Transcript calvo_daniela_rd09

Hybrid pixel detector in the PANDA experiment
D. Calvo, S. Coli, P. De Remigis, G. Giraudo,
T. Kugathasan, G. Mazza, A. Rivetti, R. Wheadon
(INFN-Torino)
in the PANDA Collaboration
RD09 – 9° International Conference on Large Scale Applications
and Radiation Hardness of Semiconductor Detectors
Firenze, 30 September – 2 October 2009
Overview
• Introduction – the MVD in PANDA
• Custom hybrid pixel detector
• detector layout and cooling system
• epitaxial silicon devices - results
• pixel readout prototype - results
• Conclusion
D. Calvo
Facility for Antiproton and Ion Research
SIS 100/300
Proton LINAC
SIS 18
Existing
UNILAC
FRS
New
ESR HESR
PANDA
CR
CBM
Super FRS
NUSTAR
RESRNESR FLAIR
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


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Nearly 4p solid angle
High rate capabilities (2·107 annihilations /s)
Continuous readout and Efficient event selection
Moment resolution (1%)
Vertex info for D, K0s, L (ct = 317 mm for D+ -)


good tracking
Good PID (g, e, m, p, k, p) with Cherenkov, tof, dE/dx
Micro-Vertex-Detector requirements
secondary
vertex
Beam pipe
p
p
0.1 mm
•
Good spatial resolution in r-phi
– Momentum measurement of
pions from D* decays
•
Good spatial resolution specially in z
– Vertexing, D-tagging
•
Good time resolution
– ≤ 10 ns
with 2·107 ann/s
•
Triggerless readout
•
Energy loss measurement
– dE/dx for PID

Low material budget
– low momentum of particles
(from some hundreds of MeV/c)
(<1% X0 for each layer)
•
Radiation hardness (~4·1013 n 1MeV eq /cm2 )
(half year data taking, 15 GeV/c antip-p)
– Different radiation load
Primary
vertex
MVD layout
30 cm
40 cm
Custom Pixel Detector:
Micro Vertex Detector
4 barrels
Inner layers: hybrid pixels
Outer layers: double sided strips
and 6 forward disks
4 disks: hybrid pixels
2 disks: pixel and strips mixed
Hybrid pixel made by thin epitaxial sensors
and readout with130 nm CMOS technology
100 mm x 100 mm pixel sizes;
~ 850 FE readout chip (12760 pixels);
continuous data transmission without trigger
max. chip data rate : ~ 0.8 Gb/s (40 bit/pixel)
energy loss measurement: time over
threshold;
dynamic range: 100 fC
Hybrid pixel detector layout
D. Calvo
Assembly layout on the disks
Assembly scheme
Power cable
2-readout chip module
Data cable
Controller chip 0805 bias filter
capacitor
• Controller chips serve two
or three ToPiX readout chips
Possibility of daisy-chaining controllers
to save on cables (where data rates allow)
Keeping cables out of active region
means that some modules may require
two designs according to which end the
cables have to be connected
Layout of forward disks
0603 supply filter
capacitors
Sensor
ToPiX readout chips
Multilayer bus structure
6-readoutchip module
For outer layer of barrel would need to daisy-chain
D. Calvo, INFN-Torino
two 6-chip modules (power and controller chips)
to keep cables out of active region
Pixel detector scheme
Disk and stave layout
Half disk
• Disk split in two halves along the mid-plane
• Material for heat dissipation/support: carbon foam
• Embedded cooling capillary between the two halves
• All elements glued with thermal glue
• Problem: large glued area -> test have to be performed
“Ωmega” support (CFRP – thermal & structural)
cooling capillary
reference block
foam substrate
Barrel super-module
First study on water cooling system
Small and partial prototype of a disk
Cooling fluid: water @ 18.5 °C
12 resistors (1 W/cm2 each resistor)
POCO-HTC foam support (4 mm thick)
Stainless steel pipes (øe2mm, øi1.84mm)
TEMPERATURE PROFILE
Cooling test results – IR image
Results from simulations
POCO-HTC K (75, 245, 245) W/mK
1 W/cm2
0.3 ℓ/min
water 18.5 oC
Epitaxial silicon devices
D. Calvo
Diodes and single chip sensor from epi-wafers
49 mm (4060 W·cm, n/P) + 500 mm Cz substrate (0.01-0.02 W·cm, n+/Sb) → 100 mm
74 mm (4570 W·cm, n/P) + 500 mm Cz substrate (0.01-0.02 W·cm, n+/Sb) → 120 mm
98 mm (4900 W·cm, n/P) + 500 mm Cz substrate (0.01-0.02 W·cm, n+/Sb) → 150 mm
1.02 mm2
9.06 mm2
50.12 mm2
4.05 mm2
Single chip assembly


pixel obtained with the ALICE masks (50 mm x 425 mm)
test performed using ALICE pixel readout chip and test
system in collaboration with P. Riedler - CERN
NIM A594 (2008) 29-32;
D. Calvo, P. De Remigis, F. Osmic,
P. Riedler, G. Stefanini, R. Wheadon
with the ALICE layout at FBK
Diodes
300 mm FZ diodes have
been used as reference
Test of radiation damage with neutrons from Pavia nuclear
reactor. Equivalent fluence values on the diodes :
5.13x1013, 1.54x1014, 5.13x1014 n(1MeVeq)/cm2
corresponding to ~ 1, 3 and 10 years of PANDA lifetime
V
fd
[V]
Results from radiation damage test with neutrons
100
80
Epi-50
Epi-75
Epi-100
60
40
20
0
0
10
20
Before irradiation
1 year
40
13
-2
F eq [10 cm ]
50
60
10 year PANDA lifetime
Annealing Phase @ 60°C:
full depletion voltage normalized to 50 mm thickness
70
Full depletion voltage
normalized to Epi-50 [ V ]
3 year
30
Epi-50; 1 year
60
Epi-75,n; 1 year
Epi-100,n, 1 year
50
FZ,n; 1 year
Epi-50, 3 years
40
Epi-75,n; 3 years
30
Epi-100,n; 3 years
Epi-50; 10 years
20
Epi-75,n; 10 years
Epi-100,n; 10 years
10
0
0
After irradiation,
before annealing
10
20
30
40
Annealing time [ day ]
50
60
70
Vfd = eNeffd2/ 2eS
Neff: effective doping concentration
d: diode thickness
eS : silicon dielectric constant
Results from radiation damage test:
the radiation damage constant
Diode volume current
3
@ full depletion bias voltage [ A / cm ]
Equivalent fluence values on the diodes : 5.13x1013, 1.54x1014, 5.13x1014n(1MeVeq)/cm2
corresponding to 1, 3 and 10 years of PANDA lifetime
Pre-irradiation
1 year
3 years
10 years
1.E-01
1.E-02
1.E-03
1.E-04
The radiation damage constant is
a = DJ/F = 7.6(0.3)x10-17 A/cm for all diodes.
1.E-05
1.E-06
1.E-07
1.E-08
Epi-50
Epi-75
Epi-100
Lekage current < 50 nA/pixel (100 mmx100mm size, 100 mm thick)
The diode volume current @ full depletion voltage, after a 65 days annealing phase @
60°C, decreased by a factor 2.
ASIC prototype
D. Calvo
The architecture of ToPix_2
ANALOG
100 mm
100 mm
latch
comp
preamp
enable
baseline
restorer
5
DAC
control
logic
12
7
12
Pixel
126
Pixel
125
Pixel
124
Column 0
Column 1
128 cells
Pixel
0
Busy
Counter/Shift
Sense amplifiers
Output
bus
Column 3
32 cells
Cint
12
Column 2
32 cells
Ifb
Pixel
127
Address
Data
reset
freeze
read_cmd
read_le
read_te
config_phase
Time stamp/configuration bus
0
le_reg
•
•
•
•
cfg_reg te_reg
•
5x2 mm2 area with 4 folded columns with a total of 320 readout cells of 100x100mm2 size
analogue + digital circuits (analog power consumption below 12mW @1.2V)
Clock @ 50MHz
Time over Threshold technique implemented to obtain a energy loss measurement
SEU-hardened memory cells (Dice with baseline design:
all pmos devices are located in the same nWell and don’t have guard contact separation)
absence of enclosed structures to study the radiation tolerance of the 130nm CMOS
technology
inputs for connecting external sensors (selectable input polarity)
comparator threshold controlled by DAC (5 bits)
12 + 12 bits leading and trailing edge and 12 bits configuration registers
12 bits bus for time stamp and 12+7 bits output bus for data + address
mask
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•
•
•
•
DIGITAL
ToPix_2, 130 nm CMOS technology
Characterization of ToPix_2
18
ToT technique
allows to achieve
good linearity and resolution,
16
even when the premplifier is satured
(high dynamic
range->1÷100fC)
14
Epitaxial pixels (125mm x 325mm, 50 mm thick)
12
ToT [us]
10
Pixel 16
Pixel 21
8
6
Average gain = 152 ns/fC
σ
= 6 ns/fC
4
2
0
0
20
40
60
80
100
300
250
Topix 2 50MHz
50µm epi sensor
Am241 60keV g
120
50
Input charge [fC]
Fit results:
Peak 31.1
Sigma 1.7
40
Topix2
Before correction
After correction
30
200
20
150
100
10
50
0
0
0
0.78
0.79
0.80
Baseline (V)
0.81
0.82
10
20
30
Time over threshold (clock cycles)
TOT calibration
40
50
TID test on ToPix_2
0.34 Baseline variation < 3 %
Board 00
Board 01
Board H
0.33
0.32
0.31
0.30
0
10 20 30 40
Dose (Mrad)
0
100
200
Mean cal sig amplitude (V)
Average baseline (V)
Total Ionizing Dose test with the X ray source at CERN (Thanks to F. Faccio)
followed by an annealing phase at 100°C
0.6
0.5
0.4
0.3
0.2
Board 00
Board 01
Board H
0.1
0.0
0
Annealing time (hours)
10 20 30 40
Dose (Mrad)
0
100
200
Annealing time (hours)
Average tail slope variation ~ 2 times
-12x10
1.0
0.5
Board 00
Board 01
Board H
0.0
0
10 20 30 40
Dose (Mrad)
0
100
200
Annealing time (hours)
Average tail slope (V/clk)
Average noise (mV)
1.5 Noise variation ~ 20 %
-3
Board 00
Board 01
Board H
-10
-8
-6
-4
-2
0
0
10 20 30 40
0
100
200
Dose (Mrad)
Anneal time (hours)
SEU test on ToPix_2
12 bit configuration register made by SEU-hardened memory cells based on first Dice architecture
(all pmos devices are located in the same nWell and don’t have guard contact separation)
SEU cross section of ToPix2 for heavy ions. The
test was performed at the SIRAD facility (INFNLNL). Thanks to A. Candelori
And using the method described in the paper of
M. Huhtinen, F. Faccio - CERN
“Computational method to estimate SEU rates in an
accelerator environment”; NIM A 450 (2000) 155-172
IONS: O, F, Si, Cl, Ni, Br
1 mm thickness of silicon
Hadron flux on the disk 2 of the pixel detector,
evaluated for pbar-p interactions @15 GeV/c:
5.8 [Mhit /(s·cm2)]
In the PANDA environment:
4.1·10- 9 SEU/s·bit
(evaluated with a 1mm3 sensitive volume)
2.3 SEU / hour are expected in the final ToPix readout chip taking into account:
a 12 bit configuration register in each pixel readout cell with the same DICE architecture
12760 pixel readout cells
Conclusions
 the carbon foam is an interesting material for the power dissipation of the pixel
detector
 the use of epitaxial silicon material could be very promising, also in term of
radiation damage, but an epitaxial resistivity tuning has to be performed for the full
depletion voltage optimization
the 130 nm CMOS technology is suitable to develop the pixel readout for:
 limited power consumption
 smaller pixel with many functionalities, but
 enclosed gate layout is needed for the critical transistors of the discharge circuit
or larger current is needed from the capacitor discharge circuit
 the implemented DICE architecture (first level of radiation hardness) isn’t
completely satisfactory for the PANDA environment
D. Calvo
Results from thin Si-epitaxial pixel assemblies
Test performed with a 90Sr source
to verify the bump bonding process
1000
Total pixel number
in the assembly: 8192
80
Dead pixel [ # ]
Lekage current [ nA ]
Epi 75 and Epi 50
100
10
0
50
100
150
Bias voltage [ V ]
200
60
40
20
0
Epi 50
(S15)
Epi 75
(S8)
Epi 75 Epi 100 Epi 100
(S14)
(S5)
(S6)
Dead pixel %  0.05 %;
 1% (worst case)
Test performed with a 90Sr source
Threshold values in electrons corresponding to the Landau
most probable value for the different epitaxial layer thicknesses
NIM A594 (2008) 29-32; D. Calvo, P. De Remigis, F. Osmic, P. Riedler, G. Stefanini, R. Wheadon