Transcript Welcome_files/2016 SiGe Brochure Feb 19 2016

2016 SiGe, Ge, & Related
Compounds: Materials,
Processing, and Devices
Symposium
October 2-7, 2016
Honolulu, HI
The SiGe, Ge, & Related Compounds
Symposium is part of the 2016 PRiME
Joint
International
Electrochemical
Society Meeting
Final Abstract
Submission Deadline
April 15th, 2016
The Seventh International SiGe, Ge, & Related
Compounds: Materials, Processing, and Devices
Symposium is part of the October 7-12, 226th Meeting
of the Electrochemical Society. This meeting will
provide a forum for reviewing and discussing
materials and device related aspects of SiGe, Ge, and
Related Compounds (eg SiC). There are 9 areas of
interest for the Symposium described below:
1. Heterojunction Bipolar Transistors
Device physics, process technology, modeling, reliability,
circuit applications (analog, digital, and RF to mm-wave).
2. FET Technology
SSCMOS, SiGe FET structures, SiGe HEMTs, SiGe
MODFETs, SiGe FET structures on SOI, RTD, Ge-FETs,
Low voltage, & low power
3. Optoelectronics
Detectors, Waveguides, Quantum cascade structures,
Photovoltaic
cells,
Photoluminescence,
Electroluminescence, Integration with CMOS electronics,
Ge buffers for III-V Optoelectronics on Si, monolithic
optoelectronic integrated circuits (OEICs).
4. Epitaxy
Pre-epi surface preparation of Si, SiGe and Ge; Growth
of Group IV epitaxial layers: graphene, Si, Ge, SiC, SiGe,
SiGe:C, GeSn, SiGeSn. Epitaxial growth of other
materials on Si or Ge such as III-V’s; Novel growth
techniques and precursors; Selective growth; Novel insitu doping approaches; Quantum wire/dot growth.
5. Processing
All aspects of processing including diffusion, diffusion
suppression, oxidation, strain, thermal mixing, defects, Si
and Ge intermixing, Oxidation and Nitridation, Cleaning
and etching of SiGe, Ge, and SiGeC films.
The SiGe, Ge, & Related Compounds Symposium is part of
the Fall 2016 Electrochemical Society Conference.
Registration and Hotel arrangements must be booked
through the ECS at http://www.electrochem.org
www.sigesymposium.com
6. Strain Engineering
Relaxed SiGe buffer layers, pseudomorphic SiGe,
superlattices, embedded SiGe, Ge condensation, SSOI,
SGOI substrates, global strain, local / process-induced
strain, strain characterization, strain modeling &
simulation, defects, manufacturing issues.
7. Surfaces and Interfaces
High K interface, Metal Contact, Interfacial electrical
properties and its characterization. Electro-mechanical
properties of SiGe layers, MEMs, TFTs,
8. Related Compounds
Deposition, processing, characterization and devices of
III-V and III-Nitrides, (Si)carbides, functional oxides, 2D
materials (graphene, X-ene and X-ane, h-BN, transition
metal dichalcogenides), semiconductor-on-insulator and
low-dimensional or nano structures,...
9. Emerging Applications
Nano-structured devices, quantum computing, THz
devices, electro-mechanical properties of SiGe layers,
MEMs, TFTs, amorphous SiGe layer applications.
10. Special Session: Metrology for SiGe & Related
Compounds
Nanoscale characterization of composition, strain,
defectivity, crystallinity, doping, dimensions, morphology,
band structure, mobility... of Group IV (incl. C and Sn
alloys) and III/V on Si as well as 2D materials.
Evening Workshop
A Panel of experts will discuss issues related to a topic in
SiGe, Ge, or Related Compounds.
For the latest symposium details please see the Symposium
website at: www.sigesymposium.com.
Website maintained by Gianlorenzo Masini
[email protected]
Instructions for Authors
Abstract Paper Submission
Authors must submit an ECS abstract (using the
ECS provided template) to the Electrochemical
Society Website. The ECS website will be open
for abstract submission to the SiGe, Ge, &
Related Compounds Symposium from January 12
to March 14th, 2016 for this Symposium. All
authors, invited and contributed, must submit an
ECS abstract and a Proceedings manuscript both
to the ECS website by the respective submission
deadlines.
Final Abstract Submission:
April 15th, 2016
www.electrochem.org
Proceedings Manuscript Submission
The Symposium Proceedings will be available at
the time of the Symposium and will serve as the
digest of technical papers. All regular and invited
paper authors will need to submit a full-length
manuscript to the Electrochemical Society website
www.electrochem.org. Detailed instructions and
templates for the preparation of the Manuscript
may be found at the ECS Website open for
submission May 28th. Note that the Proceedings
Manuscript
must
be
submitted
to
the
Electrochemical Society website.
Proceedings Manuscript
Submission deadline:
June 22nd, 2016,
www.electrochem.org
Organizing Committees
HBT Committee
A. Joseph, Chair (Globalfoundries, USA)
P. Chevalier (STMicroelectronics, France)
D. Knoll (IHP, Germany)
E. Preisler (Tower Jazz)
K. Washio (Tohoku University, Japan)
A. O’Neill (Univ. New Castle, UK)
R. Camillo-Castillo (Globalfoundries, USA)
G. Niu (Auburn, USA)
E. Hijzen (NXP Semiconductors, Belgium)
FET Committee
Aaron Thean, Chair (IMEC, Belgium)
Gong Xiao (National University of Singapore, Singapore)
Wilman Tsai (TSMC, USA)
Suman Datta (University of Notre Dame, USA)
Ken Uchida (Keio University, Japan)
Thomas Skotnicki (STMicroelectronics, France)
Emmanuel Augendre (CEA-Leti, France)
Peide Ye (Purdue University, USA)
Surfaces and Interfaces Committee
S. Miyazaki, Chair (Nagoya University. Japan)
S. Zaima (Nagoya University, Japan)
E. Garfunkel (Rutgers University, USA)
V. Le Thanh (CINaM/CNRS and Univ. Aix-Marseille)
A. Nishiyama (Toshiba Co., Japan)
P. C. McIntyre (Stanford University, USA)
Optoelectronics Committee
G. Masini, Chair (Luxtera, USA)
G. Capellini (University of Rome, Italy)
F. Boeuf (ST Microelectronics, France)
Y. Ishikawa (University of Tokyo, Japan)
J. Liu (Dartmouth College, USA)
Epitaxy Committee
J.M. Hartmann, Chair (LETI, France )
M. Bauer (AMAT, USA)
D. Buca (FZ Juelich, Germany)
H. Chang (AMAT, USA)
A, Hikavyy (IMEC, Belgium)
M. Sakuraba (Tohoku University, Japan)
J. Tolle (ASM, USA)
Emerging Applications Committee
M. Ostling, Chair (KTH, Sweden)
T. Krishnamohan, (Intel, USA)
S. Koester, (University of Minnesota, USA)
E. Tutuc, (University of Texas, Austin, USA)
M. Eriksson, (University of Wisconsin, USA)
D. Paul (University of Glasgow, Scotland, UK)
Processing Committee
A. Mai, Chair (IHP, TU Berlin, Germany)
C.-W. Liu (National Taiwan University, Taiwan ROC)
D. Dutartre (STMicroelectronics, France)
T. Sadoh (Kyushu University, Japan)
J.C. Sturm (Princeton University, USA)
www.sigesymposium.com
Strain Layers Committee
A. Ogura, Chair (Meiji University, Japan)
T. Irisawa (AIST, Japan)
S. Bedell, (IBM, USA)
S. Takagi (University of Tokyo, Japan)
V. Moroz (Synopsys, USA)
R. Loo (IMEC, Belgium)
Related Compounds Committee
M. Caymax, Chair (IMEC, Belgium)
Valeri Afanasiev (University of Leuven, Belgium)
Qizhi Liu ( Globalfoundries, USA)
Michael Heuken (Aixtron, Aachen, Germany)
Special Session: Metrology
A. Schulze, Chair (IMEC, Belgium)
A. Diebold (CNSE, SUNY Polytechnic institute, USA)
M. Kuhn (Intel Corp. Oregon, USA)
Evening Panel Session
K. Saraswat (Stanford, USA)
ECS Symposium Organizers
David Harame (Globalfoundries, USA)
[email protected]
Phone +1-802-769-2232
Renata Camillo-Castillo (Globalfoundries, USA)
[email protected]
Phone +1- 802 -769 -4112
J. Murota, (Tohoku Univ., Japan)
[email protected]
Tel:022-217-5548(+81-22-217-5548)