Transcript Development of 10 kV 4H-SiC MOSFET device. Potential Outcomes

Development of High Voltage 4H-Silicon
Carbide Power Devices
Dr. Craig A. Fisher
Affl.: School of Engineering, University of Warwick
Research Fellow on the UPE Project (Devices theme).
Project Plans & Objectives
• Development of edge termination structures for
10 kV 4H-SiC power devices.
• Development of reliable ohmic contact solutions
for high power density / high temperature
applications.
• Development of 10 kV 4H-SiC MOSFET device.
Potential Outcomes & Exploitation Plans
• The 10 kV 4H-SiC MOSFET can potentially transform
a range of power electronics applications.
• Opportunity to generate IP using unique processing
capability at Warwick.
Input from the PE Community
• Input from other researchers in the semiconductor
field would be useful
•
Have a particular interest in high-k dielectrics for MOS
gates and surface passivation.