Transcript View File

EE210 Digital Electronics
Class Lecture 7
May 22, 2008
MOS Field-Effect
Transistors (MOSFETs)
2
4.1.7 p-Channel MOSFET
(PMOS)
Fabricated on n-type substrate
with p+ regions for D and S
and p-channel is induced
under gate
Operates same way as nchannel device except vGS, Vt
and vDS are negative
Also, iD enters S and leaves D
Because NMOS can be made
smaller and operate faster and
use lower supply voltage than
PMOS, it has virtually
replaced PMOS
4.1.8 Complementary MOS or CMOS: In CMOS
the NMOS is implemented in p-type substrate and PMOS
transistor is formed in a separate n-type region, known as
an n well. Separated by thick oxide. Also, as alternate an
n-type body is used and the n device is formed in a p well.
Not shown are the connections made to the p-type body
and to the n well; the latter functions as the body terminal
for the p-channel device.
4.2 Current-Voltage Characteristics
4.2.1 Circuit Symbol
(a) Circuit symbol for the n-channel enhancementtype MOSFET. (b) Modified circuit symbol with an
arrowhead on the source terminal to distinguish it
from the drain and to indicate device polarity (i.e., n
channel). (c) Simplified circuit symbol to be used
when the source is connected to the body or when
the effect of the body on device operation is
unimportant
4.2.2 iD-vDS Characteristics
(a) An n-channel enhancement-type MOSFET with vGS and
vDS applied and with the normal directions of current flow
indicated. (b) The iD–vDS characteristics for a device with k’n
(W/L) = 1.0 mA/V2.
The iD–vGS characteristic for an enhancement-type NMOS
transistor in saturation (Vt = 1 V, k’n W/L = 1.0 mA/V2).
Since the drain current is independent of drain
voltage the Saturated MOSFET behaves as an ideal
current source whose value is controlled by vGS.
Equivalent-circuit model of an n-channel
MOSFET operating in the saturation region.
n channel MOSFET
p channel MOSFET
4.3 MOSFET Circuits at DC
Example 4.2:
Design the ckt of Fig
so that transistor
operates at
ID = 0.4mA and
VD = +0.5 V.
Vt = 0.7,
unCox = 100 uA/V2,
L = 1 um, W=32 um
Mid-Term Exam
Friday, June 1, 2007 at 10 am
Home Work No. 4 (Due June 2, 2007)
Problems at the End Of Chapter 4.
1.
2.
3.
4.
Problem 4.108
Problem 4.110
Problem 4.112
Problem 4.113
About Mid-Term Exam …
Will Include Following Topics:
• Representation of Analog Signal by Binary
• Digital Logic Inverters (General)
• Propagation Delay and Power Dissipation
• Diode Logic Gates
• Propagation Delay
• BJT as Amp and Switch (VTC)
• BJT Digital Logic Inverter
• Saturated vs non-saturated BJT
• MOSFET Physical Structure and Operation
• MOSFET as Switch
• CMOS Digital Logic Inverter and VTC
• Propagation Delay and Power Dissipation
In Next Class
We Will Continue to Discuss:
Chap 4
MOS Field-Effect Transistors