Transcript MOS-AK abstract

EKV3 design kit for
110nm RF-CMOS
Sadayuki Yoshitomi
Toshiba Corporation Semiconductor Company
 Demonstration of EKV3.0’s modeling capability for
RF-CMOS circuit design.
 Adaptation case of TOSHIBA’s 110nm RF-CMOS technology
 Modeling accuracy
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DC input-output characteristics
Gate capacitance at 1MHz
S-parameter at various bias points
Scalability of S-parameters
Load-Pull measurements
 EKV3.0 implementation
 ADS design kit example
22th Sept. 2006
MOS-AK Meeting
TOSHIBA Corp. Semiconductor Company
1
EKV3.0 design Kit
DC and CV
Measured
Simulated
fT-VGS
Platform : Agilent’s ADS
N-MOSFET
Gate length=0.11um, Finger length=5um
Numbers of fingers=10
LoadPull
S-Parameter
24
22
18
Pout
Gain [dB]
20
16
14
12
10
-40
-35
-30
-25
-20
-15
-10
-5
indep(Pdel_contours_p) (0.000 to 60.000)
IndexPoutdBm (1.000 to 234.000)
Input Power [dBm]
22th Sept. 2006
MOS-AK Meeting
TOSHIBA Corp. Semiconductor Company
2
Summary
 EKV3.0 design kit has been demonstrated
 61 out of 120 model parameter has bee changed
from the default values.
 EKV3.0 gives good prediction of MOSFETs’
 DC and C-V and scaleability (VTH vs. L and W)
 Multi biased S-parameter and scalability.
 Operation under gain compression.
 Currently Agilent’s ADS is available. Implementation
into other tools are being planned.
22th Sept. 2006
MOS-AK Meeting
TOSHIBA Corp. Semiconductor Company
3