A Look at Chapter 4: Circuit Characterization and

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Transcript A Look at Chapter 4: Circuit Characterization and

A Look at Chapter 4: Circuit Characterization
and Performance Estimation
• Knowing the source of delays in
CMOS gates and being able to
estimate them efficiently
eliminates trial and error approach
and saves time.
• In this chapter a back of the
envelop approach is presented.
• The transistor is treated as a
switch in series with a resistor
(refer to page 104 of the course
textbook).
• As a basis the inverter is designed
to provide symmetric switching.
• This is achieved by sizing the ptype and n-type transistors so that
they switch at the same rate.
• Double/triple the width of the ptype device to get Rn = Rp.
• Increasing the width of the
devices by a factor k decreases the
resistance by k while the
capacitance increases.
• A three input NAND gate
designed for worst case effective
rise and fall times has the p-type
devices’ widths doubled and those
of the n-type devices tripplicated.
The Gate and Diffusion Capacitances
• For n-type devices designed for
effective rise and fall time and
stacked (placed in series) increase
each device’s width by k, where k
is the number of devices in the
series chain.
• For the pMOS the stack of
transistors must each be increased
by 2k where k is the number of
transistors in the stack.
• This knowledge allows you to
estimate capacitances. Increasing
the device width by k increases
the capacitance by a factor k.
• Identifying the input and intrinsic
parasitic capacitances of this gate.
VDD
2C
2C
2C
2C
2C
2C
3C
3C
3C
3C
3C
3C
Identifying the Parasitic Capacitances
• For the gate shown, please
determine the p- and n-type
transistor widths based on the
capacitance values shown.
• Provide an equivalent circuit
showing the lumped capacitances
(this is the example on page 161
of the course text).
• Capacitances for the Ground and
VDD nodes have been excluded
from the picture, why?
• Provide the time constant or
propagation delay () for this gate
• The Elmore Delay Model is a first
order delay approximation.
• If we view ON transistors as
resistors we can represent a circuit
as an RC ladder.
R3
Vin
RN
Vout
R1
R2
C1
C2
C3
CN
• The simple RC ladder network
with one branch.
N
j
j 1
k 1
 DN   C j  Rk
The Elmore Delay Model
• Note that the capacitances are
summed over all N while the
resistors sum only up to the node
of interest.
• If we assume a uniform RC ladder
network consisting of identical
elements R/N and C/N then the
Elmore delay from input to the
output becomes:
j
N
 C  R  C  R  N N  1 
 N  1
 DN        
  RC

2
 N  N 

 2N 
j 1  N  k 1 N
• We have already seen this
equation and agreed that for N
very large in a distributed RC
model the previous expression
reduces to   RC for N  
2
• If we consider a general RC
network:
DN
– With no resistor loops in the
circuit,
– With all capacitors in the RC
network connected between the
node and ground and,
– That there is a unique resistive
path from the input node to any
other node in the cirrcuit.
The Elmore Delay Model (revisited)
• There is a unique resistive path
from the input node to any other
node in the circuit.
• Let P  P  P denote the portion of
the path between the input and
the node i, which is common to
the path between the input and
node j.
• If the input signal is a step pulse
at time t=0, the Elmore delay at
node i of the RC three is given by
the expression:    C  R
• Consider node 7 on the RC tree
shown and compute the delay
from input to the node of interest.
ij
i
j
N
Di
• Let Pi denote the unique path
from the input node to the node I,
where i=1, 2, 3, ….N.
• Refer to the lecture notes for an
alternative representation.
j 1
j
for all kPij
 D7  R1C1  R1C2  R1C3  R1C4  R1C5
k
 R1  R6 C6  R1  R6  R7 C7  R1  R6  R7 C8
The Elmore Delay Model (revisited)
• Note that R2, R3, R4, R5 and R8
are not in the common path from
input node to node of interest.
• These resistors are thus excluded
from the expression as per the
formula and we still ask WHY?
• They surely would influence the
delay, but it remember this is a
first order approximation.
• The voltage drops across these
resistors is not of paramount
importance to the evaluation of
the delay at node 7, but these
node’s capacitances are.
• If you drop a significant amount
of voltage across R3 for example
that works in your favor as you
might not have enough charge to
effect any changes on C3. On the
other hand if the resistance R3 is
small the voltage drop is small as
well implying that you will need
to spend time
charging/discharging capacitance
C3.
• Including C3 becomes your worst
case scenario and we thus have to
include only the resistances in the
common path.
The Linear Delay Model
•
•
•
The Elmore delay allows us to view a
circuit as an RC network and
approximate delays.
Another approach is that of using the
logical effort.
Here your primary concern would be
to understand the terms
–
–
–
–
•
•
•
propagation delay d
stage effort f
logical effort g
electrical effort h (fan-out)
These parameters describe activity for
a single stage assuming that drive
current is equivalent to that of a unit
inverter.
•
We said the logical effort g of a 2input XOR (XNOR) is 4 and the
struggle is to show how this value is
obtained.
Consider input A_bar (inverse of A),
it drives both a p- and an n-type
device. If we assume that we have a
circuit (inverter) to generate A_bar
then we have to compute G= gi for
this case. Try determining that the
logical effort for the XOR/XNOR is
indeed 4 given this information.
Understand how to estimate delays
using both the Elmore delay model
and the linear model.
Power Dissipation
• Knowledge of the critical path
delays allows you to estimate the
frequency at which your system
can operate.
• Knowing the frequency could
enable you to estimate dynamic
power.
• We must know the three
components of power, what
causes them, how they are
evaluated and how they can be
minimized.
• The implications of technology
scaling on power.