Transcript Technology CAD: Opportunities and Impact

NSF Berkeley site visit March 2, 1998
Technology CAD: Opportunities and Impact
Andrew Neureuther
• Overview of Technology CAD (TCAD)
• Electron Interactions
• TEMPEST Optical Scattering
• Lithographic Materials
Overview of Technology CAD (TCAD)
• TCAD simulates process and device issues in
Integrated Circuit technology
• Simulation has become 50,000,000 times cheaper
relative to experiment since 1975
• Yet demanding applications - predictive 3D - require
100 Tops, 20 G Byte disk storage, 10 runs/month
Goal: Move from
“Yesterday’s technology simulated tomorrow”
To
“Tomorrow’s technology simulated Yesterday”
Examples: Electron-Beam Lithography
• Point Focus
Examples: Electron-Beam Lithography
• Masked beam
Examples: Electron-Beam Lithography
• Performance data
Examples: Electron-Beam Lithography
• Electron interactions in uA Beams limit throughput by
producing random scattering which is not understood
and cannot be compensated by refocusing.
• Computational status
– 1 uA beams take a day and 30 uA take 900 days
– Fast Multipole Acceleration (FMA) promises nearly linear
CPU with beam current and is suitable for parallelization
• Computational system needs
– 300K electrons, 100 Tops, 2 G memory, 20 G Bytes storage
– 10 runs/mo, system muli-views, trace-back of trajectories
Examples: Scattering in Optical Lithography
• Mask Geometry
Examples: Scattering in Optical Lithography
• OPC effect
Examples: Scattering in Optical Lithography
• Disk head SEM
Examples: Scattering in Optical Lithography
• WEB interface
Examples: Scattering in Optical Lithography
• Unwanted light scattering in optical lithography and
inspection limits performance and requires careful
design of recording materials, masks, wafer
topography, alignment and inspection.
• Computational status
– Pushing the 1000 l3 EM barrier
– FDTD MEMORY scales as volume and CPU scales as volume 4/3
• Computational system needs
– 160M nodes, 100 Tops, 10 G memory, 20 G bytes storage,
10 runs/mo, 100 runs/mo for 4x smaller problems
– Fly through visualization, web I/O
Examples: Image recording materials issues
• Silylation
Examples: Image recording materials issues
• Recording Materials with chemical amplification
show a 20x improvement in sensitivity but suffer from
– reaction, state dependent diffusion (type II), moving
boundaries, suppression of reaction rates by local stress
• Computational status (2D)
– Extremely stiff, 6 variables, 500 nodes
– Numerical Acceleration 50X
• Computational system needs (3D)
– Parallelized LU to get to 3D effects
– 100 Tops, 1 G memory, 20 G Bytes storage, 10 runs/month,
100 runs/month for 2D 1 Tops
Technology CAD: Opportunities and Impact
• Lithography TCAD is an area where
computational simulation is resulting in better
engineering.
• Increases in performance and programming ease
will continue to advance the scale of the
engineering effort.
• Multiple clusters of processors with high speed
communication, parallel algorithms, performance
analysis tools, and visualization are needed for for
both quick turn around and large (100 Tops)
problems.
Visualization: Capabilities
Tools
Displays
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Interoperability with
simulator
Data management
Filters
Agent
Views
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Simultaneous multiviews of system
Dynamic monitoring
Interactive fly through
Local 108 pixels/sec
Network 106
Web 104