Transcript DAC V2
CALIBRATION BOARDS
FOR THE LAr CALORIMETERS
N. Dumont-Dayot, M. Moynot, P. Perrodo, G. Perrot, I. Wingerter-Seez
Laboratoire d’Annecy-Le-Vieux de Physique des Particules
IN2P3-CNRS
74941 Annecy-Le-Vieux, France
C. de La Taille, J.P. Richer, N. Seguin-Moreau, L. Serin
Laboratoire de l’Accélérateur Linéaire,
Université Paris-Sud – B.P. 34
91898 Orsay Cédex, France
K. Jakobs, U. Schaefer, D. Schroff
Institut für Physik Universität Mainz
Mainz, Germany
ATLAS
OUTLINE
ATLAS LAr CALORIMETER READOUT
REQUIREMENTS
HISTORY
ANALOG and DIGITAL DMILL CHIPS
8 CHANNELS BOARD
128 CHANNELS BOARD
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ATLAS Lar EM calorimeter readout
Calibration :
116 boards @ 128 ch
Front End Board (FEB) :
1524 boards @ 128 ch
Electrodes
Cold to warm
Feedthrough
Front End Crate:
Readout and
Calib. signals
CALIB.
FEB
TBB
Controller
Cryostat
CALIBRATION: Requirements and Principle
PULSER
Goal: Inject a precise current pulse [Ical] as close as
possible as the detector pulse
Rise time < 1ns .
HF SWITCH
Decay Time around 450 ns .
Dynamic range : 16 bits (100 μV to 5V) .
Integral non linearity < 0.1% .
Uniformity between channels better than 0.25% (to
keep calorimeter constant term below 0.7%)
Timing between physics and calibration pulse ±1ns
Operation in around 100 Gauss field
Radiation hardness:
ROOM T
LAr
0.1%
Rinj
50 Gy, 1.6 1012 Neutrons/cm2 in 10 years
Taking account safety factors, DMILL chips must be
qualified up to 500 Gy, 1.6 1013 Neutrons/cm2
Run at a few kHz
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HISTORY
12 boards produced in 1998 with COTS [LEB98 and LEB99]
5 years successful operation in beam tests. Problems were
mainly chips badly soldered and dead transistors, but
Radiation tolerance:
Inadequate with COTs that failed irradiation tests at 20 Gy
Chips migration to DMILL technology
Improve parasitic signal at DAC=0:
About 1.2 GeV equivalent (3 % of the high gain range)
HF switch redesigned with a PMOS transistor instead of 4 PNPs
transistors in parallel: 10 times improvement
Delay chip linearity and monotony marginal (and strongly
dependent on power supply)
DAC time stability improvement
Digital part: to be simplified, 10 ALTERAs removed and
replaced by DMILL ASICs.
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128 CHANNELS CALIBRATION BOARD : ANALOG PART
A low offset op. amp. distributes the DAC voltage to the 128 channels.
One low offset op.amp. per channel generates the calibration current through a 5W
[0.1%].
V to I conversion
V follower
5 W 0.1%
Low Off Op Amp
HF Switch
Vout: 50 μV to 5V in 25 W
16 bits DAC
128 channels calibration board
Idc: 2uA to 200 mA
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16 bits DMILL DAC: requirements and design
16 bits dynamic range (16 μV-1V), accuracy 0.1%
Good stability at small DAC value
External R/2R ladder and highly degenerated current sources
DAC DMILL: V1 and V2 (Different Iref)
Bandgap reference voltage (1.5 V) or external voltage
DAC V2: Submitted in Sept 01, area : 8 mm2
123 received in May 02, yield : 90%
DAC V2
16 I sources
DAC V2
External 0.1% R
Iref
Bandgap
V to I convertor
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External 0.1%
degener. R
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DAC performance : Linearity
0.01%
DC measurement performed with
precise multimeter
Measurement performed with the
Bandgap reference
0.01%
Accuracy: 0.01 % or 10 μV
INL < 0.01%: explained by single bit
linearity
0.01%
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DAC performance
Irradiation results: shown at LEB7 (Stockholm) Time stability measured DACs V1
Temperature stability (with the bandgap
reference) measured on 1 DAC V2:
better than -0.01%/K
Due to R and Isources temperature
sensitivity
Vdac with all the bits ON
(DAC V2)
Bit15 ON
0.02%
Bit0 ON
- 51 μV/K
25
47 Temperature
15 h
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DMILL LOW OFFSET Op Amp: Requirements
V to I conversion
Offset around 16mV [DAC LSB] or less .
Offset stable in time
Temperature sensitivity : 0.1% or 1 LSB for
10°C
Integral non linearity < 0.1% .
Speed not crucial: Settling time < 100 ms
Input range: from 5 V to 4 V
Output range:
DC current from 2mA to 200mA
Pulse Out: 50 mV to 5V in Zout=25 W
Power supplies:
V follower
DAC
HF Switch
Op Amp: VDD= +7V and Vss= +2V .
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Low offset op amp design
Used in 0.2% accuracy DC current source (2 μA-200 mA) (Orsay)
External
165kW
0.1%
collector
resistors
Enable input
5W
0.1%
Second stage :
1000/1.2 cascoded
diff. pair
DAC in
External R:
Window of
trimming
Centroid
bipolar diff.
Pair 10/1.2
Output PMOS :
20,000/0.8 for
IDAC=200mA
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External
compens.
1 nF to VP6
Current
out
Fuses for fine offset
trimming to ± 10 μV
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Low offset op amp versions
First version in 0.8 μm BICMOS AMS technology in 2000
Selection inside ±200 μV => 23/24 Op amps=95 %
First DMILL chip: Op Amp V1
Op Amp design: minor modifications compared to the AMS version
40 chips received in Feb 01. Area = 1.82 mm2
Ceramic package JLCC28
3 not working
Selection inside ±200 μV => 32/37 Op amps=86 %
Layout of Op Amp V1
Final version V2
Include HF switch (cost reduction)
Op amp: identical as V1
Chip submitted in May 01. Area : 3 mm2
Plastic package PQFP44
1960*1460
Layout of Op. Amp. V2
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Op Amp performance: Offset
Yield :
Selection inside ±200 μV :
593 chips received Nov 01.
574 Fully functional, 19 out of
working
→ Yield : 96%
364 Op Amp
→ sorting yield : 63.4%
Example of offset trimming:
Op Amp trimmed down to –7 μV
Initial Offset:–254 μV
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Op Amp performance
Irradiation tests : Performed on V1 and shown at LEB7 (Stockholm)
DC Linearity: DC output current measured with a precise multimeter.
Offset not sensitive to the DAC value
Residuals in µV
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Offset stability:
Time stability (10 Op Amps)
Temperature stability (10 Op Amps)
Output DC current monitored
Stability better than 10 mV
Largest variation (<2 mV/degree) for OA
with the largest initial offset
10 chips previously trimmed down to a few
mV kept at 87 degree during 4 days. Stability
found better than 2 mV over this period.
Offset variation
5 mA
or
25 mV
90 minutes
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40 mV
25 °
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50 °
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OP AMP PRODUCTION AND TEST
28000 op amps produced before the end of
2002
Use of the Grenoble robot to test them and
trim op amps with offset < ± 200 µV
DC measurements for 3 DAC values:
Total Offset (in+-in-)
DV Rc (2nd stage offset)
IDC out after PMOS Switch
Check 7.5 V Power Consumption
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DIGITAL PART
I2C
SPAC:
I2C frame
CALOGIC (LAPP Annecy):
Generate calib. Window and
reset signals
SPAC
I2C
Clock40
TTCRx:
ATLAS
TTC
commands
TTCrx
DAC
REG
16
CALOGIC:
16 bits R/W reg.
To load the DAC value
DELAY (CERN):
0-24 ns, step 1ns
32
TTC
decode
REG1
REG2
32
REG3
32
Delay0
4
32
CALOGIC Reg0-3:
32 bits R/W register
To enable the 128 ch.
Delay1
4
16 bits
DAC
ANALOG
PART
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REG0
16
16
16
16
16
16
16
16
Pulsers Pulsers Pulsers Pulsers Pulsers. Pulsers Pulsers Pulsers
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Digital chips: CALOGIC
Control logic : DMILL
Irradiation tests
(ANNECY)
Common DMILL chip to control DAC, pattern and
delays registers and to decode TTCRx commands.
16 mm2 chip, received 39 (MPW 05/01). Yield : 100%
Pattern
CalibIn
Pattern
register
Calib counter
SEE test performed in Feb 02
(Louvain)
• no SEU up to ~8 1012 p+
• In ATLAS < 2 SEU/yr
(32 bits)
(60 MeV)
SCL
SDA
(11 bits)
I2C
Function
Select
Reset register
Clock40Des1
Command
TTCrx
decoding
ResetIn
PowerOn
Reset
CalibOut
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Autozero
ResetOut
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Digital chips: DELAY
Delay chip : DMILL
(CERN)
SEE test performed in Feb 02 (Louvain)
To align physics signal and calibration pulse
4 delay lines/chip 0-24 ns, 1ns step
Linearity residuals: ±60 ps
Jitter = 25 ps
4 chips monitored
One error occurred, cleared by power reset
Residuals (ns)
22 ps
Jitter
+ 60 ps
- 60 ps
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8 channels prototype towards the 128 channels board
Board very different from
Module 0
8 channels module
Channels no longer aligned but
staggered in depth
Module 0 128 channels board
SPAC2
DAC
Difficult tuning
Ground bounce
2V change with enabled channels
80 µV DAC offset
DAC change with all channels on
Overshoot
Signal uniformity
DC uniformity
Damaged chips
Oscillations
Ripple noise
Linearity
Calolgic
TTCRx
Delay
8 Opamps
& switches
But all hopefully fixed!
8 outputs
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Pulse shape before shaping
Full DAC range
100 µV 1V
Up to 5V pulses in 50 Ω
Rise time
DAC=100 µV
< 2 ns
Very small variation with
DAC
Undershoot
Due to 50 Ω line between
the switch and R0: should
be 25 Ω
Will be corrected
DAC=1 mV 0dB
DAC=10 mV 0dB
DAC=0.1V -20dB
DAC=1V -40dB
HF Ringings:
At small DAC values,
due to parasitic package
inductance
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Pulse shape after shaping
Parasitic injected charge
Peak of Qinj:
• Equivalent to DAC=30 µV
Qinj
At signal peak :
• Qinj< DAC = 15 µV
Improvement by >10
compared to module 0
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DAC=0µV
DAC=100µV 0dB
DAC=1mV -20dB
DAC=1V -80dB
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Parasitic Injected Charge (PIC) Improvement
Improvement :
CH7 had the Nwell tied to
5V, as in the original
configuration.
Nwell of the other channels
connected to the PMOS
source to reduce the
ringings
=> Clear improvement of Qinj
On 8 channels
Good uniformity of the PIC
CH7 : VB=+5V
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DAC=1mV -20dB
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DC and Pulse Linearity
Measured on 3 gains
1-10-100
Gain 100
Pulse measurements
+0.05%
+0.05%
-0.05%
-0.05%
Pulse Linearity Residuals
In red
After shaping (tp=50ns)
DC current measur.
Gain 10
In black
With Keithley
Dc Linearity Residuals
Gain 1
Example of problems
DAC referenced to VP6
by mistake
Bad 5Ω resistor brand
Dynamic performance at
the level to DC
performance
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+0.1%
Gain 1
DC linearity
+0.05% Dac Ref corrected
Bad R replaced
-0.05%
-0.1%
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Designing the 128ch board
16 times replication of the 8 channels
module
Many tricky PCB layout details: to avoid
coupling between digital and sensitive
analog signals
VP6
ref
Difficult VP6 Distribution
Connection between 5Ω and ref. VP6 taken
for the DAC
Must be uniform for all channels within
0.1%
Can’t be shared between channels to
minimize variation of amplitude with
number of enabled channels
Star configuration mandatory
All VP6 lines equalized in length 150 mm
Common reference point on board center :
dimension 2 x 1 cm = 1 mΩ
=> 5 layers necessary for the VP6 routing
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DAC
220 mm
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128 channels PCB layout
Top layer : analog components
C5 layer:
Bottom layer: Digital components
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CONCLUSION
2 prototypes of 128 channels calibration boards
ready for tests of final ATLAS calorimeter
electronics next october (1/2 crate)
Production of 130 boards for ATLAS:
Call for tenders at the beginning of 2003
Chips production
DELAYS (600 already produced)
DAC, SPAC, CALOGIC: to be produced on the
same digital wafer in 2003
OP AMPs (28 000 to be produced before the
end of 2002)
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