Transcript EUDET FP7 brainstorm

EUDET FP7 brainstorm
EUDET-JRA2
Jan Timmermans
My personal opinion….
• I would be in favour of waiting till next call
• Because “grand” particle physics proposal
seems to create a lot of extra overhead
and may thus become ‘unmanageable’
• On the other hand: EUVIF seems a good
way to continue EUDET
After some discussions with Ties….
Possible topics/workpackages:
• As “integration facility”: Micro electronics facility
(real synergy with other JRA’s)
• Would a ~4T magnet (of reduced size) be
possible? What size? Costs?
• Global Detector Network
• Under WP7 “Tracker prototype infrastructure”:
could that include further development of
Timepix? (and/or large pixel endplate?). Again
synergy with e.g. SLHC upgrades, see proposal
Michael Campbell @ Paris meeting
From Thomas Bergauer and
Frank Hartmann
Test structures (TS) as an
infrastructure item
IEKP Karlsruhe, HEPHY Vienna
• Common solution to quickly evaluate all necessary
sensor parameters of new sensors during
– R&D
– Full production
• Establishment of a full package
– TS layout and masks
– Description of measurement equipment
– full software, including exchange and comparison protocols
• This infrastructure item needs the involvement of
industry to build first TS prototypes
• Useful for ILC and SLHC and …
Monitoring the R&D and later the Fabrication
Process of Silicon Sensors using dedicated
Test Structures
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TS-CAP
sheet
Utilize space left on wafer for test structures.
Determine one process parameter per structure.
Allows measurement of parameters not accessible
on the main detector
Allows destructive measurements not possible on the
main sensor.
Used for CMS and was a great success
GCD
baby
CAP-TS-AC
CAP-TS-AC
diode
MOS 2
MOS 1
Test structures Measurement Setup
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Probe-card with 40 needles
contacts all pads of test
structures in parallel
Crosspoint switching box
connects Instruments to needles
Labview and GPIB used to
control instruments and
switching system
Parameters being tested:
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depletion voltage and bulk resistivity
Bulk dark current and breakthrough
voltage (up to 1100V)
Coupling capacitance CAC
Dielectric breakdown voltage
Al-, p+- and poly-Si resistivity
Flatband voltage, surface current
Inter-strip capacitance Cint
Inter-strip Resistance Rint
Test structures improvement possibilities
• Modify CMS Test Structures (TS) and the test setup in a
way that both can be used as generic tool to
characterize new silicon sensors, new wafer and sensor
producers in the future.
• Technically, this would mean:
– Minimize space of TS on wafer and adapt test setup to cope with
that changes (e.g. this implies more sensitive measurements)
– Extend TS to be able to characterize other (new) materials
(magnetic Czrochalski, n-on-p, n-on-n,…)
– Adapt TS for testing of 2nd metal routing layer and its related
isolation oxide layer