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Semiconductor Processing (front-end)
Stuart Muter
617.371.3853
[email protected]
12/02/2002
Semiconductor Processing
Agenda: An overview of the key steps in semiconductor processing (how to make one of Stuart’s
wafers).
A lot of information is in the packet, we will not be able
to cover it all.
2
Table of Contents
Section A
Introduction to Semiconductor
Manufacturing
Section B
Key Processing Steps
- Deposition
- Etch
- Lithography
- Doping and Anneal
- CMP
Section C
3
Future Trends
SECTION A:
Introduction to Semiconductor
Manufacturing
Front End Processing
Key Steps
•Deposition
- CVD
- PVD
- Oxidation
•Etch
•Lithography
•Doping and Anneal
- Diffusion
- Ion Implant
- RTP
•CMP
5
Moore’s Law
Transistor density doubles every 2 years
Moore’s Law
Source: www.intel.com
6
Wafer Sizes
Source: Design News
IC Feature Size Trends
7
State of the Art Semi Device
•0.13 micron critical dimension (human hair diameter is
approx. 100 microns).
•7 metal layers
•25 mask steps
•300 - 400 process steps
8
State of the Art Fab
•300mm wafers
•$2-3 billion cost
•wafer cycle time: 30 -80 days
•WIP: 20 - 40K wafers
•Full material automation
•Cleanroom: Class 10 or 100
•Mini-environment: Class 0.1
9
Semi and Semi-Equipment Industries
Market Segmentation
Worldwide Semiconductor
Market
Source: WSTS 11/01
10
Semi-Equipment Industries
Wafer Fab Equipment Spending
WFE Revenue Forecast by Equipment
Segment ($ Millions)
Equipment Segment
Worldwide Fab
Change (%)
Total Lithography/Track
Total Removal Processes
Total Deposition
Total Diffusion/RTP
Total Ion Implantation
Total Process Control
Total Process Control
Total WFE
Source: Gartner Dataquest (July 2002)
11
2001
23,654
-28.6
5,750
6,177
4,920
789
908
3,578
19
23,654
2002
18,929
-20
4,999
4,687
3,937
639
708
2,761
28
18,929
2003
26,908
42.1
7,603
6,375
5,784
884
987
3,480
54
26,908
Device Manufacturing
0.5µ CMOS Process Flow
12
Fab
Integrated Circuit Manufacturing Process
The “big picture” process
13
SECTION B:
Key Processing Steps
Blanket Metal Deposition
Typically PVD or MCVD
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Physical Vapor Deposition
•Preferred conductor
deposition technology
•Barrier and seed layer for Cu
•DC/RF magnetron sputtering
•Conductors:
- Al (interconnect), Ti, TiN,
TiW
(barrier and ARC), W
(vias), Cu
16