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Presentation Guide
18th International Conference on
VLSI Design Conference
Kolkata, 2005
05/18/01 V4.3
The vision: Ambient Inteligence
Devices as Appliances
On-Body
Ad-hoc Sensor Adaptive Wireless
In-Home
• Power efficiency is one cornerstone of ambient intelligence
• Flexibility and adaptability are another
The AMI processing Bestiary
• The work-horse
– Powers the fixed base network machines
– Power W Performance GB/s
• The hummingbird
– Powers the wireless base network interfaces
– Power mW Performance MB/s
• The butterfly
– The sensor network hardware
– Power µW Performance KB/s
Workhorse: Itanium® II Processor
•
•
•
•
L3 CACHE
(1.5/3 MB)
Released at 733MHz and
800MHz, now 1GHz
Three level caching system
25 million transistors in the CPU
and 300 million in the cache
(0.18µm)
421mm2 die size
The CPU running at full load
draws ~130 Watts
The clock signals and logic
total to approx 84% of the total
power usage.
Leakage power: approx. 2%.
Power delivery: Vdd=1.5V,
P=130W, P=VddI (!!)
Hummingbird: TMS320vc5471
•
•
C540
•
•
ARM7
•
Core Vdd=1.8V, I/O
Vdd=3.3V
Power (fARM=50MHz,
fDSP=100MHz) = 291 mW
– Core 126mW
– I/O 165mW
2K 16-bit 2-ported DSPARM sh-mem interface
72K for DSP, 16KB for
ARM
DMA, UART, IRDA,
Ethernet…
Charge Pump
Butterfly: Berkeley’s Daft Dust
Pad to Photodiode
CCR
Vdd
Pad
GND Power-on Reset
Pad/
LFSR
360µm
• 63 mm3
• Circuits: 0.25 µm CMOS
– digital circuits underneath ground pad
– metal shields to prevent photogenerated carriers
• Power consumption ~50µW (?)
Energy Efficiency
MOPS/mW (or MIPS/mW)
The Energy-Flexibility Tradeoff
Programmable solutions
When? Always!
Where? Everywhere!
1000
Dedicated
HW
100
10
Reconfigurable
Processor/Logic
ASIPs
DSPs
10-80 MOPS/mW
2 V DSP: 3 MOPS/mW
1
Embedded Processors
0.4 MIPS/mW
0.1
Flexibility (Coverage)
Dynamic Energy Consumption
Vdd
Vin
Vout
CL
Energy/transition = CL * VDD2 * P01
Leakage Energy
Vout
OFF
Gate leakage
Drain junction
leakage
Sub-threshold
current
Independent of switching
Leakage Current Mechanisms
I1 p-n junction reverse
bias current
I7 I8
Polysilicon
Gate
Gate oxide
Source
Drain
n+
n+
I2 I3 I6
I5
I4
p substrate
Bulk (Body)
I1
I2 weak inversion
(subthreshold)
I3 DIBL
I4 GIDL
I5 punchthrough
I6 narrow width effect
I7 gate oxide tunneling
I8 hot carrier injection
Power is a Limiter
100000
Power (Watts)
10000
1000
transition
from NMOS
to CMOS
18KW
5KW
1.5KW
500W
Pentium®
P6
286
486
10
8086
386
8080
8008 8085
1
4004
100
0.1
1971 1974 1978 1985 1992 2000 2004 2008
Power delivery and dissipation will be prohibitive !
Source: Borkar, De Intel
Power Density will Increase
Sun’s
Surface
Power Density (W/cm2)
10000
Rocket
1000
Nuclear
Reactor
100
10
Nozzle
8086
Hot Plate
P6
8008
Pentium®
8085
4004
286 386
486
8080
1
1970
1980
1990
2000
2010
Power densities too high to keep junctions at low temps
Source: Borkar, De Intel
Source-Drain Leakage Power
Year
1999
2002
2005
2008
2011
2014
Feature size (nm)
180
130
100
70
50
35
Logic trans/Chip (M)
15
60
235
925
3,650
14,400
Power supply Vdd (V)
1.8
1.5
1.2
0.9
0.7
0.6
Threshold VT (V)
0.5
0.4
0.4
0.35
0.3
0.25
Drain leakage increases as VT decreases to meet frequency
demands leading to excessive leakage power.
Drain Leakage Power
100,000
Ioff (na/nm)
50nm
10,000
70nm
100nm
1,000
100
130nm
180nm
10
30
40
50
60
70
Temp (C)
80
90
100
50%
40%
1.7KW
30%
20%
8KW
400W
88W
12W
10%
0%
2000
2002
2004
2006
2008
Source: Borkar, De Intel
CMOS Energy and Power
E = CL VDD2 P01 + tsc VDD Ipeak P0/11/0 + VDD Ileak/f
f = P * fclock
P=
CL VDD2 f + tscVDD Ipeak f
Dynamic power
(~80% today and
decreasing
relatively)
Short-circuit power
(~5% today and
decreasing
absolutely)
+
VDD Ileak
Leakage power
(~15% today
and increasing)
Where Does the Power Go?
Power profile (dynamic power) of a 4-way superscalar
microprocessor
issue queues
reg files
icache/itlb
dcache/dtlb
L2 cache
FUs
result buses
clock
other
Bottom line: power needs to be reduced across-the-board
Power versus Energy
Power is height of curve
Watts
Lower power design could simply be slower
Approach 1
Approach 2
Watts
time
Energy is area under curve
Two approaches require the same energy
Approach 1
Approach 2
time
PDP and EDP
Power-delay product
(PDP) = Pav * tp = (CLVDD2)/2
PDP is the average energy consumed per switching event
(EDP) = PDP * tp = Pav * tp2
EDP is the average energy
consumed multiplied by the
computation time required
takes into account that one can
trade increased delay for lower
energy/operation (e.g., via supply
voltage scaling that increases delay,
but decreases energy consumption)
15
Energy-Delay (normalized)
Energy-delay product
energy-delay
10
energy
5
0
0.5
delay
1
1.5
VDD (V)
2
2.5
Cost metrics
POWER
P(t)=I(t)V(t)
Average power T-1TPdt
Peak power MaxT(P)
PERFORMANCE
Latency vs. throughput
Worst Case vs. Average Case
~T-1
Never considered in isolation
Performance constraints
Compound Cost metric
Min{P}
S.t. T<Tmax
C=PTα
α>1
Computational tile
• An IC is a small tile of silicon which performs
computationa computational tile
• Computational tiles are programmable
– Webster: Program=“a sequence of coded
instructions that can be inserted into a
mechanism”
• Computational tiles burn power
• Once programmed, computational tiles
produce performance
Dual-Mode CT model
Tile
Off
On
• The tile operates in two states
– ON: executes a task (N inst/sec), burns power POn
– OFF: functionally idle, burns power Poff
• Power minimization = minimize number of executed instruction =
maximize slack
t
The shortest executing program achieves minimum power
Is Dual-Mode CT realistic?
• Many simple microcontrollers
– Power consumption is roughly
independend from the executed instruction
– Negligible time (given low fclk) to transition
from active to sleep and vice-versa
• E.g. 8-bit microcontroller EM6680 (Swatch)
– Pactive=6µW (@1.5V, 32KHz), Psleep=0.5µW
Power minimization: minimize the expected
number of executed instructions
Implementing shutdown
• Dynamic power should be eliminated
– Main technique: clock gating
• Static power should be eliminated
– Various techniques:
• Sleep input vector assignment
• Supply cutoff
• Threshold control
Clock Gating
Most popular method for power reduction of clock signals
and functional units
R
Functional
e
unit
g
clock
disable
Gated Clock Distribution
If the paths are perfectly balanced, clock skew is zero
Can insert clock gating at
multiple levels in clock tree
Can shut off entire subtree
if all gating conditions are
satisfied
Clock
disable
clock
H-Tree Clock Network
gated
clock
Higher recovery overhead
Clock Gating Levels
• Fine-grain
– E.g., portions of the pipeline register are disabled
depending on whether the information they hold is
used in the next stages
• Medium-grain
– E.g., disable cache precharging during cache miss
• Coarse-grain
– E.g., eliminate switching of the clock’s main driver
Example: clock gating in ARM cores
Reducing Leakage
• Static power in “off-state” is a serious concern
in nanometer technologies
• Techniques tradeoff leakage reduction for
ease of recovery from shutdown
– Most of the techniques have non-negligible
recovery cost
– Dual-mode CT model does not hold!
I. Input Vector Control
• Transistor Stack Effect: the leakage reduction
effect in a transistor stack when more than
one transistor is turned off.
• Leakage is dependent on Vds, Vgs and Vt
VDD
B
01
10
A
M1
G
D
VM
S
B
M2
GND
II. Adapting Threshold Voltage
• Increasing the Threshold Voltage
– In Dynamic Threshold MOS (DTMOS), the body
and gate of each transistor are tied together such
that whenever the device is off, low leakage is
achieved while when the device is on, higher
current drives are possible.
– The Standby Power Reduction (SPR) or Variable
Threshold CMOS (VTCMOS) technique raises VTH
during standby mode by making the substrate
voltage either higher than Vdd (P devices) or lower
than ground (N devices).
II. Body Bias Control (BBC)
• Sub-threshold current as a function of the
body bias voltage
Body Bias Control
• Power overhead is incurred for charging substrate
when entering sleep mode
Echsubs (Vch ) Csubs (Vch ) (Csub / A A)
2
2
• Required response time can be obtained by tuning
charge-pump driving current and frequency.
III. Supply Gating
• Gating the Power Supply
– The power supply is shut down so that idle
units do not consume leakage power
– This can be done using “sleep” transistors
(MTCMOS).
• If there is intention to provide support for
Dynamic Voltage Scaling (DVS):
– Switching regulators
– On-chip voltage generators (PLL)
Power Supply Gating - Global
• The performance penalty is represented by
the time required by the PLL to reacquire lock
tacq
10k f
2 N 1 100
kc
kl
2
2f ext
N (2 ) f ext
• Value of tacq is 400ns, for the base PLL
design.
Power Supply Gating - Local
• The buffer design used is commonly found in
Voltage Down Converters (VDCs) for memory
chip applications.
– Driver is sized to meet the corresponding
unit's average current requirements during
normal operation.
Vdd
Added
Circuitry
driver
Vin
enable
Vout
Vbias
gnd
Summary of Schemes
Leakage
Reduction%
Performance
Penalty
Area
Overhead %
Dynamic Power
Overhead
Intended
Granularity
IVC
75.8
< 1 clk
cycle
3.84
Very Low
Fine Med.
BBC
64.1
<150ns
35.26
Low
Med.Large
PSG -loc
100
179.3ns
6.78
Moderate
Med.
PSG -glo
100
< 400ns
92.38
Very High
Large
Method
Multi-Mode CT model
Off
•
Max speed
The tile operates in S states
–
–
•
Very slow
Spanning the power performance tradeoff
Variable fclk and, optionally, variable Vdd (better!)
Power minimization
t
1. Minimize number of executed instruction = maximize
slack
The shortest
executing program achieves minimum power
Is Multi-Mode CT realistic?
• Variable speed microcontrollers
– Power consumption is roughly independend from the
executed instruction
– Negligible time (given low fclk) to transition from one fclk
to another (tricky but doable… if fclk is not super-fast)
• Key issue: time resolution of mode transitions
– Maximum dV/dt during voltage transitions is limited
What is different w.r.t. performance optimization?
Power=Performance optimization
for Multi-mode CTs
• Always push for maximum slack even when
performance bound is met
– Slack is good for power recovery
• Accept extra computation if you can increase
average slack
– Run time detection of fast computations
Prob
Slowdown region!
f1
f2
f3
f4
f5
f6
Exec time
Introduction to DVS
Variable-voltage processors
• Discrete VS
– 3 to 4 voltages
– More frequencies
• Transition penalties
– milliseconds
– Dominated by
supply voltage
transient
From Intel’s Web Site
Exploiting Variable Supply
• Supply voltage can be dynamically changed during
system operation
– Cubic power savings
– Circuit slowdown
• Just-in-time computation
– Stretch execution time up to the max tolerable
Power
Fixed voltage + Shutdown
Variable voltage
Available time
Variable-supply Architectures
• High-efficiency adjustable DC-DC converter
• Adjustable synchronization
– Variable-frequency clock generator [Chandrakasan96]
– Self-timed circuits [Nielsen94]
• Example: Power-pro architecture [Ishiara98], Crusoe
embedded processor [Transmeta00]
Prog
ROM
Dec
Power
Manager
CPU
Data RAM
DC-DC
& VCO
Vdd
CLK
Basic problem formulation
• Given a task, with known WCET and deadline d
Vddthe
(S) processor that runs it
– Find the optimal voltage for
WCET sl energy without violating d)
(minimize
Vmax
d
VT
ST=(WCET+sl)/WCET
1
ST is the “stretching factor”
ST
S
Accounting for limited (f,Vdd)
resolution
• Frequency interpolation
Task Energy
– Given a task with N operations
– Compute optimum (fideal,Vdd,ideal)
– Find the two closest available
frequencies
The task executes
all its N cycles at
V1:
E = NEV1
normalized values
• fL<fideal<fH
– Run for X o at fL and (N-X) at fH
N/fideal= X/fL + (N-X)/fH
1
Sample characteristics for Task Execution Time
a three supply voltage
processor
0,5
0
Cycle
Cycle
Energy Length
V1
V2
V3
The task executes
partly at V2 and
partly at V3:
E = xEV2 + (Nx)EV3
Non-RT (interactive) DVS
Many problems with RT DVS in practice
No
task characterization No C, no D
Dynamic task sets
Unknown dependencies
Not even a clear definition of task
–
E.g. MP3play is a single application
In most cases, RT DVS is simply not a
realistic formulation
Non-RT DVS: design issues
• When to take speed setting decisions
– Slotted time (interval schedulers) vs. taskbased vs. event triggered
• How to compute workload
– Processor utilization is a good metric?
• How to estimate performance constraints?
• What speed is the right one?
A basic approach
[Grunwald01] Experiments on PDA
Interval scheduler
PM decisions at fixed time intervals
Predict utilization
Set frequency
Details
•
Speed setting decisions every RT clock interrupt (10ms time quantum)
– Overhead in execution time only 0.6%
•
Measure utilization U by looking at cycles spent in idle process during time
quantum (usually 0 or 100%)
– Weighted average AVGN: Wt=(NWt-1+Ut-1)/(N+1)
– Sliding window average
– PAST (only previous frame)
Adjust CLK speed to maximize utilization:
Clock speed
•
– PEG (min-max), ONE, DOUBLE
– With or without hysteresis
time
AVS
AVS II
AVS
AVS
Modifying applications
•
Idea: two samples are buffered and
their work loads are averaged
– Averaged workload is then used
as the effective workload to drive
the power supply
•
A pingpong buffering scheme
– Data samples In +2, In +3
are being buffered while
In, In +1 are being
processed.
Impact of buffering
Compilers can help!
A=foo()
if A > 0 then
Flong(A)
else
Fshort(A)
Compiler inserts
voltage switching
points based on
control/dataflow
analysis
CKPT
A<=0
A>0
T=K/f
T=K/f
T=K/f
f2=50MHz
f1=100MHz
Multi-Mode CT model with overhead
•
The tile operates in S states
–
–
•
Variable fclk and, optionally, variable Vdd (better!)
Delay and power overhead for state transitions
Power minimization
t
1. Maximize slack
2. Chose best state considering transition overhead
The origins: multiple sleep states
Example: STRONGARM SA1100
400mW
• RUN: operational
• IDLE: a sw routine may
stop the CPU when not
in use, while monitoring
interrupts
• SLEEP: Shutdown of
on-chip activity
RUN
10us
90us
160ms
10us
90us
IDLE
SLEEP
50mW
160uW
Low Power DRAMs
• Conventional DRAMs refresh all rows with a
fixed single time interval
– read/write stalled while refreshing
– refresh period -> tref
– DRAM power = k * (#read/writes + #ref)
• We have to worry about optimizing refresh
operations
Optimizing Refresh
• Selective refresh architecture (SRA)
– add a valid bit to each memory row, and only
refresh rows with valid bit set
– reduces refresh 5% to 80%
• Variable refresh architecture (VRA)
– data retention time of each cell is different
– add a refresh period table and refresh counter
to each row and refresh with the appropriate
period to each row
– reduces refresh about 75%
[Ohsawa, 1995]
Cached DRAM
• Integrates a cache on a DRAM chip that
optimizes cost/performance/energy
• Relies on the fact that SRAM accesses are
faster then DRAM accesses
• Different from traditional on-processor caches
because of the width of transfer
Banked DRAM Architecture
CPU +
Caches
0
N
Bank
N-1
2N
Bank
2N-1
3N
Bank
3N-1
Bank
4N-1
DRAM Operating Modes
3.75 nJ
Active
2 cycles
30 cycles
Standby
Napping
0.83 nJ
0.32nJ
9000 cycles
Power-Down
0.005 nJ
Rambus DRAM (RDRAM)
• High bandwidth (>1.5 GB/sec)
• Each RDRAM module can be activated/deactivated
independently
• Read/write can occur only in the active mode
• Three low-power operating modes:
– Standby, Nap, Power-Down
– In general, the lowest power modes have the longest
operational latencies (e.g., the relative power levels of
power-down and standby states have a ratio of about 1:100,
and the relative access latencies to read data have a ratio of
about 5000:1)
– Both high speed and low power operating modes serving the
needs of both line-operated and portable products
Rambus DRAM (RDRAM)
Power
Blocks disabled
Mode
Standby
COL muxes disabled
Napping
COL and ROW muxes
disabled
Power-Down
COL and ROW muxes and
clock synchronization
disabled
The opportunity
Reduce power according to workloads
device states
shut down
busy
busy
idle
working
power states
wake up
Tsd
Tbs
Tsd: shutdown delay
Tbs: time before shutdown
sleeping
Twu
working
Tbw
Twu: wakeup delay
Tbw: time before wakeup
Shutdown only during long idle time
The challenge
Is an idle period long enough
for shutdown (Tbe)?
Predicting the future!
Adaptive Stochastic Models
Sliding Window (SW) [Chung DATE 99]
B
I
………... B
B
I
I
B
I
I
B
B
B
time
Interpolating pre-computed optimization
tables to determine power states
using sliding windows to adapt for non-stationarity
Performance of predictors
Algorithm
off-line
Semi-Markov
Sliding Window
Device-Specific Timeout
Learning Tree
Exponential Average
always on
P
0.33
0.40
0.43
0.44
0.46
0.50
0.95
Nsd
250
326
191
323
437
623
-
Nwd
0
76
28
64
217
427
-
P : average power
Nsd: number of shutdowns
Nwd : wrong shutdowns (actually waste energy)
[Yung D&T 2001]
Can I do better than that?
Improve workload information
Application-aware DPM!
OS-based DPM
user
requesters
OS
scheduler
program
program
program
DPM API
power manager
Interaction with scheduler
device
Interaction with OS
• Concurrent processes
– Created, executed, and terminated
– Have different device utilization
– Generate requests only when running
(occupy CPU)
• Power manager is notified when processes
change state
• Processes ask for “service levels” to the PM
Can I do better than that?
Application-level DPM
Shaping the workload!
Task Scheduling
Rearrange task execution to cluster
similar utilization and idle periods
t1
t2
t3
1
2
1
2
1
idle
t1
t2
t3
3
1
3
2
T
time
idle
2
3
1
2
1
3
2
idle
T: time quantum
Compilers can help!
i = 1;
while i <= N {
read chunk[i] of file;
compute on chunk[i];
i = i+1;
}
Code transformation clusters disk accesses
available = how_much_memory();
numchunks = available/sizeof(chunks);
compute_time = appfunc(numchunks);
i = 1;
while i <= N {
read chunk[i…i+numchunks] of file;
next_R(compute_time);
compute on chunk[i…i+numchunks];
i = i+numchunks;
}
Impact on workload
An Unmodified Application (UM)
CPU
Disk
CPU
idle
active
idle
active
Disk
active
idle
active
idle
Transformed Application:
Better clustering & opportunity for latency
Elimination by early re-activation
Leakage Energy Management
E1, P1
IALU0
IALU1
MULT
FPALU
BR
LD/ST
Apply run-time leakage
control
Compiler-Directed Leakage Mgmt.
• Input vector control can benefit when
El/Ed
1 / [ k – r - r (k-1) ]
where k is the slack duration in cycles
r is the leakage energy reduction “factor”
El = p Ed
Multiple Tiles: the Tileboard model
•
System is viewed as a set of tiles
–
–
•
Tiles can be heterogeneous (e.g. CPU & Memory)
Modes can be different (e.g. no DVS for DRAMS)
Now, the problems gets really complicated
Morphable memory system
• Memory hierarchy can adapt to worload
– Statically (compiler controlled)
– Dynamically (OS controlled)
– Sinergistically
• Can be applied to multiple memory levels
– Low levels: cache vs. scratchpad
– High levels: DRAM shutdown
PE
B1
B2
B3
L1
B1
B2
L2
B1
B2
L3
SoC Architecture evolution
IO
IO
IO
COPR
COPR
NOC
SOCBUS
CPU
MEM
MEM
NOC
MEM
MEM
• From single-master CPU to MPSoC
• From bus-based interconnect to NoC
• Emphasize reuse, flexibility
A distributed system on a single chip!
Power Design Space (Processor)
Constant
Variable
Throughput/Latency Throughput/Latency
Design Time
Active
Logic design
(Dynamic)
Trans sizing
[C V2 f]
Multiple VDD’s
Standby
(Leakage)
[V Ioff]
Sleep Mode
Run Time
DFS
Clock gating
DVS
DTM
Stack effect
Sleep trans
Multiple VT’s
Multi-VDD
Multiple tox’s
Variable VT
Input control
Variable VT
Power Design Space (Memory)
SRAMs
Active
Partitioned caches
(Dynamic)
Way prediction
[C V2 f]
Filter caches
Standby
Higher VT’s
(Leakage)
Gated-GND or VDD
[V Ioff]
Drowsy caches
eDRAMS
Mode control
Gated-VDD
Power Design Space (Interconnect)
Shared Bus
Crossbar
DVS
Signal encoding
Active
(Dynamic)
[C V2 f]
Differential
signaling
Signal
encoding
Bus multiplexing
Logic design
Code compression
Layout
Error coding
Standby
(Leakage)
[V Ioff]
Drowsy buffers
Variable VT
NoC
Gated-VDD
DLS
Routing
alg’s
Current vs.
voltage
mode
Routing
alg’s
CV mode
Power optimization
• Compile-time control (no HW monitors)
– Analysis step reveals low register pressure
insert partial shutdown RF instruction
– If non-critical FP operation scale down Vdd for
the FPUs
– If FPU soon needed pre-wakeup (hide latency)
• Run-time control (requires HW probes)
– Limit speculation if branch prediction inaccurate
(partially disable IQ)
– Disable execution units if unused
• Sinergistic strategies are possible
– Compiler “hints”, OS decides
Dynamically manageable CPU
Integer
IQ
voltage and
frequency
Fetch
bpred
Memory
fetch queue
fetch
decode
IU
rename
dispatch
LSQ
Integer
reg
file
L2
Unified
L1
Dcache Cache
voltage and
frequency
L1
Icache
voltage and
frequency
High-performance processor
divided in many controllable tiles
Floating Pt
FPQ
voltage and
frequency
FPU
flt pt
reg
file
Energy Savings and Performance
Cost
Highly controllable tiles
• Multiple voltage distribution grids
• Multiple clocks
– No global reference
• Multiple thresholds
– Leakage control
• Dynamically adjustable
– Clock frequencies
– Device thresholds
– Voltage supplies
[IBM ICCAD02]
NOC
NOC
Vdd1 Vdd2 Vdd3
Voltage island DPM
• Decisions on speed, power supply, shutdown mode
can be taken on a voltage-island basis
– A local power manager controls mode of
operations
• Transition costs are reduced, but not nullified
– Transitions have a penalty
– Useless transitions should be avoided
• Island granularity cannot be arbitrarily low
– Design-time clustering
– Accounting for inter-island communication
overhead
Centralized DPM
• Single power manager for the entire SOC
• Advantages
– Global system knowledge
– Similar to “traditional” DPM
NO
C
• Disadvantages
– Information collection bottleneck
– Command distribution bottleneck
– Policy complexity explosion
Viable as a transition solution: not scalable
NO
C
Distributed DPM
• A power manager for each component
• Advantages
– Highly scalable
– No communication overhead
NO
• Disadvantages
C
– Lacks of global information
NO
C
– Poor workload knowledge
– Doesn’t exploit high bandwidth on-chip
communication channels
Viable and scalable, but not very aggressive
Message-passing DPM
• Distributed PMs send messages on the NOC
• Advantages
– Scalable with the NoC
– Complexity is tunable
– Has global workload info
NO
C
NO
C
• Disadvantages
– More hardware overhead than distributed
– Added traffic (and power) for messages
Viable and scalable, but not explored yet
Many degrees of freedom...
Putting it all together
Infrastructure work!
Closed-loop control
Power
Workload
System
(plant)
Busy/Idle
process info
Performance
PM commands
scheduling” suggestions”
Power manager
(controller)
• Stabilizes the system
• Reduces sensitivity to “modeling noise”
• Challenge: high quality power/performance sampling
Conclusion
• DPM is a rich research field
– We have finally broken the ice: many
techniques are showing promise
– IC technology is coming this way
• The reinassance?
– We need infrastructure
– We need convincing paths to market