Transcript Fine Structure Splitting in QDs Crystal Symmetry, Strain, and Piezo

Electronic charge distribution in silicon
nanowire transistors
Objective:
• Understand the charge distribution in
silicon nanowires.
• What factors govern the charge
distribution.
Approach:
• Application of 2D Top of the barrier(ToB)
model.
• Study effects of
• Crystal orientation
• Cross-section shape
• Cross-section size.
Impact:
• Atomistic approach is essential to
understand the charge distribution.
• Affects the overall electrostatic and
transport characteristics of wires.
• Results published in TECHCON 2008
Abhijeet Paul
Fig.1: ToB based C-Vg and Ids-Vg simulation of
[110], 5nm square gate all around nanowire transistor.
Results:
• [100] and [110] wires are better for
ntype devices. [111] bad for ntype
devices.
• Crystal and structural symmetry decide
the electron distribution in the wires.
• Triangular wires are most symmetry
breaking.