Transcript Slide 1
Trends in Simulation at Nano-scale
Industrial perspective for university research trends
Steven J. Hillenius
Executive Vice President
Semiconductor Research Corporation
Needs for semiconductor simulation
Managing complexity
Creating multilevel design tools
Determining the technology limits
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Example: Electronic Cell
Major functional blocks:
Sensing
Communication
Technology
Control
Convergence
Energy
~10 mm
S1
Energy
S2
Control
Constraints and Trade-offs:
Very limited space needs
to by divided between
sensors
power supply
electronic components
Layout:
3D microcircuits
Scaling Limits need
to be Understood
High Level needs for nano-scale devices
Integrated multilevel perspective:
From molecule to mesoscale nanostructures to microscale thin films and
components to circuit level simulations of integrated devices
From femto scale electronic transitions and nanoscale and microscale
molecular dynamics through macroscopic properties and behavior.
Complexity of materials modeling in nanotechnology is
increasing, due to increasing complexity from a variety of
factors, which include:
Combinatorial System: Number of materials has continued to increase with
each technology.
Size: Most of the devices have dimensions close to material domain sizes
(e.g. grain size, thin film thickness).
Topography: Non-planar material structures modulate properties and
behavior, due to different materials at multiple interfaces.
Topology of the nanostructures and molecules.
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Nanoscale simulation topics of importance to the
Semiconductor Industry
Process-related:
Interface of high-K dielectric on difference channel materials (III-V,
CNT, graphene, Ge… as function of surface orientation, termination…)
Ultra-rapid thermal annealing (activation and diffusion in micro-s time
frame)
Contact morphology
Strain in 3-D nanostructures
Defect formation due to strain
Process variability (line-width roughness, doping fluctuation, thermal
fluctuation…)
Self-assembly
Synthesis to structure & composition, especially for the interfaces and
multi-interface material structures.
Probe interactions with samples to enhance quantification of structure,
composition, and critical properties.
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Nanoscale simulation topics of importance to the
Semiconductor Industry
Device-related:
Band structures in various III-V compounds
Band structures in 3-D structures (FinFET, CNT, graphene nanoribbon…)
Ballistic transport
Dissipative quantum transport
Transport through contact
Strain-enhanced transport
Device output variability (due to process variability)
Reliability (High-K interface, hot-carrier, TDDB, NBTI, …)
Analog performance (1/f noise, RTN…)
Parasitics and cross-talk
Modeling of novel memories (MRAM, PCRAM, ferroelectric, nanocrystals…)
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Nanoscale simulation topics of importance to the
Semiconductor Industry
Circuit-related:
Compact modeling interface
Predictive modeling for design of complex SoCs on advanced
processes.
Reliability simulation (NBTI, TDDB, HCI, RTN) that were not as
evident in older processes..
Higher frequency design (GHz to THz)
Robust design elements
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