Transcript ppt - Belle II

PXD Summary
Hans-Günther
Moser
MPI für Physik
Other talks in software, SVD and DAQ sessions
SuperKEKB
3nd open meeting,
July 7-9. 2009
SOI Detectors
Yasuo Arai
Hans-Günther
Moser
MPI für Physik
*1st MPW: submission on 7th Aug. 2009
*2nd MPW: submission on end. Oct. 2010
*3rd MPW: submission on beg. Jan. 2010
We have received several contacts from foreign labs ;
India, UK, Spain, USA, Poland ...
This possibility has been announced by the facilitation group for
monolithic and vertically integrated pixel detectors (Marcel Demarteau,
Junji Haba, Hans-Günther Moser and Valerio Re).
Thus collaborations for R&D should be initiated pushing progress for
such detectors
SuperKEKB
3nd open meeting,
July 7-9. 2009
SOI R&D at KEK
Hans-Günther
Moser
MPI für Physik
Laser test of SBPIX1
48x48 pixels of
50x50µm²
New: buried p-well to reduce back gate effect:
B (~1E12 cm-2)
Without BPW
Vback Up
SuperKEKB
3nd open meeting,
July 7-9. 2009
BPW
With BPW
DEPFET: Ringberg Workshop
Hans-Günther
Moser
MPI für Physik
SuperKEKB
3nd open meeting,
July 7-9. 2009
http://indico.mppmu.mpg.de/indico/conferenceDisplay.py?confId=466
DEPFET-Collab. @ Belle-II
Original Collaboration: DEPFET pixel detector @ ILC (since 2002)
now: Unite efforts to deliver a REAL PXD by 2013 for Belle-II
Hans-Günther
Moser
MPI für Physik
SuperKEKB
3nd open meeting,
July 7-9. 2009
University of Barcelona, Spain
University Ramon Llull, Barcelona, Spain
Bonn University, Germany
Heidelberg University, Germany
Giessen University, Germany
Göttingen University, Germany
Karlsruhe University, Germany
IFJ PAN, Krakow, Poland
MPI Munich, Germany
Charles University, Prague, Czech Republic
IGFAE, Santiago de Compostela University, Spain
IFIC, CSIC-UVEG, Valencia, Spain
with important help from Hawaii, KEK, Vienna
DEPFET@Belle-II
New management:
IB- Board
Project Leader
C. Kiesling
Technical Coord.
H.-G. Moser
„Integration Coord.“
(Liaison @ KEK)
Funding
Hans-Günther
Moser
MPI für Physik
SuperKEKB
3nd open meeting,
July 7-9. 2009
Schedule
Hans-Günther
Moser
MPI für Physik
SuperKEKB
3nd open meeting,
July 7-9. 2009
Sensor Production Status
Status at 2nd Belle II meeting (March): SOI wafer bonding at Tracit, France
Hans-Günther
Moser
MPI für Physik
SuperKEKB
3nd open meeting,
July 7-9. 2009
30 SOI wafers received, processing in our own lab has started
Presently: cleaning, oxygenation, alignment mask, first implantation: next
week. Processed are 6 wafers + dummies
Wafer layout
Hans-Günther
Moser
MPI für Physik
Small test matrices
with various pixel
sizes;
50 µm x 50 µm
..
50 µm x 175 µm
Technology
variations
(gate length L)
4 ½ module large
matrices with most
likely pixel sizes
5cm: 50µm x 75µm
5cm: 50µm x 100µm
3.5cm 50µm x 50µm
3.5cm 50µm x 75µm
SuperKEKB
3nd open meeting,
July 7-9. 2009
Important for timing!
DEPFET Readout and Control ASICs
15mm
Hans-Günther
Moser
MPI für Physik
50µm
~75µm
clear[n+1]
gate[n+1]
98 mm
132 mm
clear[n]
gate[n]
drain lines
Switcher chips (line driver)
cross section
(height not to scale)
thinned active pixel area
DCD chips (analog)
DHP chips (digital)
SuperKEKB
3nd open meeting,
July 7-9. 2009
DCD, Switcher: Heidelberg
DHP: Bonn, Barcelona
flex cable
DCD Tests
Hans-Günther
Moser
MPI für Physik
Manuel Koch, Bonn
SuperKEKB
3nd open meeting,
July 7-9. 2009
Works almost at design frequency (540 MHz: 88ns line rate)
(works still at nominal 600 MHz, but with higher noise)
Noise level: 90nA with 450 pA/e: 200 e ENC (S/N = 20:1)
Some bugs discovered, improved version will be submitted
Push DEPFET gain (600 pA/e ?)
Summary: ASICs
»- DCD prototype chip has been tested with test signals that correspond to DEPFET
currents and irradiated up to 7 Mrad.
» The chip works fine and has high enough conversion speed.
Hans-Günther
Moser
MPI für Physik
» Operation with matrices still to be tested – we do not expect problems.
» Only „fine tuning“ of the design for the super KEKB operation is necessary.
»- Switcher prototype with LV transistors has been tested and irradiated up to 22 MRad.
» The chip works fine and has adequate speed for Belle II operation.
»- Another prototype with HV transistors has been designed and tested.
»- The irradiation of the chip still has to be done but the basic and most critical part (highvoltage NMOS) has been irradiated up to 600 KRad and no damage has been observed.
»- DHP chip will be designed using digital design tools in intrinsically radiation hard 90 nm
technology.
»- Choice between 4 different bumping technologies – advantages and disadvantages still to
be evaluated
»Planned submissions:
SuperKEKB
3nd open meeting,
July 7-9. 2009
•
Switcher:
October 09
•
DCD:
September 09
•
DHP:
October 09
Consequences of nano beam
Less background? Always welcome, but to be confirmed
Smaller beam pipe: 1.5cm -> 1.0cm
Hans-Günther
Moser
MPI für Physik
1cm beam pipe allows:
1st layer closer to the beam => better resolution
Smaller modules with smaller pitch (in z) => better resolution
Smaller modules: better use of wafer size:
higher yield
less wafers needed?
more space for electronics and cooling
More freedom to choose layer spacing
optimize resolution
improve mechanical layout
(symmetric arrangement?)
(more room for cooling/services?)
SuperKEKB
3nd open meeting,
July 7-9. 2009
Major work needed to find optimum!
Need final geometry of IR (and beam pipe outer radius) soon!
Mechanics
Frank Simon:
Hans-Günther
Moser
MPI für Physik
SuperKEKB
3nd open meeting,
July 7-9. 2009
Mechanics
Hans-Günther
Moser
MPI für Physik
New simpler concept for support
More space for services and air flow
Integrated cooling channels
Sliding module mount (termal expansion)
SuperKEKB
3nd open meeting,
July 7-9. 2009
Cooling
Thomas Müller (work done in Karlsruhe and Valencia)
Hans-Günther
Moser
MPI für Physik
• DCDs always active:
hottest points
• 2 Switchers active
• 2 pixel stripes active
The
Power: ca 7W per module half
6 W: ASIC on end
1 W: sensor area
Total ~ 300 W
Needs both liquid and air cooling
We need to cool
down the DCD
Highly thermally conductive materials
needed to get heat out of module
Under study:
TPG (thermally pyrolythic graphite)
CVD diamond
SuperKEKB
3nd open meeting,
July 7-9. 2009
Work started, tooling to be set up (simulation, mock ups)
Simulations
Kolja Prothman (work done in Munich and Prague)
Important tool for parameter optimisation (pitch, layer radius, pixel arrangments
Hans-Günther
Moser
MPI für Physik
Simulated is PXD
with active and
passive material
SVD
and CDC
Some examples
SuperKEKB
3nd open meeting,
July 7-9. 2009
Simulations
Hans-Günther
Moser
MPI für Physik
Variable pitch and bricking not usefull
Smaller pitch with longer readout time
improves IP(z) resolution considerably
Performance better than Belle SVD
Most work done assuming 1.5 cm IR
SuperKEKB
3nd open meeting,
July 7-9. 2009
Work on nano beam geometry started
=> should be even better
Test Beam
Zdenek Dolezal for test beam group
Depfet2: ME, CCG,
PXD5, S90K02,
0.032x0.024mm
Hans-Günther
Moser
MPI für Physik
Depfet6: ME, CCG,
PXD5,S90I03,
0.024x0.024mm
SC0: 25x25x4mm
SC1: 4x4x4mm
Beam
Position
-125
0
[mm]:
Position: 0
Depfet14: ME, CCG,
PXD5, 90K02,
0.032x0.024mm
79
1
213
408
2
3
Depfet11: ME, SIMC,
PXD5, S90K00,
0.032x0.024mm
6 plane telescope (incl. DUT)
IL-like pixels (24 µm pitch)
Thick silicon (450 µm)
‘old’ readout & control ASICs
Learn a lot about DEPFET operation
Tuning of operation parameters
X-check and tuning of simulation
Next test beam end of July
Belle II type test beam in 2010
SuperKEKB
3nd open meeting,
July 7-9. 2009
Depfet5: ME, CCG,
PXD5, 14B, S90I00,
0.032x0.024mm
4
551 631
5
722
Depfet7: ME, CCG,
PXD5, 90I00,
0.032x0.024mm
Technical choices
Hans-Günther
Moser
MPI für Physik
Important: need to fix geometry: radius, module length, thickness
latest possibility: September 2010 (prepare SOI material)
Details on pitch can wait till March 2011
Driven by sensor production schedule
SuperKEKB
3nd open meeting,
July 7-9. 2009
However, engineering of support and cooling including prototyping
should start soon: need to fix parameters this year!
Parameter choices
Hans-Günther
Moser
MPI für Physik
Options like bricked pixels of variable pitch were abandoned in
Ringberg
(However: variable pitch may come back due to 1cm beam pipe?)
Major decision to take: 10µs or 20µs frame readout time?
longer readout time allows smaller pixel, better resolution
slightly higher (but still tolerable) occupancy
higher readout bandwidth needed
20µs favoured in Ringberg
have to study again for nano-beam
Some ideas to improve DCD readout speed (no DCS): not baseline
SuperKEKB
3nd open meeting,
July 7-9. 2009
Important: Redundancy:
Choose parameters (speed, pitch etc) not at the limit of the
technology! Give some headroom in case some specs are
not reached: e.g. DT(line readout) x N(lines) < 10µs
(e.g. use abort gap as ‘buffer’)