Transcript 80-Gbs 231-1 PRBS generator in STM`s 0.13 mm SiGe BiCMOS by

Low-Power Circuits for a 2.5-V,
10.7-to-86-Gb/s Serial Transmitter
in 130-nm SiGe BiCMOS
Tod Dickson
University of Toronto
June 9, 2005
Motivation
Ever-growing bandwidth demands results in higher data
rate broadband transceivers
Next generation wireline applications will exceed 80-Gb/s.
To date, serial transmitters at this data rate have not
been demonstrated.
High power consumption even an 40-Gb/s makes high
levels of integration difficult.
Reducing power consumption without sacrificing speed is
a key challenge.
T. Dickson
University of Toronto
June 24, 2005
HBT vs. MOS High-Speed Logic
BiCMOS Cascode
Lower supply voltage
High speed due to
intrinsic slew rate
Requires high supply
voltage (3.3V or more)
T. Dickson
University of Toronto
Needs higher current
for same speed
No power savings
June 24, 2005
Power reduction techniques
BiCMOS logic family
reduces supply voltage
Reduce tail current with
inductive peaking
LP =
CLDV2
3.1 IT2
10 mm
Stacked inductors
43-Gb/s latch consumes only 20mW
T. Dickson
University of Toronto
June 24, 2005
2.5-V, 10.7-to-86-Gb/s Serial Transmitter
40-GHz PLL
Output Driver
On-chip
PRBS for
BIST
8:1 MUX
T. Dickson
University of Toronto
June 24, 2005
Die Photo & Measured Results
1.5mm
1.8mm
Fabricated in 130-nm SiGe
BiCMOS w/ HBT fT = 150 GHz
T. Dickson
Measured 86-Gb/s eye diagram
• 2 x 275mVpp output swing
• < 600fs rms jitter
• 6ps rise/fall times (20%-80%)
University of Toronto
June 24, 2005
Comparison
Supply
Technology
fT/fMAX
Data Rate
130-nm CMOS
85/90 GHz
40-Gb/s (half-rate)
1.5 V
2.7 W
InP HBT
150/150 GHz
43-Gb/s (full-rate)
-3.6/ -5.2 V
3.6 W
180-nm SiGe
BiCMOS
HBT: 120/100 GHz
43-Gb/s (half-rate)
-3.6 V
1.6 W
180-nm SiGe
BiCMOS
HBT: 120/100 GHz
43-Gb/s (full-rate)
-3.6 V
2.3 W
86-Gb/s (half-rate)
2.5 V
1.36 W
130-nm SiGe
BiCMOS
MOS: 85/90 GHz
HBT: 150/150 GHz
T. Dickson
University of Toronto
June 24, 2005
Voltage
Power
Conclusions
Demonstrated the first serial transmitter above 40-Gb/s
in any semiconductor technology.
Low-power operation achieved by
employing BiCMOS high-speed logic family to reduce
supply voltage.
trading off bias current for inductive peaking.
Adding a SiGe HBT to a CMOS process can result in a
serial transmitter with twice the data rate and half the
power dissipation.
T. Dickson
University of Toronto
June 24, 2005