Conventional MOSFET has been used To probe the molecule(ISFET)
Download
Report
Transcript Conventional MOSFET has been used To probe the molecule(ISFET)
FET device and
Molecular interaction
나노 물리소자 특강
Introduction
Spring, 2008
Young June Park
NSI_NCRC, Seoul National University
Korea Nano Research Association
MOSFET as the core of IT
Simple math.
For 0.1*0.1um MOSFET
-
V = Q/C
C= 15 fF/um**2
# of electrons in the
Gate to change 100mV
= 1.5 *10**(-17)/e
=100개
Many new Comers:
From Collinge, INC 07
MOSFET DRAM cell and cell interaction
Cap
W Bit Line
Type A
DRAM cell
Uni. Of Glasgow, 2000
Quantum effects as the new horizons
For MOSFET and conventional electronic devices
5 nm
5
3.
QM for chemistry
Å
<0
02
>
20nm
QM for solid state
MOSFET channel is changed due to
Source drain stress
Nano size effects change Energy band
IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 4, APRIL 2004 191
A Logic Nanotechnology Featuring Strained-Silicon
Scott E. Thompson,
MOSFET channel is changed due to
Source drain stress(3)
Conventional MOSFET has been used
To probe the molecule(ISFET)
IEEE SENSOR CONFERENCE TORONTO, OCTOBER 2003
1
ISFET, Theory and Practice
Prof.Dr.Ir.P.Bergveld Em, University of Twente, Fac.EE, MESA+ Research Institute,
Box 217, 7500 AE Enschede
Conventional MOSFET has been used
To probe the molecule(ISFET)
Stolt, CU, Bio-Chemical SensorsMarch 21, 2006
Conventional MOSFET has been used
To probe the molecule(ISFET)
Conventional MOSFET has been used
To probe the molecule(ISFET)
Conventional MOSFET has been used
To probe the molecule(ISFET)
CNT SET is proposed for molecular
sensing
Carbon Nanotube Single Electron Transistor with Ultra-High Sensitivity for Optical
and Bio-Sensor Kazuhiko Matsumoto Osaka University, ISIR 8-1 Mihogaoka,
Ibaraki-shi, Osaka, Japan, 567-0047
Nanowire MOSFET
Nanowire MOSFET
From Lieber, Havard 2003
강의 진행 요강
Subtitle: Electronics device and Molecules
Tuesday 2-4:30 pm
CTL, 1st floor
박영준 교수
전기신호를 이용해서 신호 및 에너지를
변환하거나, 전환하는 소자가 나노 분야
에서 사용되고 있다. 빛, 화학, 분자와 전
자소자의 interaction 등에 대해서 콜로키
움 형태로 특강을 진행한다.
1. Introduction: motivation of the lecture
1주: 박영준교수
2. Nano semiconductor Device operational principle
1,2주: MOSFET operational principle(박영준교수,
)
3주: Interface States in MOSFET(박영준교수)
4주: Recent Advancement in MOSFET,
Nanowire FET (박영준교수)
3. Electrochemistry for Nanodevice( 성영은교수)
5주: Basic Electrochemistry 1
6주: Basic Electrochemistry 2
8주: characterization techniques(voltametry)
9주: Electric double layer structure
Faradaic interface
Non Faradaic interface
(Lecture schedule may change from Tuesday
12-2 pm or Wednesday)
10주: Review and Midterm
4. Charge states of Biomolecules and FET sensing
11주: DNA(TDB)
12주: Protein(TDB)
5. ISFET and Molecular-insulator interface
(박영준교수)
13주: ISFET Molecular-insulator interface
14주: Nanowire FET for Molecular detection
(박영준교수)
15주. Review session and final