirm the ports created
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# 18
105
 Set the connectivity of the ports for the main example
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# 19
106
 Confirm that the connectivity of the other examples is all disallowed
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# 20
107
 Check the number of objects contained in this cell
Editing Technology
# 21
1 x 4 examples
1 x 4 examples
2 ports x 4 examples
2 ports x 4 examples
108
14. Editing a pure node for Polysilicon-2 high-resistor
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8.6
 Duplicate the Polysilicon-2 node
# 01
# 02
# 03
109
# 04
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110
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 Change the function
# 05
# 06
 Change the layer of each box of the four examples
# 07
111
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# 08
 Notice that the boarder style
and color have been changed
112
 Delete the current port “polysilicon-2” from each of the four examples
Editing Technology
# 09
 As this node is to be a resistor, there must be two ports!
poly-2-hres-1
poly-2-hres-2
113
 After deleting the ports, only two boxes should exist for each example
Editing Technology
# 10
114
 Create different components for the main example modifying the existing ones
Editing Technology
# 11
115
 Copy and edit the components for the main example to create the others
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# 12
116
 Assemble the components for each example
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# 13
117
 Confirm the layers used
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# 14
118
 Confirm the ports created
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# 15
119
 Set the connectivity of the ports for the main example
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# 16
120
 Confirm that the connectivity of the other examples is all disallowed
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# 17
121
 Check the number of objects contained in this cell
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# 18
1 x 4 examples
2 x 4 examples
2 ports x 4 examples
2 ports x 4 examples
122
15. Editing a contact node Polysilicon-2 resistor
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8.6
 Duplicate the Metal-1-Polysilicon-2-Con node
# 01
# 02
# 03
123
# 04
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124
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 Confirm the function
# 05
# 06
125
 Change the layer of each box of the four examples
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# 07
126
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# 08
127
 Confirm the outer-most box (Polysilicon-2 resistor) size as below
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# 09
10x10
14x10
10x14
14x14
128
 Change the port name of the four examples
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# 10
# 11
129
 Confirm the layers used
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# 12
130
 Confirm the ports created
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# 13
131
 Set the connectivity of the port for the main example
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# 14
132
 Confirm that the connectivity of the other examples is all disallowed
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# 15
133
 Check the number of objects contained in this cell
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# 16
134
12. Delete two scalable transistors to avoid errors
when converting the library to a new technology
Editing Technology
This is a tentative patch.
There must be another solution.
135
13. Convert the library to technology
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8.2
# 01
# 02
# 03
136
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# 04
 Edit the component menu as you like
# 05
137
# 06
Editing Technology
 Edit the component menu as you like
 Save this menu into the library
138
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# 07
 Skeleton of components are ready to use
 These are newly generated resistors
 Save this library
139
 Reload the library “mocmos-plus.jelib” then convert it to technology
Editing Technology
# 08
 Generate an XML file for permanent use of this technology
# 09
140
 Add the newly generated technology file in XML format to the Project
Settings so that the technology is automatically loaded and created at the
invocation of the tool.
Editing Technology
# 10
 Specify the XML file you created
141
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142
01. Creating a 10-kΩ resistor from N-well
Editing Technology
 Let’s create a new library “MyCircuit00” and “10K_N_Well” cell for {schematic}
# 01
143
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 Edit “10K_N_Well{sch}”
# 02
①
②
③
Choose “N-Well Resistor” from the schematic component menu.
Set “length” attribute to 120.0; “width” attribute to 12.0. That is, the aspect ratio
is 10:1, which yields about 10kΩ if the sheet resistance is about 1kΩ/□.
Export “L” and “R” port as shown.
144
 Let’s create a new “10K_N_Well{lay}” cell
Editing Technology
# 03
 Place a N-Well-Resistor-Node
# 04
145
 Change the length to 120.0 using the property editor
Editing Technology
# 05
146
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# 06
Gee!
“Width” and “Length” are interchanged!
Is this a bug of Electric? Or…
See the next slide for a fix.
147
 Graphically stretch the shape by using Ctrl-B then …
Editing Technology
# 07
n-well-res-1
n-well-res-2
 Both “Width” and “Length” are properly set.
 This shape will be the body of the resistor.
 Two ports are at both side ends.
148
 Add the two contact terminals at both the ends
Editing Technology
# 08
149
 Run NCC expecting an obvious error
Editing Technology
# 09
150
 Connect a contact and a port of the resistor body by an “N-Well-Resistor Arc”
Editing Technology
# 10
 Adjust the position of the contact so that the inside edge of the contact cut coincides with the
outside edge of the resistor body
# 11
151
 Export the two terminals as “L” and “R” respectively and name the node
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# 12
node name
152
 Confirm existence of expected objects
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# 13
153
 Rerun NCC to confirm consistency.
Editing Technology
# 14
 Check the 3-D view
# 15
154
02. SPICE simulation using the N-Well10-kΩ resistor
Editing Technology
 Let create a new cell for SPICE simulation
# 01
 Voltage divider is simulated.
155
 Write a SPICE deck file
Editing Technology
# 02
156
 Run the SPICE simulation with the schematic
Editing Technology
# 03
157
 Edit the layout and run NCC
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# 04
158
 Write a SPICE deck file
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# 05
159
 Run the SPICE simulation with the layout
Editing Technology
# 06
 Obviously, subcircuit information is missing!
 Finer tuning is necessary!
The main theme of Part-III.
Web search for “rnwod” results some SPICE model files for H-SPICE
for example, visit
http://ecow.engr.wisc.edu/cgi-bin/get/ece/541/lal/mm0355v.l
160
Editing Technology
03. Creating a 2-kΩ resistor from Polysilicon-2 high-resistor
 Let’s create a “2K_Poly2” cell for {schematic}
# 01
161
Editing Technology
 Edit “2K_Poly2{sch}”
# 02
①
②
③
Choose “N-Poly Resistor” from the schematic component menu.
Set “length” attribute to 55.0; “width” attribute to 5.0. That is, the aspect ratio is
11:1, which yields about 2kΩ if the sheet resistance is about 180Ω/□.
Export “L” and “R” port as shown.
162
 Let’s create a new “2K_Poly2{lay}” cell
Editing Technology
# 03
 Place a Polysilicon-2-HighResistor-Node
# 04
163
 Change the length to 50.0 using the property editor
Editing Technology
# 05
164
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# 06
Gee!
“Width” and “Length” are interchanged again!
Is this a bug of Electric? Or…
See the next slide for a fix.
165
 Graphically stretch the shape by using Ctrl-B then …
Editing Technology
# 07
poly-2-hres-1
poly-2-hres-2
 Both “Width” and “Length” are properly set.
 This shape will be the body of the resistor.
 Two ports are at both side ends.
166
 Add the two contact terminals at both the ends
Editing Technology
# 08
167
 Run NCC expecting an obvious error
Editing Technology
# 09
168
 Connect a contact and a port of the resistor body by an “Polysilicon-2-Resistor Arc”
Editing Technology
# 10
 Adjust the position of the contact so that the inside edge of the contact pad (Poly2) coincides
with the outside edge of the resistor body
# 11
169
 Export the two terminals as “L” and “R” respectively and name the node
Editing Technology
# 12
node name
170
 Confirm existence of expected objects
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# 13
171
 Rerun NCC to confirm consistency.
Editing Technology
# 14
 Check the 3-D view
# 15
172
04. SPICE simulation using the Poly2 2-kΩ resistor
Editing Technology
 Let create a new cell for SPICE simulation
# 01
 Voltage divider is simulated.
173
 Write a SPICE deck file
Editing Technology
# 02
174
 Run the SPICE simulation with the schematic
Editing Technology
# 03
175
 Edit the layout and run NCC
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# 04
176
 Write a SPICE deck file
Editing Technology
# 05
177
 Run the SPICE simulation with the layout
Editing Technology
# 06
 Obviously, subcircuit information is missing!
 Finer tuning is necessary!
The main theme of Part-III.
Web search for “rnpo1rpo” results some SPICE model files for H-SPICE
for example, visit
http://www.ax-09.ru/gruppa/materials/biblioteka/Shemotehnika/Chung-Yu%20Wu_Analog%20Integrated%20Circuits%20-%20II/025.l.txt
178
th, 2009
Technology
05. Modify technology for {lay} Added this section on May 11Editing
 When creating a new layout cell, I should have selected “mocmos-plus” technology but
selected “mocmos” instead
# 01
 Then, whenever I select a {lay} cell, “Components”
menu alters to “mocmos”
 Because of this mistake, some exceptions were
thrown when ran DRC, which led to the motivation to
prepare the reference [1]. In fact, I noticed this mistake
while running Electric under the Eclipse debugger.
179
 Modify the technology of each {lay} cell
Editing Technology
# 02
180
 Confirm that the technology has been set normally
Editing Technology
# 03
181
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182
01. Editing layer cells for N-well resistor
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 Let’s assume these parasitic values
# 01
183
02. Editing a pure node for N-well resistor
Editing Technology
9.4.4
 Let’s add a SPICE template; more specifically for LT-Spice
# 01
①
②
③
④
⑤
⑥
This resistor is to be modeled by a subcircuit in SPICE where URC (Uniform RC-line) will be
used as a base element.
The subcircuit instance name will be “X followed by the node name.”
The subcircuit has three terminals. Two of them will be connected to the ports attached to this
node. The last one is always connected to “node number 0” which is GND.
The subcircuit will take two parameters, that is, “L” and “W” which further accesses the
physical size of this node by substituting $(length) and $(width). Such substitution is
Electric’s job while generating a SPICE deck.
“LAMBDA” is a physical scale (like 500nm) that is to be given by a .param command in a
SPICE deck.
A pair of curly braces { } is required to evaluate a parameter expression in LT-Spice
modeled as URC
n-well-res-2
n-well-res-1
0; GND
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 How they are translated into a SPICE deck
# 02
exported port name “L”
is connected to $(n-well-res-1)
by an arc
$(node_name)=
$(length)=120.0
Editing Technology
$(width)=12.0
exported port name “R”
is connected to $(n-well-res-2)
by an arc
the subcircuit has to
be defined somewhere
(e.g. in a library)
185
 A sample subcircuit definition
Editing Technology
# 03
Refer to LT-Spice manual
for more details.
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03. Simulation with the modified technology
Editing Technology
 Modify the SPICE statements for a transient analysis at different temperatures
# 01
187
 Write a SPICE deck file
Editing Technology
# 02
188
 Run the SPICE simulation with the layout
Editing Technology
# 03
For high frequency, this is rather an LFP than a voltage divider
189
 Manually modify the SPICE deck for a step response
Editing Technology
# 04
190
 Rerun the SPICE simulation for a step response
Editing Technology
# 05
Ramp-up takes some time
191
 Let’s reduce the capacitance to 1/10 then…
Editing Technology
# 06
192
 Rerun the same simulation as #03
Editing Technology
# 07
Improved a bit, but …
193
 Let’s reduce both the capacitance and the sheet resistance to 1/10 then…
Editing Technology
# 08
194
 Rerun the same simulation as #03
Editing Technology
# 09
Now, this can be seen as a voltage divider for this freq.
195
04. Editing a pure node for Polysilicon-2 high-resistor
Editing Technology
9.4.4
 Let’s add a SPICE template; more specifically for LT-Spice
# 01
①
②
③
④
⑤
⑥
This resistor is to be modeled by a subcircuit in SPICE where URC (Uniform RC-line) will be
used as a base element.
The subcircuit instance name will be “X followed by the node name.”
The subcircuit has three terminals. Two of them will be connected to the ports attached to this
node. The last one is always connected to “node number 0” which is GND.
The subcircuit will take two parameters, that is, “L” and “W” which further accesses the
physical size of this node by substituting $(length) and $(width). Such substitution is
Electric’s job while generating a SPICE deck.
“LAMBDA” is a physical scale (like 500nm) that is to be given by a .param command in a
SPICE deck.
A pair of curly braces { } is required to evaluate a parameter expression in LT-Spice
modeled as URC
poly-2-hres-2
poly-2-hres-1
0; GND
196
Editing Technology
 How they are translated into a SPICE deck
# 02
$(node_name)=
exported port name “L”
is connected to $(poly-2-hres-1)
by an arc
$(width)=5.0
$(length)=55.0
exported port name “R”
is connected to $(poly-2-hres-2)
by an arc
the subcircuit has to
be defined somewhere
(e.g. in a library)
197
 A sample subcircuit definition
Editing Technology
# 03
Refer to LT-Spice manual
for more details.
198
05. Simulation with the modified technology
Editing Technology
 Modify the SPICE statements for a transient analysis at different temperatures
# 01
199
 Write a SPICE deck file
Editing Technology
# 02
200
 Run the SPICE simulation with the layout
Editing Technology
# 03
Response is much faster than N-well resistor divider
201
 Manually modify the SPICE deck for a step response
Editing Technology
# 04
202
 Rerun the SPICE simulation for a step response
Editing Technology
# 05
Ramp-up is also much faster than N-well resistor
203
 Let’s reduce the capacitance to 1/10 then…
Editing Technology
# 06
204
 Rerun the same simulation as #03
Editing Technology
# 07
Almost perfect!
205
06. Works done so far
Editing Technology
As of March 28, 2009, I reached here.
206
Editing Technology
207
01. Preparing the source files
Editing Technology
8.7
 Clearly understand the steps to be followed for editing the design rules
# 01
As this technology has been derived from mocmos, we have to refer to the original
technology file describing the same, which resides in the source code JAR file.
mocmos-plus.jelib
✔➀ graphically edit
✔➁ convert
mocmos-plus.xml
➂ copy relevant lines
➃ manually edit to finish
mocmos.xml
(the full-set description of mocmos
technology existing in the source code)
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 Get the source code
Editing Technology
# 02
This jar file contains the source codes; not “Binary”
 Unpack the archive file using “jar” command available in JDK (for example)
# 03
 Files and holders shown below will be extracted
# 04
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 The original XML file is here
Editing Technology
# 05
 Copy this file as mocmos-source.xml to the currently working directory and set on R/O flag
 Copy mocmos-plus.xml as mocmos-plus-work.xml
 Copy mocmos-plus.xml as mocmos-plus-org.xml and set on R/O flag
# 06
“r” for safety
I’m going to edit this file.
 I’m going to rename/restore these files while testing.
210
02. Comparing the two XML files
Editing Technology
 Using an appropriate tool, examine the differences one by one
# 01
The source (reference) XML file
The XML file being edited
211
 Find major differences in mocmos-source.xml and attempt to interpret them
Editing Technology
# 02






Some keywords are self-explanatory like ruleName, layerName, and value.
layerNames (plural) followed by curly braces { } may make combination of layers.
type may specify different type of design rules but its value like UCONSPA is not
easy to guess what it means.
when may specify when the rule is applied to but its value like SC is not very clear.
the vertical bar | may mean logical OR.
If you search the Electric manual for UCONSPA, you will find none. On the other
hand, you will find plenty of candidate sections for SC.
212
03. Hacking the source code
Editing Technology
 Let’s hack the source code
# 01
Going to search all the *.java files (including subdirectories) for UCONSPA
This tool is
@ http://www.ghisler.com/
213
 Found 9 suspicious files
Editing Technology
# 02
Examine these files one by one with a text editor then …
214
 Tips: Using Eclipse software development environment
Editing Technology
# 03
If you have the Eclipse software
development environment as explained
in the reference [1], you can also use its
File Search function as shown here.
This tool is very smart and useful!
215
 Bingo! DRCTemplate.java declares enumeration types as DRCRuleType
Editing Technology
# 04
216
 Similarly DRCTemplate.java declares enumeration types as DRCMode
Editing Technology
# 05
217
 The meaning of type in the DRC table
# 06
Keyword / Enumeration type
Editing Technology
Meanings
NONE
nothing chosen
MINWID
a minimum-width rule
MINWIDCOND
a conditional minimum-width rule
NODSIZ
a node size rule
SURROUND
a general surround rule
SPACING
a spacing rule
SPACINGE
an edge spacing rule
CONSPA
a connected spacing rule
UCONSPA
an unconnected spacing rule
UCONSPA2D
a spacing rule for 2D cuts
CUTSURX
X contact cut surround rule
CUTSURY
Y contact cut surround rule
ASURROUND
arc surround rule
MINAREA
minimum area rule
MINENCLOSEDAREA
enclosed area rule
EXTENSION
extension rule
FORBIDDEN
forbidden rule
EXTENSIONGATE
extension gate rule
SLOTSIZE
slot size rule
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 The meaning of when in the DRC table
# 07
Keyword / Enumeration type
Editing Technology
Meanings
NONE
None
ALL
always
M23
only applies if there are 2-3 metal layers in process
M2
only applies if there are 2 metal layers in process
M3
only applies if there are 3 metal layers in process
M456
only applies if there are 4-6 metal layers in process
M4
only applies if there are 4 metal layers in process
M56
only applies if there are 5-6 metal layers in process
M5
only applies if there are 5 metal layers in process
M6
only applies if there are 6 metal layers in process
M7 / M8 / M9 / M10 / M11 / M12
only applies if there are 7 / 8 / 9 / 10 / 11 / 12 metal layers
in process, respectively
AN
only applies if analog (npn-transistor) rules are in effect
AC
only applies if alternate contact rules are in effect
NAC
only applies if alternate contact rules are not in effect
SV
only applies if stacked vias are allowed
NSV
only applies if stacked vias are not allowed
DE
only applies if deep rules are in effect
SU
only applies if submicron rules are in effect
SC
only applies if scmos rules are in effect
219
04. Interpretation of the DRC descriptions
Editing Technology
 Let’s compare each line with the MOSIS rules
# 01
http://www.mosis.com/Technical/Designrules/scmos/scmos-well.html
220
 More precisely …
Editing Technology
# 02
①
②
③
The minimum width for P-Well layer is defined in Rule 1.1.
The rule type is abbreviated as MINWID.
when DEep or SUbmicron rules are in effect, the Lambda value should be 12.0.
221
 Furthermore …
Editing Technology
# 03
①
②
③
The minimum width for P-Well layer is defined in Rule 1.1.
The rule type is abbreviated as MINWID.
when SCMOS rules are in effect, the Lambda value should be 10.0.
222
05. Writing our own DRC descriptions
Editing Technology
 It is right time to start writing our own DRC descriptions in mocmos-plus.xml
Good luck!
As of May 11, 2009, I reached here.
223
Editing Technology
224
01. Writing our own DRC descriptions
Editing Technology
 Write well-commented XML file for better understanding
# 01


After a few trials, I noticed that incrementally testing these rules using Export DRC Deck
and Import DRC Deck is a right way instead of restarting Electric again and again after
editing XML files for “Added Technologies.”
In other words, a DRC deck can be dynamically replaced while keeping Electric active.
225
02. Exporting the design rules
Editing Technology
 My own DRC descriptions in mocmos-plus.xml will be loaded once at invocation of Electric
 To enable dynamically change the rules without restarting Electric, export a DRC deck
# 01
Let’s export as “testDRC.xml”
226
 Open the XML file to check whether rules are described as intended
Editing Technology
# 02
In “mocmos-plus.xml” file, I have named the customized rule as MOSISP (call capital)
for easy eye catch.
227
03. Checking the MINWID rule
Editing Technology
 Run DRC for 10K_N_Well{lay} view
# 01
12.0
228
 Change the value to constitute a minimum width violation
Editing Technology
# 02
 Import the modified DRC Deck
# 03
229
 Rerun DRC for 10K_N_Well{lay} view
Editing Technology
# 04
12.0
230
 Examine each error
Editing Technology
# 05
Looks reasonable
231
 Restore the initial value for further testing
Editing Technology
# 06
 Confirm that there is no violation
# 07
232
04. Checking the CONSPA rule
Editing Technology
 Create a new DRC_N_Well{lay} cell
# 01
 Place two instances of 10K resistor too close to each other
# 02
4.0
233
 Run DRC
Editing Technology
# 03
234
 Examine each error
Editing Technology
# 04
Looks reasonable
235
 Move the top object by dY= +2.0 and rerun DRC
Editing Technology
# 05
6.0
236
05. Checking the SPACING rules
Editing Technology
 Place a pure P-Well object and change its size interactively
# 01
7.0
pure P-Well
237
 Run DRC
Editing Technology
# 02
238
 Examine each error
# 03
Editing Technology
pure P-Well
Looks reasonable
239
 Move the P-Well object by dY= +3.0 and rerun DRC
Editing Technology
# 04
10.0
pure P-Well
240
 Place a pure N-Well object and change its size interactively
Editing Technology
# 05
pure P-Well
5.0
pure N-Well
241
 Run DRC
Editing Technology
# 06
242
 Examine each error
# 07
Editing Technology
pure P-Well
pure N-Well
Looks reasonable
243
 Move the N-Well object by dY= -5.0 and rerun DRC
Editing Technology
# 08
10.0
pure N-Well
244
 Summary
Editing Technology
① Studied a flow to incorporate a new user-defined
technology to Electric including:
a. Adding new TECHNOLOGY LAYERS
b. Adding new TECHNOLOGY ARCS
c. Adding new TECHNOLOGY NODES
d. Writing SPICE Template to work with LT-Spice
② Studied how to manually edit an XML file for user-defined
DRC.
245
 To Do
Editing Technology
① More design rules have to be added and tested against
different test cases.
② More realistic physical parameters are required to
improve usefulness.
③ And many more whatever insufficient!
[The End of File]
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