Transcript amicsa 2010 - ESA Microelectronics Section

Texas Instruments
Radiation Effects, and Solutions
for
Space, & HiRel Applications
James F. Salzman
Distinguished Member Technical Staff
Director of Technology, Radiation Effects
[email protected]
AMICSA 2010
Third International Workshop on Analogue and Mixed Signal Integrated Circuits for Space Applications
5-7 September 2010
Noordwijk, The Netherlands
Agenda
• TI HiRel Division Overview
• TI Fabrication Overview
– Freising Wafer Fab - BiCOM
• ELDRS & Mitigation
• The Need for Reliable Space Products
– Satellite Failures
– Product Up-Screening issues
• Understanding Reliability for Space Products
– Bathtub Reliability Curve
– Extrinsic & Intrinix mechanisms
•
Space Product Examples
• Summary
James F. Salzman
AMICSA 2010
Overview of TI HiRel Division
Commitment
• 30+ years of experience working with HiRel customers
• Largest dedicated organization in the industry
• Worldwide sales and support infrastructure
Leading-edge technology and manufacturing
• HiRel approved fabs (certified by Defense &
Aerospace standards)
• Access to latest process technologies (HPA07, BiCom, etc.)
• Broad packaging capabilities
As short as
9 months
As long as
30 years
Consumer
Life Cycle
HiRel Products Life
Cycle
Intro
Growth
Maturity
Decline
Phase
Out
Extended product life cycles
• Obsolescence mitigation
• Supply beyond commercial availability
• Product resurrection
Product
Longevity
Assured
Market expertise
• Baseline control and qualification per unique
market requirements: TID, SEU, high-temp,
ceramic, QML –Q/V, EP, die solutions, etc.
James F. Salzman
AMICSA 2010
Advanced, Reliable, Worldwide Production Supply
TI Sherman SFAB
MIHO 5 & 6
• 200mm wafers
• CMOS & BiCMOS
• Military HiRel
• Sherman, Texas
• 200mm wafers
• CMOS
• Miho, Japan
DMOS 4
ANAM
• 200mm wafers
• CMOS
• Buchon, Korea
• 200mm wafers
• CMOS
• Dallas, Texas
• 250, 180 & 130nm
DMOS 5
• 200mm wafers
• CMOS & BiCMOS
• Dallas, Texas
• 180, 130 nm
FFAB
• 200mm wafers
• CMOS and BiCMOS
• Freising, Germany
DMOS 6
TI Stafford, Houston
• 200mm wafers
• CMOS
• DSP Headquarters
• Houston, Texas
James F. Salzman
RFAB
• 300mm wafers
Advanced CMOS
• Dallas, Texas
• 90, 65 & 45nm
• 300mm wafers
Advanced BiCMOS
• Dallas, Texas
• 2.25X vs. 200mm
AMICSA 2010
Hi-Rel COT Wafer Foundry Model
Multiple Entry and Exit points for Customers
Over 50 process flows available for COT Engagements
James F. Salzman
AMICSA 2010
City of Freising
Year of foundation: 996 A.D.
Oldest brewery in the world
Approximately 47,000 inhabitants
Texas Instruments Deutschland
Established in Germany: 1961
Start of Wafer Fab: 1976
ISO 9001 / TS 16949 / ISO 14001/EMAS / OHSAS 18001 certified
Major regional employer ~ 700 Employees
450,000 W/year
45% SiGe ( BiCOM )
James F. Salzman
AMICSA 2010
BiCOM-3XX Technology Overview
High-Speed & Performance
•
•
Technology Features:
•
Complementary SiGe BiCMOS
0.35 & 0.18um Class
SiGe on SOI
Triple Metal
5V & 3.3V CMOS
Isolated CMOS
5V SiGe NPN
5V SiGe PNP
TFR: NiCrAl 50 Ω/sq
C: 0.7 fF/um2 MIM
R: Poly 290 Ω/sq
Bipolar 3X Performance:
NPN PNP
HFE
200
VA
150
100
BVCEO
7.0
6.0
fT
25
25
•
•
•
•
•
•
•
•
•
•
•
James F. Salzman
•
•
200mm Wafers
Status: In Production
Process Extensions:
• 3X: 25 GHz
• 3XL: 50 GHz
• 3XHV: 36V
•
•
•
•
Latch up Free
TID > 150K Rad(si)
ELDRS Free
Easy Photo Compensation
100
AMICSA 2010
ELDRS Effects in Bipolar
Emitter
SiO2
+ + +
Base
Collector
+ + +
Total dose radiation causes charge yield in SiO2, and allows interface trap
generation under low dose rate conditions. Effect is same as base emitter
leakage causing a drop in transistor Gain. i.e. more base current is
needed for same collector current. Typically lateral PNP gains are low to
begin with, and will drop rapidly under low dose rate.
SiGe uses a totally different type of structure with no base oxide, thus no
hole trapping at high or low doses.
James F. Salzman
AMICSA 2010
ELDRS: Interface Trap Yield – Hfe reduction
Under high dose rate there is a high
generation of electron-hole pairs
(charge yield). The holes are forced to
the interface by positive gate voltage,
while the electrons are swept away into
the gate. The buildup of holes at the
interface form a positive charge barrier
and repel the generated protons
(hydrogen), keeping them from the
interface and forming interface states.
They typically will recombine.
Under lose dose rates there is low
generation of electron-hole pairs. The
holes are forced to the interface by
positive gate voltage, while the
electrons are swept away, in the same
way under high dose rate, but the
trapped hold buildup is much lower.
The repelling force of the trapped
holes is low enough to allow the
generated protons (hydrogen) to
migrate to the interface forming
interface states.
James F. Salzman
AMICSA 2010
Enhanced Low Dose Rate Sensitivity
PNP HFE Dose Rate Effects
90
80
70
60
Lateral
PNP
Transistor
HFE
50
40
30
50 Rads/sec
20
10 mRads/sec
10
5
E-Test Limits
10
15
20
25
30
35
40
45
50
55
60
65
70
Total Irradiated Dose Krads (si)
Device Design Limits
James F. Salzman
AMICSA 2010
The Effects of Hydrogen in Analog IC Processing
1.5
Vit (V)
tox = 101 nm
Dose = 100 krad(SiO2)
DVit Increases With the Amount of Hydrogen used in Processing
1.0
Test transistors and circuits subjected to small amounts of hydrogen
trapped in hermetically sealed packages can significantly degrade the total
dose and dose rate response of bipolar linear microelectronics.
Increasing H
0.5
0.0
A
B
C
Process
After J. R. Schwank, et al.,
IEEE Trans. Nucl. Sci. 34, 1152 (1987)
Devices subject to 100% H2
Ronald L. Pease, IEEE Transactions on Nuclear Science, December 2004
NH4
Used in producing
Compressive Nitride Overcoat
Little Hydrogen present
in Passivation Process
8 Krad
35 Krad
60 Krad
Final Passivation (hydrogen injection) can greatly effect ELDRS performance in Bipolar Circuits
James F. Salzman
AMICSA 2010
Unitrode & Bipolar Product Improvement
•
Legacy Unitrode & Bipolar ELDRS performance from SFAB/MFAB ~ 8KRad
•
SFAB process adjustment made: Improved Reliability and Hardness
•
SFAB Bipolar process now passes 40KRAD @ 10mRad/sec(si) on following devices:
–
–
–
–
–
UC1825
UC1825A
UC1846
UC1843A
UC1525B
– UC1637W
– UC19432JG
Available Now !! –
See new Standard Microcircuit Drawing numbers below.
In Qualification
– SE555
– AM26LS33
In Qualification
Device Function
Package
Old SMD #
Old TI Part#
New SMD #
New TI Part#
UC1825
J (16-CDIP)
5962-8768101VEA
UC1825JQMLV
5962-8768104VEA
UC1825J-SP
FK (20-LCCC)
5962-8768101V2A
UC1825LQMLV
5962-8768104V2A
UC1825FK-SP
UC1825A
J (16-CDIP)
5962-8768102VEA
UC1825AJQMLV
5962-8768105VEA
UC1825AJ-SP
UC1525B
FK (20-LCCC)
5962-8951105V2A
UC1525BLQMLV
5962-8951106V2A
UC1525BFK-SP
UC1846
J (16-CDIP)
5962-8680601VEA
UC1846JQMLV
5962-8680603VEA
UC1846J-SP
FK (20-LCCC)
5962-8680601V2A
UC1846LQMLV
5962-8680603V2A
UC1846FK-SP
JG (8-CDIP)
5962-8670406VPA
UC1843AJQMLV
5962-8670409VPA
UC1843AJG-SP
UC1843A
More devices to follow in 2010 & Customers can always drive new releases
James F. Salzman
AMICSA 2010
Charge Collection in BiCOM
Space craft
particle penetration
NPN
Interpoly
Dielectric
SiGe Epi
Base
P+ Base Poly
Silicided Emitter Poly
L-Spacer
Deep Trench
Collector
Silicide
Base Silicide
Intrinsic Epi
SCI
Buried N+ Layer
+
++ +
+ +
+- +
-
N+
Charge
Track
BOX – Buried Oxide - ( Bonded Wafer Oxide ) – 0.4um
Charge
Collection
Volume
P - substrate
Heavy Ion
James F. Salzman
AMICSA 2010
Collaborative Relationships
Europe/Japan/Asia
• JAXA - Japan Aerospace
US Government
Liaisons
•
•
•
•
•
•
•
US Army
US Navy
US Air Force
NASA
DSCC
DMEA
GIDEP
•
Teaming
•
•
•
•
•
JC-13 Government Liaison – TI Chairman
JC-13.4 Rad Hard – TI Participation
•
•
•
•
Exploration Agency
ESA - European Space
Agency
CNES – French Space
Agency
DLR - Deutsches Zentrum für
Luft- und Raumfahrt e.V
BSNC - British National
Space Centre
DSO – Singapore Defense
Science Org
DOS/ISRO – India
Department of Space &
Research
JC-13.1 Discrete Devices
JC-13.2 Microelectronics
JC-13.4 Rad Hard - TI Active
JC-13.5 Hybrids, RF/Microwave, MCM
JC-14 Quality & Reliability – TI Active
James F. Salzman
AMICSA 2010
MIL-STD 883H Method 1019.8 Changes
Previous MIL-STD 883G, Method 1019.7
1 Hour Max Time
Co60
Radiation Facilities
Parts must be tested within one
Hour after Radiation Exposure
Portable Test Equipment
This means you either have radiation sources at your company close to your
testers, or you take a lot of test equipment to the Radiation Facilities. $$$$ !!!
Updated MIL-STD 883H, Method 1019.8
Co60
Radiation Facilities
Parts are
exposed to
Radiation
and placed
on Dry Ice
and shipped
to OEM
Styrofoam Top Lid
-37 C
Anti-Stat Styro Peanuts Fill
Barrier Foam Layer
Tray with DUTs
20 Lbs Dry Ice
DRY ICE
-60 to
-70 C
-78.5 C
Parts now
have up to
72 hours
before
testing
must occur.
( FedEx )
Styrofoam
Liner
TI Production
Test Equipment
Dry Ice prevents annealing
This means you can ship parts for radiation exposure, and have them
shipped back to your production test facilities for standard re-test….
James F. Salzman
AMICSA 2010
Newspaper Headlines
Sept 1, 2009 The Indian space agency has announced that it lost contact with its lunar orbiter
Chandrayaan-1 on Saturday last week. The mission, which has achieved most of its scientific objectives,
carried three European instruments. Radio contact with Chandrayaan-1 was lost at 22:00 CEST on 28
August
Aug 08, 2009 NASA’s Mars Reconnaissance Orbiter is in safe mode, a precautionary standby status,
and in communications with Earth after unexpectedly switching to its backup computer on Thurs. Aug. 6.
This is the fourth computer shutdown on the Mar’s Reconnaissance Orbiter this year
Mar 7, 2009 - The reason for the loss of the satellite, experts confirmed, was a failure of its electronic
components. And the so-called electronic-component base constituted the basis of this spacecraft. The
loss of the satellite reminded specialists of a two-year-old story. ... Low-quality components said to
be the cause of Russian satellite failure Mar 20, 2009 - ... ... the in-orbit satellite failure of the Coast Guard demonstration or the quick-launch
satellites, satellite launch and construction delays and cost overruns and in-orbit satellite failures or reduced
performance; the failure of our system or reductions in levels of service due to faulty components ...
Jan 15, 2009 - Engineers are trying to determine what happened to the telecommunications satellite
Astra 5A, which inexplicably failed on Jan. 15 after 12 years of operation. The satellite has since been
adrift in space, moving out of its geostationary position about 22,300 miles (35,888 km) above Earth and
is moving eastward along its orbital arc.
Satellite Grim Reaper
Satellite Failure Rate ~ 20/year
James F. Salzman
AMICSA 2010
KNOWN SEMICONDUCTOR FAILURE MECHANISMS
•
•
•
•
•
•
•
•
•
•
•
•
•
Electromigration (leads, contacts, vias)
Stress Migration (notching, voiding)
Dielectric Leakage / Time-Dependent Dielectric Breakdown
Antenna Charging
Mobile Ions (surface inversion)
Corrosion
Channel Hot Carriers (parametric degradation, NMOS, PMOS)
NBTI (Negative Bias Temperature Instability)
Gate Oxide Integrity (GOI) Time Dependent Dielectric Breakdown TDDB
Thermo-Mechanical Stresses (shear, tensile, fillers, etc.)
Bonding (intermetallic voiding, chip-outs)
Heat Dissipation (impact on failure rate)
Radiation Effects
James F. Salzman
AMICSA 2010
Typical Up Screening to QMLV flow by some Suppliers
Obtain die from
various sources
• Typically Fab less
• No process information
• Unknown design rules
• Unknown heritage
• Unknown future
• Unknown FIT Mechanisms
• NBTI
• TDDB
• CHC
• Metal Migration
• Etc.
James F. Salzman
Radiation Test &
Ceramic package
Up-Screening
as Required
Sell to end User
• Questionable Product
• Typical Lack of experience
• Out sourced to 3rd Party
• Lack of Ownership
• Limited product information
• May use several vendors
rd
• Limited Destructive Physical Analysis Size
• Relies on 3 party quality
• Lack of full time reliability Engineer
• Lack of process information
• Commercial die reliability ~ 10 years
• Lack of Wafer Level Reliability
• Lack of package Thermal Analysis
AMICSA 2010
The Reliability Bath Tub Curve
The “bathtub curve” is really the addition of two curves.
Failure
Rate
Extrinsic failures - caused by some type of processing or material defects
Time
Failure
Rate
Intrinsic failures - happen as a result of wearout
Time
James F. Salzman
AMICSA 2010
The Reliability Bath Tub Curve
No reliability discussion can be complete without mentioning the bathtub curve.
EFR Testing/Outlier
Product Quals
Wear out
Intrinsic Failures
Failure Rate
Infant Mortality
Extrinsic Failures
EFR
DPPM
Process Quals/WLR
FIT
Burn-in 24 hrs
DPPM to
Customer
Useful Lifetime
Random Failures
6 months – 1 year
10 years
Defects Parts Per Million TYPICAL TIME (log scale)
James F. Salzman
AMICSA 2010
A Closer Look at Intrinsic Failures
The total intrinsic failure curve is the sum of the failure rate of all
possible wearout mechanisms.
Failure Rate
Total
NBTI
Radiation
Channel Hot Carriers
Electromigration
Gate Oxide
TDDB
Small
Random
FIT’s
Useful Life
Time
Radiation is just one of many FIT mechanisms, and often is not the Major mechanism !!!
James F. Salzman
AMICSA 2010
James F. Salzman
AMICSA 2010
James F. Salzman
AMICSA 2010
•
•
 Point to Point Microwave
 Telecommunication Transceiver
 Direct Synthesis Modems
James F. Salzman
SDIO
SDO
SCLK
BIASJ
DB[13:0]N
DA[13:0]P
DA[13:0]N
Input
RCVR
x2
Input
Formatter
IOUTP
14-b DAC
IOUTN
DAREFP
DAREFN
AGND
AVDD
DLL
CLK_OUTN
•
•
•
RESETB
CLKP
÷2
CLKN
CLK_OUTP
TxENABLE
÷1
÷2
÷4
DVDD
•
•
•
•
•
EXTIO
EXTLO
DB[13:0]P
DGND
•
•
•
1.2 V
Reference
SIF
DLLLOCK
•
Selectable 2x Interpolation with Fs/2
mixing
LVDS and HypertransportTM voltage level
compatible
Even/Odd demultiplexed data
DDR output clock
DLL optimized clock timing synchronized
to toggling
input reference bit
On-chip termination resistors
3.3 V Analog Supply Operation
On-Chip 1.2V Reference
Differential Scalable Current Outputs: 2 to
20 mA
Power Dissipation: 1.5W @ max op
conditions
192-pin Ball Ceramic BGA
DLLRESET
•
Control
SDENB
– Dual differential input ports
– Maximum 1.2 GSPS each port
IO GND
14-bit resolution
2.4 GSPS maximum update rate DAC
IOVDD
•
•
MODE[7:0]
DAC5670 2.4GSPS 14bit
Passed 100Krad(Si) TID
No SEL @ 85Mev
QMLV Qualified and Released
AMICSA 2010
QML-V Data Converter Roadmap
DAC5675
ADS6445
14b 400 MHz
Quad 14b 125MSPS
ADS5444
ADS1278
13b 250 MHz
8 Ch 24b 128KHz
ADS5424
14b 105 MHz
ADS5463
12b 500 MHz
ADS5400
12b 1GSPS
DAC5670
14b 2.4 GHz
In Development
Released
2007 - 09
James F. Salzman
2010
2011
2012
AMICSA 2010
TPS50601-SP
6A Monolithic QMLV Point of Load DC-DC Converter
-55oC to 210oC Operating Temp
Vin = 4.5V to 8V
Min Output Voltage to 0.9V
Integrated Power MOSFETS
TID performance – 100K Rad
No SEL @ > 85MeV
6A Output Current
– 1A @ 210oC Operation
• Synchronous operation
•
•
•
•
•
•
•
• Start-up Inrush Current Limited
• Reduced External Components
• Easy On/Off Control
• Self-Protected from Fault Conditions
• Low Power Consumption when Switched Off
• Small with Good Thermal Performance
• Customers can use standard TI design software
– 300kHz to 1.4MHz Switching Frequency
• Power Good, Enable, Adjustable Slowstart, Current Limit
• Adjustable Under voltage Lockout
• Cold Sparing capable
• 20 Pin Ceramic Flatpack
• Known Good Die (KGD) Options
Product Preview
James F. Salzman
AMICSA 2010
TI Rad Hard SRAM Releases
James F. Salzman
AMICSA 2010
TI Space Products and QML-V Strategies
•
Strong technology/product portfolio for HiRel applications
– New devices being QMLV and RHA qualified
– Customer & Internal driven roadmaps
•
TI-owned Wafer Fabs, Processes and Designs
– Third party designs validated against TI design rules and processes
•
Established QML-V qualification and production flows
– Fully support New Technology requirements of MIL-PRF-38535
– All optimizations approved through DSCC, Aerospace, and NASA
•
Investments being made to enhance radiation tolerance and reliability
–
–
–
–
–
Addresses the needs of multiple market segments, DHD, Medical, Space Based on commercial high volume processes
3rd party IP partnerships for radiation improvements
Specific devices may be ported to commercial rad-tolerant processes
Total dose radiation testing is performed at qualification on all new QML-V
product releases
– Custom radiation test options are available for SEE & ELDRS
characterization
James F. Salzman
AMICSA 2010
For More Information
• The TI HiRel, Defense & Aerospace
Internet Site
• http://www.ti.com/hirel
• The TI Product Information Center
• 1-800-477-8924
• support.ti.com/sc/pic/americas.htm
James F. Salzman
AMICSA 2010
Thank You
James F. Salzman
AMICSA 2010
James F. Salzman
AMICSA 2010
Down Hole Drilling Harsh Environments
• Environmental Operating Issues
– Shock and vibration
– Temperature and pressure
– High reliability over target lifetime
Seismic applications
-40°C to +125°C
1 year
Logging while drilling
-40°C to +150°C
-40°C to +175°C
1000 hours
200 hours
Wireline
-40°C to +175°C
400 hours
Reservoir monitoring
+150°C to +225°C
6 months
Permanent applications
+150°C
5 years
NBTI, hot carrier, device leakage and latchup are main issues
The same techniques used to harden against radiation effects, improve NBTI,
device leakage, and latchup in high temperature applications !!
James F. Salzman
AMICSA 2010
ADS5400 - 12b 1GSPS ADC
Targets
• 1000MSPS sample rate
• 12-Bit resolution
• Total Power Dissipation: 2.2W
• 72dBc SFDR at 1.25GHz IF and 1GSPS
• 57.5dBFS SNR at 1.25GHz IF and 1GSPS
• 2.1GHz -3dB Input Bandwidth
• 2.0 Vpp Differential Input Voltage
– Adjustable from 1.5-2.0Vpp
• DDR LVDS Outputs (1 or 2 Bus option)
• Inter-leaving Trim Adjustments provided on-chip to achieve >1GSPS
– For gain: range 1.5-2.0Vpp, resolution 120uV
– For offset: range +/-20mV, resolution 120uV
– For clock phase: range +/-50ps, resolution 200fs
• 100 pin CQFP package
• Temperature Range = -55°C to +125°C
• Currently accepting pre-production sample orders!
James F. Salzman
AMICSA 2010
Radiation Hardened 16M SRAM

The C05HA512K32 is a high performance
CMOS SRAM organized as 524,288
words by 32 bits.

20ns read, 10ns write maximum access
time

Asynchronous functionally compatible
with commercial 512Kx32 SRAM’s

Built-in EDAC (Error Detection and
Correction) to mitigate soft errors

Built-in Scrub Engine for autonomous
correction (scrub frequency and delay is
user defined user)

CMOS compatible input and output level,
three state bidirectional data bus

3.3 +/- 0.3V I/O, 1.8 +/- 0.15V CORE

68 Lead Ceramic Quad Flat Pack

Qualified Product Release 3Q 2011
James F. Salzman
AMICSA 2010
Passivation Can Drive Interface Trap Generation Under Radiation
Interface Traps Reduces Transistor Gain in Bipolar Transistors !!!
1.5
Vit (V)
tox = 101 nm
Dose = 100 krad(SiO2)
Nitride passivation is produced using Ammonia NH3, +
Silane SiH4 where 11 hydrogen atoms are released to
form a single molecule of Si3NH4 ( Nitride ) passivation.
1.0
Increasing H
0.5
0.0
A
B
C
Process
The Interface Trap Generation Increases with
the Amount of Hydrogen used in Processing
TEOS ( Tetraethylorthosilicate ) does not use Ammonia
and has no hydrogen generation in the formation of SiO2.
It is used as interlevel dielectric. This step is simply
repeated for final passivation as a replacement for
Nitride. Si(OC2H5)4 → SiO2 + 2O(C2H5)2
After J. R. Schwank, et al., IEEE Trans. Nucl. Sci. 34, 1152 (1987)
MFAB TID ELDRS Level = 6-8K rads
SFAB TID ELDRS Level = 40-50K rads
Trapped Hydrogen from Nitride Production
MFAB
SFAB
Nitride
Metal 2
SiO2 (TEOS)
Metal 1
SiO2 (TEOS)
Active Components
James F. Salzman
SiO2 (TEOS)
Metal 2
SiO2 (TEOS)
Metal 1
SiO2 (TEOS)
Active Components
AMICSA 2010
BiCOM3ZL – Technology Overview
•
Technology Features:
•
SiGe BiCMOS ( 1833BiCOM3ZL)
DT / STI Isolation
0.18 um 5LM
Gox = 75 /38 A
50 GHz 3.3V NPN / PNP
3.3V CMOS
1.8V CMOS
Isolated NMOS
15V DECMOS
•
•
•
•
•
•
•
•
NPN
James F. Salzman
•
•
•
•
•
•
•
•
EEPROM
Poly Fuse
Varactors
C: 2.0 fF/um2 TIN
HSR: Poly 310Ω/sq
LSR: Poly 10Ω/sq
TFR: SiCr:C 50Ω/sq
Thick 6um Cu Inductors
• Q~15 @ 2 GH
•
•
•
200mm Wafers
30% Shrink over 3XL
Status: Qualified Release 2Q10
PNP
AMICSA 2010
James F. Salzman
AMICSA 2010