Transcript MIL STD 1553 - ESA Microelectronics Section

AMICSA 2008: Radiation Tests on SOI
A 1553 Transceiver ASIC for Space Embedded
Applications using a SOI Technology
Cascais, Portugal
1st
September 2008
A.Wagner EADS Astrium
S. Chicca - Aurelia Microelettronica
A.Colonna- Aurelia Microelettronica
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AMICSA 2008: Radiation Tests on SOI
Presentation Contents
•
MIL 1553 Transceiver status
•
Transceiver General Block Diagram and Features
•
Technology selection for a latch up free design
•
Architectural design choices to improve the transceiver robustness
against TID
•
TID degraded models extraction and degraded-transceiver simulation
campaign
•
Layout countermeasures to reduce effects of TID-induced leakage
currents
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AMICSA 2008: Radiation Tests on SOI
MIL STD 1553 Transceiver
The MIL STD 1553 IC transceiver has been designed by Aurelia and Astrium EADS,
prime contractor, and placed and routed by Aurelia in the frame of the ESA
Program
“Europeanisation of MIL SDT 1553 Data Products”
in X FAB 1.0mm HV SOI technology.
Transceiver status:
•
•
•
I First run silicon functional with parametric non compliances recovered by FIB
repair in I silicon
II Second run silicon showed recovery of all parametric non compliances
Co60 TID irradiation tests performed on First run by EADS Astrium and are planned
for the Second run
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AMICSA 2008: Radiation Tests on SOI
Transceiver Design
The transceiver design at architectural level has been conducted by taking into
account the following requirements:
–
–
The transceiver has to be compliant with the STD 1553 physical layer specifications
The transceiver has to be latch-up free and it is used in space environment (TID tests
performed up to 100Krad (Si) TID showed no deviation of the Electrical Characteristics up
to 50Krad
The rad-hardness of the design has been achieved by:
–
–
–
–
Technology selection: X-FAB SOI HV 1.0um CMOS process is latch up free
Architectural Design choices
Detailed Design and Layout choices
Extensive Simulation Campaign and Design Refining with TID-degraded models (in house
built) based on TID tests performed on basic components
We will present the transceiver design with special attention to the countermeasures
undertaken to improve design rad-hardness and the results of the first run TID test
campaign
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AMICSA 2008: Radiation Tests on SOI
Transceiver Block Diagram & Interface
VCC VANA
1553
DATA
BUS
EXTERNAL
ISOLATION
TRANSFORMER
Va
(Point A)
GND
RECEIVER
SECTION
RXBUS
RXBUSB
RX
FILTER
COMPARATOR
RXB
COMPARATOR
DATA BUS
COUPLING
RXSENS
TRANSMITTER SECTION
TXBUS
TXBUSB
PREAMPLIFIER
SHAPING
NETWORK
DRIVER
PREAMPLIFIER
SHAPING
NETWORK
DRIVER
TX
INHIBITION
TXB
TXINH
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AMICSA 2008: Radiation Tests on SOI
Transceiver Key-Features
•
•
•
•
Transmitter section designed to couple with center tapped (GND) transformers according to
MIL 1553 STD
High Impedance capability on transmitter (disable control pin TXINH)
Internal consistency check on digital control signals
Shaping network
•
•
•
Receiver section compliant with MIL 1553 STD, with internally generated threshold
Outputs RX and RXB generation programmable through RXINHB and RXSENS input pins
Internal filtering on receiver input waveforms to improve S/N ratio
•
5V/3.3V compatible in/out digital interface thanks to dedicated power supply for digital
outputs
TTL and LVTTL digital inputs
CMOS or LVCMOS digital outputs (depending on digital power supply level)
Less than 10mA current consumption when not transmitting
Latch Up Immune (SOI X-FAB 1.0um technology)
Radiation Goal compliant with space missions (50Krad achieved)
•
•
•
•
•
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AMICSA 2008: Radiation Tests on SOI
Architectural Design: transmitter
Power Output Transistors
VANA
Current
limitation
sense
Transmitter logic
TX
TXB
TTL/LVTTL
discrimination
Shift level
Combinatorial
logic
Slope Control
&
Driver
Power
Stage
TXBUS
Slope Control
&
Driver
Power
Stage
TXBUSB
Input Logic comparator with
threshold derived from
power supply to avoid logic
input threshold shift due to
TID effects
Internal divers to provide the
current capability to charge
and discharge the power
output transistor gate within
the specified rise/fall times
HV p-type Power output
transistors
Single blocking diode to block the
current path towards the
power supply related with
high voltages induced from
the bus
Proposal for discussion: discuss
current limitation feature
against cross conduction
transients
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AMICSA 2008: Radiation Tests on SOI
Power Transistors Selection
To comply with the grounded center tap of the transformer (and avoiding internal charge pump)
a p-mos structure is selected for the transmitter driver section.
To comply with underground voltages at transmitter output pins, an HV structure (p-mos) is
mandatory.
However, HV structures are intrinsically weaker than 5V structures with respect to TID effects
(trapped charges) due to field oxide on drift regions.
Hence, design countermeasures to mitigate these effects have to be under taken.
Positive trapped charges in
the field oxide (300nm) may
induce inversion on pdrift
region causing a channel
stop
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AMICSA 2008: Radiation Tests on SOI
First Countermeasure: design architectural
Trade-off between open-loop and closed loop configurations show that closed loop driving concept allows to keep
electrical parameters more stable against a wide range of environmental conditions (temperature, process spread,
characteristics degradation as an effect of TID)
GATE
+4V
Gate level for out
regulation
TXBUS
-4V
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TXBUS
-4V
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AMICSA 2008: Radiation Tests on SOI
Second Countermeasure: simulation methodology
TID-degraded models have been extracted for the
most critical component in the design (p-mos HV
driving transistor): for this purpose, TID
irradiation test has been performed on basic
structures provided by the foundry.
Different TID-levels models have been built to fit the
measured electrical characteristics.
The main parameters inside the BSIM3V3 models
which govern the characteristics degradation as
an effect of TID are :
m0 (cm2/Vsec): mobility factor
nFactor : sub threshold drain current factor to take in
to account for interface states
We acted on both parameters to fit degraded models
to the measured degraded characteristics.
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AMICSA 2008: Radiation Tests on SOI
Third Countermeasure: H-type layout
Extensive use of H-type structures available
in 1.0um HV SOI CMOS process reduces
TID induced leakage.
In H-type structures, the bird’s beak regions
are not located on the low-doped well,
but just over an high doped region of
the well.
Rectangular structure
This increases the potential needed to
invert locally the well, as well the
trapped charge amount needed to
invert the channel and create the local
leaking channel.
H-type
structure
The H-type structure builds a channel-stop
for the leaking channel.
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AMICSA 2008: Radiation Tests on SOI
Receiver Architecture (Low Voltage Section)
The receiver discriminates if the
input filtered differential
waveforms are inside the
thresholds, above both
thresholds, less than both
thresholds.
RXBUS
RXBUSB
Differential
filter
+
S
i
g
n
a
l
COMP_H, COMP_L= 11
TH_H
COMP_H
-
It acts as a window comparator.
+
On the base of comparator
outputs, and depending on
input signals RXINHB and
RXSENS logic status, the
decodify to RX and RXB logic
outputs is generated.
TH_H
COMP_H, COMP_L= 01
TH_L
COMP_H, COMP_L= 00
TH_L
-
COMP_L
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AMICSA 2008: Radiation Tests on SOI
Receiver Block Diagram
Input HV section
HV levels
RXBUS
RXBUSB
ESD
Protection
Filter
&
Attenuator
Window Comparator
+
Filter
&
Attenuator
Codify
+
Common Mode
&
Thresholds generator
COMP_H
CMOS/LCMOS
Codify
RX
RXB
COMP_L
CMOS/LCMOS
Codify
RXSENSE
RXINHB
The input section of the receiver block needs to translate the input common mode from 0V
(imposed by the transformer center tap to GND) to a 0V/5V input common mode, to allow that
comparator operates correctly.
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AMICSA 2008: Radiation Tests on SOI
Radiation TID tests on the first RUN
•
Test performed up to 100 Krads using a Co60 source in 2 steps:
–
–
0 to 28 Krads
28 to 100 Krads
: 39 rads/h
: 94 rads/h
•
Use of a test structure in order to characterize
the TID influence:
•
•
•
One sample (N°11: no irradiation)
3 samples : (N°2,3,4 : power supplied)
6 samples : not power supplied.
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AMICSA 2008: Radiation Tests on SOI
Radiation TID test Results
•
Test structure
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AMICSA 2008: Radiation Tests on SOI
Radiation TID test Results
•
Output Amplitude
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AMICSA 2008: Radiation Tests on SOI
Radiation TID test Results
Rise Time
290
270
2
3
4
5
6
7
8
9
10
11 (témoin)
250
Rise time (ns)
•
230
210
190
170
150
0
20
40
60
80
100
120
Total Irradiation Dose (krads)
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AMICSA 2008: Radiation Tests on SOI
Conclusion
•
XFAB SOI 1µ technology compliant with space mission environment.
•
It is possible to take into account the radiation effects during the design and the
simulations.
•
It is possible to use a radiation structure to measure the TID in order to
compensate the radiation effects by design.
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AMICSA 2008: Radiation Tests on SOI
Wafer Photo
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