Mesh Currents - Texas A&M University
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Transcript Mesh Currents - Texas A&M University
Design Margining
Uncertain factors
Temperature
Supply voltage
7/18/2015
Ids decreases with temperature T-1.5
Commercially parts: 0°C to 70°C
Industrial parts: -40°C to 85°C
Military parts: -55°C to 125°C
Compensation circuits
Normally allow 10% or more
ELEN 475
1
Process Variation
Device characteristics follow normal
distribution N(a, )
2
3
Device char within
3 is reported as
variation
7/18/2015
1 =68.26%
2 =95.44%
3 =99.74%
ELEN 475
2
Process Variation
Device
Gate length
Oxide thickness
Doping density
Interconnect
7/18/2015
Metal width, metal thickness
Inter-layer-dielectric thickness
Via resistance
ELEN 475
3
Impact of Process Variation
Delay variation wafer-to-wafer, chip-tochip, region-to-region, or random
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ELEN 475
4
Delay Fault
Path delay fault
Path delay is d
Process variation causes extra delay Δ
If d +Δ>Tcycle, then there is a delay fault
From PIs
or FFs
To POs
or FFs
output
outputwithout
with
variation
P1
P2
P2
Combinational Circuit
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P1
ELEN 475
Tcycle
5
Design Corners
Imaginary box that surrounds the
guaranteed performance
For example, when all devices on one path
has longest gate length, while all devices
on another path has shortest gate length
Rarely happen, but can be a problem
Verification and testing
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ELEN 475
6
Reliability
Device failure/degradation
Hot electron effect
Electromigration
Oxide failure
Transistor degradation
Accelerated life testing
7/18/2015
Over-voltage, over-temperature
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7