Transcript Chap14

Fig. 14.1 Switching times of the BJT in the simple inverter circuit of (a) when the input v1 has the pulse waveform on (b). The effects
of stored base charge following the return of v1 to V1 are explained in conjunction with Eqs. (14.2) and (14.3).
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Fig. 14.20 Analysis of the TTL gate with the input high. The circled numbers indicate the order of the analysis steps.
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Fig. 14.22 Analysis of the TTL gate when the input is low. The circled numbers indicate the order of the analysis steps.
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Fig. 14.23 The TTL gate and its voltage transfer characteristic.
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Fig. 14.24 The TTL NAND gate.
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Fig. 14.25 Structure of the multiemitter transistor Q1.
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Fig. 14.28 A Schottky TTL (known as STTL) NAND gate.
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Fig. 14.33 Basic gate circuit of the ECL 10K family.
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Fig. 14.35 Simplified version of the ECL gate for the purpose of finding transfer characteristics.
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Fig. 14.36 The OR transfer characteristic vOR versus v1, for the circuit in Fig. 14.35.
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Fig. 14.38 The NOR transfer characteristic, vNOR versus v1, for the circuit in Fig. 14.35.
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Fig. 14.44 Development of the BiCMOS inverter circuit: (a) The basic concept is to use an additional bipolar transistor to increase the
output current drive of each QN and QP of the CMOS inverter; (b) the circuit in (a) can be thought of as utilizing these composite devices;
(c) to reduce the turn-off times of Q1 and Q2, “bleeder resistors” R1 and R2 are added; (d) implementation of the circuit in (e) using
NMOS transistors to realize the resistors; (e) an improved version of the circuit in (c) obtained the lower end of R1 to the output mode.
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