Transcript Memory Technology Comparison

Memory Technology Comparison
Parameter
Z-RAM
DRAM
SRAM
Size
1
1.5x
4x
Structure
Single
Transistor
Transistor +
Cap
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Transistor
Performance
1
0.5x
2x
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Silicon on insulator technology (SOI) refers
to the use of a layered silicon-insulator-silicon
substrate in place of conventional silicon
substrates in semiconductor manufacturing
System-on-a-chip or system on chip (SoC or
SOC) refers to integrating all components of a
computer or other electronic system into a single
integrated circuit (chip).
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Silicon on insulator
• Developed by IBM
• Speed 30% faster than complementary
metal-oxide semiconductor (CMOS)• Power consumption is reduced to 80%
• Reduce the soft error rate
• SOI microchip operate faster and cooler
than CMOS.
• SIMOX (Separation by IMplantation of
Oxygen)
• Currently, SOI chips are used in IBM's
AS/400 iSeries servers
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Z-RAM
Zero - RAM
Or
Zero Capacitor –
RAM
EMBEDDED
(SHRINK
MEMORY)
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Device Overview
• Compatible with standard SOI logic
or memory process
• Single Transistor bitcell
• No capacitor
• Small Cell Size
• As scalable as CMOS
• No new materials
• Work for N and PMOS devices
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Architecture
• ZRAM is a library of parallel search
algorithms and the corresponding
data structures. The implementation
is application-independent and
machine-independent. The interface
is user-friendly and lets nonspecialists use the power of parallel
computers
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Host System
At the bottom of ZRAM lies a thin hostsystem layer. It serves as a central place
for gathering most of the machinedependent code to ensure the portability
of the other three layers. It provides the
basic message-passing and timemeasurement primitives in a machineindependent form. The message-passing
operations are organized in two groups:
1. Front end Communication
2. Horizontal Communication
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Message Passing Interface
(MPI-)
• Makes portable
• Machine independent
• Modeled on subset of standard message
passing
• Send & Receive primitives of MPI• Do parallel processing
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Service Modules
•
•
•
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Virtual Front end Processor
Termination detection
Dynamic Load Balancing
Check Pointing
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Virtual Machine
• It is the front hand
• It has service modules that enhance
MPI-
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Search Engine
•
•
•
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Branch & Bound
Reverse Search
Backtracking
Tree Size Estimation
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Applications Interface
• It directly run the Applications
• Separate the problem specific and
problem independent part of
Applications
• Than continue it to the lower layers
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Benefits Over Traditional
SRAM & DRAM
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•
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Smaller product size
Cost savings
Manufacturing Savings
Minimal Standby Power
SOI Process
Lithography Friendly
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Conclusion
While memory technologies like SRAM and DRAM have
long dominated the electronics industry, the migration to
ever smaller process geometries is driving the need for an
alternate solution. That solution, both today and for the
future, might well be Z-RAM memory technology. Its low
cost and high performance enables it to act as a direct
SRAM replacement in certain applications such as high
density cache memories for microprocessors, game
processors, and high-performance SOCs in general. Of
course, Z-RAM is a high performance volatile memory, so it
is not appropriate for applications where permanent storage
is required. Even more important, thanks to its scalability,
ZRAM is the only memory technology to date that is well
positioned for use both as embedded and stand-alone
memory in applications where DRAM has reached its
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scaling limit
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