Transcript Ch8_SB-Circuitsx

Optimizing Power @ Standby
Circuits and Systems
Jan M. Rabaey
Low Power Design Essentials ©2008
Chapter 8
Chapter Outline
 Why Sleep Mode Management?
 Dynamic power in standby
– Clock gating
 Static power in standby
– Transistor sizing
– Power gating
– Body biasing
– Supply voltage ramping
Low Power Design Essentials ©2008
8.2
Arguments for Sleep Mode Management
 Many computational applications operate in burst
modes, interchanging active and non-active modes
– General purposes computers, cell phones, interfaces, embedded
processors, consumer applications, …
 Prime concept: Power dissipation in standby should
absolutely minimum, if not zero
 Sleep mode management has gained importance with
increasing leakage
Design
Time
Low Power Design Essentials ©2008
Clock gating
Run Time
Leakage
elimination
8.3
Standby Power - Was Not A Concern In Earlier Days
Pentium-1: 15 Watt (5V - 66MHz)
Pentium-2: 8 Watt (3.3V- 133 MHz)
Processor in idle mode!
Floating Point Unit and Cache powered down when not in use
Low Power Design Essentials ©2008
[Source: Intel]
8.4
Dynamic Power - Clock Gating
 Turn off clocks to idle modules
– Ensure that spurious activity is set to zero
 Must ensure that data inputs to module
are in stable mode
– Primary inputs are from gated latches or
registers
– Or, disconnected from interconnect network
 Can be done at different levels of system
hierarchy
Low Power Design Essentials ©2008
8.5
Clock Gating
Turning off the clock for non-active components
Clk
Register File
Enable
Bus
Logic Module
Enable
Logic Module
Disconnecting the inputs
Low Power Design Essentials ©2008
8.6
Clock-gating Efficiently Reduces Power
Without clock gating
30.6mW
With clock gating
MPEG4 decoder
8.5mW
VDE
0
5
10
15
20
25
Power [mW]
DEU
MIF
DSP/
HIF
90% of F/F’s clock-gated.
896Kb SRAM
70% power reduction by clockgating alone.
© IEEE 2002
Low Power Design Essentials ©2008
[Ref: M. Ohashi, ISSCC’02]
8.7
Clock Gating
 Challenges to skew management and clock distribution (load on
clock network varies dynamically)
 Fortunately state-of-the-art design tools are starting to do a better
job
– For example, physically aware clock-gating inserts gaters in clock-tree
based on timing constraints and physical layout
Power savings
Simpler skew management, less area
CG
CG
CG
CG
CG
Low Power Design Essentials ©2008
8.8
Clock Hierarchy and Clock Gating
Example: Clock distribution of dual-core Intel Montecito processor
© IEEE 2005
“Gaters” provided at lower clock tree levels
Automatic skew compensation
Low Power Design Essentials ©2008
[Ref: T. Fischer, ISSCC’05]
8.9
Trade-Off between Sleep-Modes and Sleep-Time
Typical operation modes
Active mode
normal processing
Standby mode
fast resume
high passive power
Sleep mode
slower resume
low passive power
Resume time from clock gating determined by the time it
takes to turn on the clock distribution network
Standby Options:
 Just gate the clock to the module in question
 Turn off phased-locked loop(s)
 Turn off clock completely
Low Power Design Essentials ©2008
8.10
Sleep Modes in mProcessors and mControllers
[Ref: S. Gary, Springer’95]
[Ref: TI’06]
TI MSP430™
From standby to active in 1 ms
Using dual clock system
• 0.1-μA power down
• 0.8-μA standby
• 250-μA / MIPS @ 3 V
Low Power Design Essentials ©2008
8.11
Wake-up Delay
The Standby Design Exploration Space
Sleep
Nap
Doze
Standby
Standby Power
Trade-off between different operational modes
Should blend smoothly with run-time optimizations
Low Power Design Essentials ©2008
8.12
Also the Case for Peripheral Devices
Hard disk
Psleep
W
Pactive
W
Tsleep
sec
Tactive
sec
IBM
0.75
3.48
0.51
6.97
Fujitsu
0.13
0.95
0.67
1.61
Wireless LAN Card
Power
Transitions
Low Power Design Essentials ©2008
TX
RX
Doze
Off
1.65W
1.4W
0.045W
0W
To Off:
To Doze:
62 msec 34 msec
[Ref: T. Simunic, Kluwer’02]
8.13
The Leakage Challenge – Power in Standby
 With clock-gating employed in most
designs, leakage power has become the
dominant standby power source
 With no activity in module, leakage power
should be minimized as well
– Remember constant ratio between dynamic
and static power …
 Challenge – how to disable unit most
effectively given that no ideal switches are
available
Low Power Design Essentials ©2008
8.14
Standby Static Power Reduction Approaches




Transistor stacking
Power gating
Body biasing
Supply voltage ramping
Low Power Design Essentials ©2008
8.15
Transistor Stacking
 Off-current reduced in complex gates (see
leakage power reduction @ design time)
 Some input patterns more effective than others
in reducing leakage
 Effective standby power reduction strategy:
– Select input pattern that minimizes leakage current of
combinational logic module
– Force inputs of module to correspond to that pattern
during standby
 Pro’s: Little overhead, fast transition
 Con: Limited effectiveness
Low Power Design Essentials ©2008
8.16
Latches
Combinational
Module
…
Clk
…
Latches
Transistor Stacking
Standby
Low Power Design Essentials ©2008
[Ref: S. Narendra, ISLPED’01]
8.17
Forced Transistor Stacking
Useful for reducing leakage in non-critical shallow gates
(in addition to high VTH)
Low Power Design Essentials ©2008
[Ref: S. Narendra, ISLPED’01]
8.18
Power Gating
Disconnect module from supply rail(s)
during standby
sleep
Logic
sleep
 Footer or header transistor, or both
 Most effective when high VT transistors
are available
 Easily introduced in standard design
flows
 But … Impact on performance
Very often called “MTCMOS” (when using high- and low- threshold devices)
Low Power Design Essentials ©2008
[Ref: T. Sakata, VLSI’93; S. Mutoh, ASIC’93]
8.19
Power Gating ─ Concept
Leakage current reduces because
 Increased resistance in leakage path
 Stacking effect introduces source
biasing
VDD
IN (= 0)
IN = 0
Ileak
OUT
M1
M1
VTH shift
VS = Ileak RS
Sleep
Extra resistance
RS
RS
VS
(similar effect at PMOS side)
Low Power Design Essentials ©2008
8.20
Power Gating Options
sleep
sleep
Low VT
Low VT
sleep
footer + header
Low VT
sleep
footer only
header only
 NMOS sleeper transistor more area efficient than PMOS
 Leakage reduction more effective (under all input patterns)
when both footer and header transistors are present
Low Power Design Essentials ©2008
8.21
Other option: Boosted-Gate MOS (BGMOS)
VDD
CMOS logic
- low VTH
- thin TOX
Virtual GND
<Standby> <Active>
VBOOST
VDD
0V
Low Power Design Essentials ©2008
Leak cut-off Switch (LS)
- high VTH
- thick TOX
(eliminates tunneling)
[T. Inukai, CICC'00]
8.22
Other Option: Boosted-Sleep MOS
(also called Super-Cutoff CMOS or SCCMOS)
VDD
CMOS logic
- low VTH
- thin TOX
Virtual GND
<Standby> <Active>
VDD
0
-Vboost
Low Power Design Essentials ©2008
Leak cut-off Switch (LS)
- normal (or high) VTH
- normal TOX
Area efficient
[Ref: T. Inukai, CICC’00]
8.23
Virtual Supplies
Active Mode
Standby Mode
© IEEE 2003
VDD
Virtual VDD
ON
OFF
...
ON
VDD
Virtual VDD
...
Virtual GND
GND
Noise on virtual supplies
Low Power Design Essentials ©2008
Virtual GND
OFF
GND
Virtual supply collapse
[Ref: J. Tschanz, JSSC’03]
8.24
Decoupling Capacitor Placement
Longer
time
constant
Oxide
leakage
Reduced
leakage
Logic
Logic
© IEEE 2003
Decap on supply rails
Decap on virtual rails
Performance

Convergence time
Oxide leakage savings
Low Power Design Essentials ©2008
[Ref: J. Tschanz, JSSC’03]


8.25
Normalized leakage power in idle
mode
Leakage Power Savings versus Decap
1
Low-leakage
133nF decap on
virtual VCC
0.8
1.32V
75°C
40%
0.6
No decap on
virtual VCC
0.4
0.2
90%
© IEEE 2003
0
10ns
1ms
10ms
100ms
10ms
Idle time
Low Power Design Essentials ©2008
[Ref: J. Tschanz, JSSC’03]
8.26
How to Size the Sleep Transistor?
 Sleep transistor is not free – it will degrade
the performance in active mode
 Circuits in active mode see the sleep
transistor as extra power line resistance
– The wider the sleep transistor, the better
 Wide sleep transistors cost area
– Minimize the size of the sleep transistor for given
ripple (e.g. 5%)
– Need to find the worst-case vector
Low Power Design Essentials ©2008
8.27
Sleep Transistor Sizing
 High-VTH transistor must be very large for low resistance
in linear region.
 Low-VTH transistor needs less area
for same resistance.
MTCMOS
Boosted
Sleep
NonBoosted
Sleep
Sleep-TR
size
5.1%
2.3%
3.2%
Leakage
power
reduction
1450x
3130x
11.5x
Virtual
supply
bounce
60 mV
59 mV
58 mV
Low Power Design Essentials ©2008
[Ref: R. Krishnamurthy, ESSCIRC’02]
8.28
Preserving State
 Virtual supply collapse in sleep mode
causes the loss of state in registers
 Keeping the registers at nominal VDD
preserves the state
– These registers leak …
 Can lower the VDD in sleep
– Some impact on robustness, noise and softerror immunity
Low Power Design Essentials ©2008
8.29
Latch Retaining State during Sleep
Transmission gate
sleep
sleep
D
Q
sleep
sleep
Clk
Black-shaded devices use low-VTH tranistors
All others are high VTH.
Low Power Design Essentials ©2008
[Ref: S. Mutoh, JSSC’95]
8.30
MTCMOS Derivatives Preventing State Loss
VDD
VDD
Vretain
HVT
low VTH
logic
High VTH
(small W)
sleep
virtual GND
virtual VDD
sleep
High VTH
low VTH
logic
Clamping
Retention
Reduce voltage and retain state
Low Power Design Essentials ©2008
8.31
Sleep Transistor Placement
“strapper”
cells
VDD
Standard cell row
GND
M3
VDD
VDD’
VDD’
GND’
GND’
M4
M4
M3
GND
No sleep transistors
Low Power Design Essentials ©2008
VDD
GND
With headers and footers
8.32
Sleep Transistor Layout
ALU
Sleep
transistor
cells
Area overhead
Low Power Design Essentials ©2008
PMOS
6%
NMOS
3%
[Ref: J. Tschanz, JSSC’03]
8.33
Dynamic Body Biasing
 Increase thresholds of transistors during sleep
using reverse body biasing
– Can be combined with forward body biasing in active
 No delay penalty
But
 Requires triple-well technology
 Limited range of threshold adjustments (<100mV)
– Not improving with technology scaling
 Limited leakage reduction (<10x)
 Energy cost of charging/discharging the substrate
capacitance
Low Power Design Essentials ©2008
8.34
Dynamic Body Biasing
Active mode: Forward Body Bias
VDD
Standby mode: Reverse Body Bias
PMOS
body
VDD
VHIGH
FBB
PMOS
bias
PMOS
body
...
...
NMOS
bias
NMOS
body
FBB
PMOS
bias
RBB
...
NMOS
bias
...
RBB
GND
GND
VLOW
NMOS
body
© IEEE 2003
Low threshold, high performance
High threshold, low leakage
Can also be used to compensate for threshold variations
Low Power Design Essentials ©2008
[Ref’s: T Kuroda ISSCC’96; J. Tschanz, JSSC’03]
8.35
The Dynamics of Dynamic Body Bias
© IEEE 1995
Needs level shifting and
voltage-switch circuitry
Low Power Design Essentials ©2008
[Ref: K. Seta, ISSCC’95]
8.36
Body Bias Layout
ALU
Sleep transistor LBGs
ALU core LBGs
Number of ALU
core LBGs
30
Number of sleep transistor
LBGs
10
PMOS device width
Area overhead
13 mm
8%
ALU core LBGs
Sleep transistor LBGs
LBG: Local bias generator
Low Power Design Essentials ©2008
[Ref: J. Tschanz, JSSC’03]
8.37
DBB for Standby Leakage Reduction - Example
VBC (0.13 mm2)
© Springer 2006
Application-specific processor
(SH-mobile)
 250 nm technology
 core at 1.8 V
 I/O at 3.3 V
 3.3M transistors
Low Power Design Essentials ©2008
[Ref: M. Miyazaki, Springer’06]
8.38
Effectiveness of Dynamic Body Biasing
0.6
0.5
VTH (V)
0.4
Forward VBS
0.3
0.2
Reversed VBS
0.1
0
-2
-1
0
1
2
VBS (V)
Practical VTH tuning range less than 150 mV in 90 nm technology
Low Power Design Essentials ©2008
8.39
Supply Voltage Ramping (SVR)
 Reduce supply voltage of modules in sleep mode
– Can go to 0 V if no state retention is necessary
– Down to state retention voltage otherwise,
(see Memory in next Chapter),
or move state to persistent memory before power-down
 Most effective leakage reduction technique
– Reduces current and voltage
But
 Needs controllable voltage regulator
– Becoming more often present in modern integrated system designs
 Longer re-activation time
Simplified version switches between VDD and GND (or VDDL)
Low Power Design Essentials ©2008
[Ref: M. Sheets, VLSI’06]
8.40
Supply Ramping
VDD
0
VDD
DRV
Module
Module
Full power down
Power down with data retention
 Standby power = VDD(standby) x Ileak(standby)
 Modules must be isolated from neighbors
 Creating “voltage islands”
Low Power Design Essentials ©2008
8.41
Supply Ramping ─ Impact
Leakage power as a function of the supply voltage (90 nm)
-9
4
x 10
3.5
3
Inverter
Pleak
2.5
2
1.5
1
Factor 8.5
Nand4
0.5
0
0
0.1
0.2
0.3
0.4
0.5
VDD
0.6
0.7
0.8
0.9
1
Because of DIBL, dropping supply voltage causes dramatic reduction
in leakage – Can go as low as 300 mV before data retention is lost
Low Power Design Essentials ©2008
8.42
VDDH
VDDL
GND
VDDL (RV)
VDDH
VDDL
GND
VDDH
VDDH
VDDL
GND
Integration in Standard Cell Layout Methodology
Vvdd
Vvdd
GND
Awake
Vvdd
GND
GND
Vvdd
Awake_buf
Power switch cell
GND
Integration into power grid
 Power switch cell easily incorporated into standard
design flow
– Cell has same pitch as existing components
– No changes required to cell library from foundry
 Switch design can be independent of block size
Low Power Design Essentials ©2008
8.43
Standby Leakage Management ─ A Comparison
Transistor
Stacking
Power Gating
Dynamic Body
Biasing
Supply Voltage
Ramping
Pro’s
 Conventional
technology
 No performance
impact
 Conventional
technology
 Conceptually
simple
 Most effective
 Reuse of standard
designs
 No performance
impact
 Most effective
 Also available in
switched version
Con’s
 Limited impact
 Special registers
 Performance
impact of serial
transistor
 Changes in design
flow
 Triple well
 Slow activation
 Does not fare well
with technology
scaling
 Needs voltage
regulator or extra
rails
 Slow activation
Potential
Savings
 5 - 10
 2 - 40
 2 - 1000
 Huge
Low Power Design Essentials ©2008
8.44
Some Long-Term Musings
 Ideal power-off switch should have zero leakage current
(S = 0 mV/decade)
 Hard to accomplish with traditional electronic devices
 Maybe possible using MEMS – mechanical switches
have a long standing reputation for good isolation
Low Power Design Essentials ©2008
[Ref: N. Abele, IEDM’05]
8.45
Summary and Perspectives
 Today’s designs are not leaky enough to be truly powerperformance optimal! Yet, when not switching, circuits
should not leak!
 Clock gating effectively eliminates dynamic power in
standby
 Effective standby power management techniques are
essential in sub-100 nm design
– Power gating the most popular and effective technique
– Can be supplemented with body biasing and transistor stacking
– Voltage ramping probably the most effective technique in the
long range (if gate leakage becomes a bigger factor)
 Emergence of “voltage or power” domains
Low Power Design Essentials ©2008
8.46
References
Books and Book Chapters
 V. De et al, “Techniques for Leakage Power Reduction,” in A. Chandrakasan et al, Design of
High-Performance Microprocessor Circuits, Ch. 3, IEEE Press, 2001.
 K. Roy et al, “Circuit Techniques for Leakage Reduction,” in C. Piguet, Low-Power Electronics
Design, Ch. 13, CRC Press, 2005.
 S. Narendra and A. Chandrakasan, Leakage in Nanometer CMOS Technologies, Springer , 2006.
Articles
 Abele, N.; Fritschi, R.; Boucart, K.; Casset, F.; Ancey, P.; Ionescu, A.M., “Suspended-gate
MOSFET: bringing new MEMS functionality into solid-state MOS transistor,” Proc. Electron
Devices Meeting, 2005. IEDM Technical Digest. IEEE International, pp 479-481, Dec. 2005
 T. Fischer, et al., “A 90-nm variable frequency clock system for a power-managed Itanium®
architecture processor,” IEEE J. Solid-State Circuits, pp.217–227, Febr. 2006.
 S. Gary, “Low-Power Microprocessor Design,” in Low Power Design Methodologies, Ed. J.
Rabaey and M. Pedram, Chapter 9, pp. 255-288, Kluwer Academic, 1995.
 T. Inukai et al., “Boosted Gate MOS (BGMOS): Device/Circuit Cooperation Scheme to Achieve
Leakage-Free Giga-Scale Integration,” CICC, pp. 409-412, May 2000.
 H. Kam et al., “A new nano-electro-mechanical field effect transistor (NEMFET) design for lowpower electronics, “ IEDM Tech. Digest, pp. 463- 466, Dec. 2005.
 R. Krishnamurthy et al, “High-performance and low-power challenges for sub-70nm
microprocessor circuits,” 2002 IEEE ESSCIRC Conf., pp. 315-321, Sept. 2002.
 T.Kuroda et al., “A 0.9V 150MHz 10mW 4mm2 2-D Discrete Cosine Transform Core Processor
with Variable-Threshold-Voltage Scheme,” JSSC, vol. 31, no. 11, pp. 1770-1779, Nov. 1996.
Low Power Design Essentials ©2008
8.47
References (cntd)











M. Miyazaki et al., “Case Study: Leakage Reduction in Hitachi/Renesas Microprocessors”, in A.
Narendra, Leakage in Nanometer CMOS Technologies, Ch 10., Springer, 2006.
S. Mutoh et al., 1V high-speed digital circuit technology with 0.5 mm multi-threshold CMOS,“ Proc.
Sixth Annual IEEE ASIC Conference and Exhibit, pp. 186-189, Sept. 1993.
S. Mutoh et al., “1-V power supply high-speed digital circuit technology with multithreshold-voltage
CMOS”, IEEE Journal of Solid-State Circuits, vol. 30, pp. 847 - 854, August 1995.
S. Narendra, et al., “Scaling of Stack Effect and its Application for Leakage Reduction,” ISLPED,
pp. 195-200, Aug. 2001.
M. Ohashi et al, “A 27MHz 11.1mW MPEG-4 Video Decoder LSI for Mobile Application,” ISSCC,
pp. 366-367, Feb. 2002.
T. Sakata, M. Horiguchi, K. Itoh; Subthreshold-current reduction circuits for multi-gigabit DRAM's,
Symp. VLSI Circuits Dig. , pp. 45 - 46, May 1993.
K. Seta, H. Hara, T. Kuroda, M. Kakumu, and T. Sakurai, "50% active-power saving without speed
degradation using standby power reduction (SPR) circuit," IEEE International Solid-State Circuits
Conference, vol. XXXVIII, pp. 318 - 319, February 1995.
M. Sheets et al, J, "A Power-Managed Protocol Processor for Wireless Sensor Networks," Digest
of Technical Papers 2006 Symposium on VLSI Circuits, pp. 212-213, June 15-17, 2006.
T. Simunic, "Dynamic Management of Power Consumption", in Power Aware Computing, edited
by R. Graybill, R. Melhem, Kluwer Academic Publishers, 2002.
TI MSP430 Microcontroller family, http://focus.ti.com/lit/ml/slab034m/slab034m.pdf
J. W. Tschanz, S. G. Narendra, Y. Ye, B. A. Bloechel, S. Borkar, and V. De, "Dynamic sleep
transistor and body bias for active leakage power control of microprocessors," IEEE Journal of
Solid-State Circuits, vol. 38, pp. 1838 - 1845, November 2003.
Low Power Design Essentials ©2008
8.48