Transcript the monolithic 3d-ic

A DISRUPTOR TO THE
SEMICONDUCTOR INDUSTRY
THE MONOLITHIC 3D-IC
MonolithIC 3D Inc. Patents Pending
1
Semiconductor Industry is Facing
an
Inflection Point
Dimensional Scaling has reached Diminishing Returns
The Current 2D-IC is Facing Escalating Challenges - I
 On-chip interconnect is
 Dominating device power consumption
 Dominating device performance
 Penalizing device size and cost
Connectivity Consumes 70-80% of Total Power @ 22nm
Repeaters Consume Exponentially More Power and Area
 At 22nm, on-chip connectivity consumes
70-80% of total power
 Repeater count increases exponentially
 At 45nm, repeaters are > 50% of total
leakage
MonolithIC 3D Inc. Patents Pending
Source: IBM POWER processors
R. Puri, et al., SRC Interconnect Forum, 2006
The Current 2D-IC is Facing Escalating Challenges - II
 Lithography is




Dominating Fab cost
Dominating device cost and diminishing scaling’s benefits
Dominating device yield
Dominating IC development costs
III. Significant Advantages from Using
Same Fab, Same Design Tools
 Litho. dominates Fab. cost
 Litho. escalates Design cost
 Litho. dominates Yield loss
Lithography costs over time
III. Significant Advantages from Using
Same Fab, Same Design Tools
 Dimensional Scaling implies:
 Process R&D > $1B per node
 New Fab Equipment > $5B
 Need to re-ramp up
manufacturing and yield
 New design tools and libraries
=> High deprecation costs
Martin van den Brink -EVP & CTO, ASML
ISSCC 2013 & SemiconWest 2013
Two Types of 3D Technology
3D-TSV
Monolithic 3D
Transistors made on separate wafers
@ high temp., then thin + align + bond
Transistors made monolithically atop
wiring (@ sub-400oC for logic)
10u
m50u
m
100
nm
TSV pitch > 1um*
TSV pitch ~ 50-100nm
* [Reference: P. Franzon: Tutorial at IEEE 3D-IC Conference 2011]
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MONOLITHIC
10,000x the Vertical Connectivity of TSV
TSV
Monolithic
Layer
Thickness
~50m
~50nm
Via Diameter
~5m
~50nm
Via Pitch
~10m
~100nm
Wafer (Die) to
Wafer
Alignment
~1m
~1nm
MonolithIC 3D Inc. Patents Pending
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Only Monolithic 3D (TSV size ~0.1 µm) would
Provide an Alternative to Dimensional Scaling
*IEEE IITC11 Kim
The Monolithic 3D Challenge
Why is it not already in wide use?
 Processing on top of copper interconnects should not exceed
400oC
 How to bring mono-crystallized silicon on top at less than 400oC
 How to fabricate advanced transistors below 400oC
 Misalignment of pre-processed wafer to wafer bonding step is
~1um
 How to achieve 100nm or better connection pitch
 How to fabricate thin enough layer for inter-layer vias of ~50nm
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MonolithIC 3D – Breakthrough
3 Classes of Solutions (3 Generations of Innovation)
 RCAT (2009) – Process the high temperature on generic
structures prior to ‘smart-cut’, and finish with cold processes
– Etch & Depositions
 Gate Replacement (2010) (=Gate Last, HKMG) - Process
the high temperature on repeating structures prior to ‘smartcut’, and finish with ‘gate replacement’, cold processes –
Etch & Depositions
 Laser Annealing (2012) – Use short laser pulse to locally
heat and anneal the top layer while protecting the
interconnection layers below from the top heat
Layer Transfer (“Ion-Cut”/“Smart-Cut”)
 The Technology Behind SOI
Oxide
Hydrogen implant
Flip top layer and
of top layer
bond to bottom layer
Cleave using 400oC
anneal or sideways
mechanical force. CMP.
p- Si
Top layer
Oxide
p- Si
Oxide
Bottom layer
H
p- Si
Oxide
Oxide
H
p- Si
Oxide
Oxide
Similar process (bulk-to-bulk) used for manufacturing all
SOI wafers today
Ion-cut is Great, but will it be Affordable?
•
Until 2012: Single supplier  SOITEC. Owned basic patent on ion-cut
•
Our industry sources + calculations  $60 ion-cut cost per $1500$5000 wafer in a free market scenario (ion cut = implant, bond, anneal).
Contents:
Hydrogen implant
Cleave with anneal
SOITEC basic patent
expired Sep 2012
•
Free market scenario now
•
SiGen and Twin Creeks Technologies using ion-cut for solar
MonolithIC 3D - 3 Classes of Solutions
 RCAT – Process the high temperature on generic structures
prior to ‘smart-cut’, and finish with cold processes – Etch &
Depositions
 Gate Replacement (=Gate Last, HKMG) - Process the high
temperature on repeating structures prior to ‘smart-cut’, and
finish with ‘gate replacement’, cold processes – Etch &
Depositions
 Laser Annealing – Use short laser pulse to locally heat and
anneal the top layer while protecting the interconnection
layers below from the top heat
Donor Layer Processing
Step 1 - Implant and activate unpatterned N+ and P- layer regions in standard
donor wafer at high temp. (~900oC) before layer transfer. Oxidize (or CVD oxide)
top surface.
SiO2 Oxide layer
(~100nm) for oxide
-to-oxide bonding
with device wafer.
PN+
P-
Step 2 - Implant H+ to form cleave plane for the ion cut
PN+
P-
MonolithIC 3D Inc. Patents Pending
H+ Implant Cleave Line
in N+ or below
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Bond and Cleave: Flip Donor Wafer and Bond to
Processed Device Wafer
Cleave along
H+ implant line
using 400oC
anneal or sideways
mechanical force.
Polish with CMP.
-
Silicon
N+
<200nm)
P-
SiO2 bond
layers on base
and donor
wafers
(alignment not
an issue with
blanket wafers)
Processed Base IC
MonolithIC 3D Inc. Patents Pending
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Etch and Form Isolation and RCAT Gate
•Litho patterning with features aligned to bottom layer
•Etch shallow trench isolation (STI) and gate structures
•Deposit SiO2 in STI
•Grow gate with ALD, etc. at low temp
Gate
(<350º C oxide or high-K metal gate)
Oxide
Gate
+N
Advantage: Thinned
donor wafer is
transparent to litho,
enabling direct
alignment to device
wafer alignment marks:
no indirect alignment.
(common for
Isolation
Ox
Ox
P-
Processed Base IC
TSV 3DIC)
MonolithIC 3D Inc. Patents Pending
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Etch Contacts/Vias to Contact the RCAT
 Complete transistors, interconnect wires on ‘donor’ wafer layers
 Etch and fill connecting contacts and vias from top layer aligned to bottom
layer
‘normal’ via
+N
P-
Processed
ProcessedBase
BaseICIC
MonolithIC 3D Inc. Patents Pending
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MonolithIC 3D - 3 Classes of Solutions
 RCAT – Process the high temperature on generic structures
prior to ‘smart-cut’, and finish with cold processes – Etch &
Depositions
 Gate Replacement (=Gate Last, HKMG) - Process the high
temperature on repeating structures prior to ‘smart-cut’, and
finish with ‘gate replacement’, cold processes – Etch &
Depositions
 Laser Annealing – Use short laser pulse to locally heat and
anneal the top layer while protecting the interconnection
layers below from the top heat
Fabricate Standard Dummy Gates with Oxide
and Poly-Si; >900ºC, on Donor Wafer
NMOS
Poly
Oxide
PMOS
~700µm Donor Wafer
Silicon
MonolithIC 3D Inc. Patents Pending
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Implant Hydrogen for Cleave Plane
NMOS
PMOS
H+
~700µm Donor Wafer
Silicon
MonolithIC 3D Inc. Patents Pending
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Bond Donor Wafer to Carrier Wafer
~700µm Carrier Wafer
H+
~700µm Donor Wafer
Silicon
MonolithIC 3D Inc. Patents Pending
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Deposit Oxide, ox-ox Bond Carrier to
Base Wafer
~700µm
Carrier Wafer
Transferred
Donor Layer
STI
Oxide-oxide bond
Base Wafer
NMOS
MonolithIC 3D Inc. Patents Pending
PMOS
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Remove Carrier Wafer
Transferred
Donor Layer
Oxide-oxide bond
Base Wafer
NMOS
MonolithIC 3D Inc. Patents Pending
PMOS
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Replace Dummy Gate with Hafnium Oxide
& HK Metal Gate (at low temp.)
Note: Replacing oxide and gate result in oxide and gate that were not damaged by the H+
implant
Transferred
Donor Layer
Oxide-oxide bond
Base Wafer
NMOS
PMOS
MonolithIC 3D Inc. Patents Pending
MonolithIC 3D Inc. Patents Pending
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Add Interconnect
ILV
Transferred
Donor Layer
Oxide-oxide bond
Base Wafer
NMOS
PMOS
MonolithIC 3D Inc. Patents Pending
MonolithIC 3D Inc. Patents Pending
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Novel Alignment Scheme using
Repeating Layouts
Oxide
Landing
pad
Bottom
layer
layout
Top
layer
layout
Throughlayer
connection
 Even if misalignment occurs during bonding  repeating layouts allow correct connections.
 Above representation simplistic (high area penalty).
MonolithIC 3D Inc. Patents Pending
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Smart Alignment Scheme
Oxide
Landing
pad
Bottom
layer
layout
Top
layer
layout
MonolithIC 3D Inc. Patents Pending
Throughlayer
connection
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MonolithIC 3D - 3 Classes of Solutions
 RCAT – Process the high temperature on generic structures
prior to ‘smart-cut’, and finish with cold processes – Etch &
Depositions
 Gate Replacement (=Gate Last, HKMG) - Process the high
temperature on repeating structures prior to ‘smart-cut’, and
finish with ‘gate replacement’, cold processes – Etch &
Depositions
 Laser Annealing – Use short laser pulse to locally heat and
anneal the top layer while protecting the interconnection
layers below from the top heat (More info: Poster 7.12)
Annealing Trend with Scaling
Two Major Semiconductor Trends help
make Monolithic 3D Practical
 As we have pushed dimensional scaling:
 The volume of the transistor has scaled
Bulk µm-sized transistors
FinFet nm transistors
FDSOI &
 High temperature exposure times have trended lower
Shallower & sharper junctions, tighter
pitches, etc.
=> Much less to heat and for much shorter time
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LSA 100A – Short Pulse, Small Spot
Dwell time ~ 275µs
Activate/Anneal at High Temperature >1000C)
without Heating the Bottom Layers (<400°C)
}
>1000°C
}
MonolithIC 3D Inc. Patents Pending
<400°C
Process Window Set to Avoid Damage
Temperature variation at the 20 nm thick Si source/drain region in the upper active layer during laser annealing.
Note that the shield layers are very effective in preventing any large thermal excursions in the lower layers
Dopant Activation by Laser: IEDM13 Example
 Taiwan National Nano Device Laboratory: IEDM13-Paper #9.3
 ‘green’ laser: HIPPO 532QW Nd/YAG, 532nm wavelength, 13nS
pulse width, 25cm/s scanning speed, and 2.7mmx60µm beam size
 “Researchers from Taiwan’s National Nano Device Laboratories
avoided the use of TSVs by fabricating a monolithic sub-50-nm 3D
chip, which integrates high-speed logic and nonvolatile and SRAM
memories... The monolithic 3D architecture demonstrated high
performance – 3-ps logic circuits, 1-T 500ns nonvolatile memories
and 6T SRAMs with low noise and small footprints”
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Enabling Technology
for the Semiconductor Industry
Monolithic 3D Provides an
Attractive Path to…
Monolithic 3D
Integration with IonCut Technology
3D-CMOS: Monolithic 3D Logic Technology
LOGIC
3D-FPGA: Monolithic 3D Programmable Logic
3D-GateArray: Monolithic 3D Gate Array
3D-Repair: Yield recovery for high-density chips
Can be applied
to many market
segments
3D-DRAM: Monolithic 3D DRAM
MEMORY
3D-RRAM: Monolithic 3D RRAM
3D-Flash: Monolithic 3D Flash Memory
3D-Imagers: Monolithic 3D Image Sensor
OPTOELECTRONICS
3D-MicroDisplay: Monolithic 3D Display
3D-LED: Monolithic 3D LED
MonolithIC 3D Inc. Patents Pending
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The Monolithic 3D Advantage
II. Reduction die size and power – doubling transistor count
- Extending Moore’s law
Monolithic 3D is far more than just an alternative to 0.7x scaling !!!
III. Significant advantages from using the same fab, design tools
IV. Heterogeneous Integration
V. Multiple layers Processed Simultaneously - Huge cost reduction (Nx)
VI. Logic redundancy => 100x integration made possible
VII. Enables Modular Design
VIII. Naturally upper layers are SOI
IX. Local Interconnect above and below transistor layer
X. Re-Buffering global interconnect by upper strata
XI. Others
A. Image sensor with pixel electronics
B. Micro-display
Reduction of Die Size & Power – Doubling Transistor Count
Extending Moore’s law
 Reduction of Die Size & Power
IntSim v2.0 free open source >600 downloads



Repeater count increases exponentially with scaling
At 45nm, repeaters >50% of total leakage power of chip [IBM].
Future chip power, area could be dominated by interconnect
repeaters [Saxena P., et al. (Intel), TCAD, 2004]
IV. Heterogeneous Integration
 Logic, Memories, I/O on different strata
 Optimized process and transistors for the function
 Optimizes the number of metal layers
 Optimizes the litho. (spacers, older node)
 Low power, high speed (sequential, combinatorial)
 Different crystals – E/O
V. Multiple Layers Processed Simultaneously
- Huge Cost Reduction (Nx) –”BICS”
 Multiple thin layers can be process simultaneously,
forming transistors on multiple layers
 Cost reduction correlates with number of layers being
simultaneously processed (2, 4, 8, 16, 32, 64, 128, ...)
3D DRAM 3.3x Cost Advantage vs. 2D DRAM
Conventional stacked
capacitor DRAM
Monolithic 3D DRAM with
4 memory layers
Cell size
6F2
Since non self-aligned, 7.2F2
Density
x
3.3x
26
(with 3 stacked cap. masks)
~26
extra masks for memory layers, but no
stacked cap. masks)
Number of litho steps
MonolithIC 3D Inc. Patents Pending
VI. Logic Redundancy => 100x Integration
Made Possible
 It is well known the more we can integrate on one chip with
reasonable yield, the better the cost & performance – Moore’s Law
 Yield is the dominating criterion when to use PCB rather than on-chip
integration
Innovation Enabling ‘Wafer Scale Integration’
– 99.99% Yield with 3D Redundancy
Gene Amdahl -“Wafer
scale integration will only
work with 99.99% yield,
which won’t happen for
100 years” (Source: Wikipedia)
 Swap at logic cone granularity
 Negligible design and power penalty
 Redundant 1m above, no performance penalty
Server-Farm in a Box
Watson in a Smart Phone
…
MonolithIC 3D Inc. Patents Pending
VII. Enables Modular Design
 Platform-based design could evolve to:
 Few layers of generic functions like compute, radios, and one
layer of custom design
 Few layers of logic and memories and one layer of FPGA
 ...
VIII. Naturally Upper Layers are SOI
 SOI wafers provides many benefits with one major
drawback: cost of the blank wafer.
 In monolithic 3D – all the upper strata are naturally SOI
IX. Local Interconnect - Above and
Below Transistor Layer
 Increased complexity requires increased connectivity.
Adding more metal layer increases the challenge of
connecting upper layers to the transistor layer below.
Intel March, 2013
X. Re-Buffering Global Interconnect by
Upper Strata
 Global interconnect is done at the upper and thicker
metal layers. It would increase efficiency if these layers
could re-buffer instead of connecting to base layer using
multiple vias and blocking multiple metal tracks.
Use the layers above for re-buffering.
XI. Others
A. Image Sensor with Pixel Electronics
 With rich vertical connectivity, every pixel of an image
sensor could have its own pixel electronics underneath
MonolithIC 3D Inc. Patents Pending
XI. Others
B. Micro-display
 Use of three crystal layers to form RGB LED arrays with
drive electronics underneath
MonolithIC 3D Inc. Patents Pending