Euvl Extreme Ultraviolet Lithography

Download Report

Transcript Euvl Extreme Ultraviolet Lithography

P.Vinodh
09B21A0422
Lithography is basically a photographic process that
allows more and more features to be crammed onto a
computer chip.
.
The current process used to pack more and more
transistors onto a chip is called deep-ultraviolet lithography
Boosting EUV Lithography
Microchip production: technology of the future
comes ever closer
How EUVL chip making works
Making Chips
Moore's Law
The EUVL Process
Applying Uniform Thin Films
The Mask-Making Challenge
Outlook for EUV Lithography: Past, Present,
and Future
Conclusion
Use of transistors
Boosting EUV Lithography
How EUVL chip making works
Silicon has been the heart of the world's
technology boom for nearly half a century
The current process used to pack more and
more transistors onto a chip is called deepultraviolet lithography
Using this lithography we can increase the memory chip storage also
Making Chips
1.
2.
3.
4.
Mask
Photo resist
Silicon dioxide
Silicon wafer
Process
6. Moore‘s Law

1965: Gordon Moore plotted the number of transistors on each
chip
 Fit straight line on semi log scale
 Transistor counts have doubled every 18 months
1,000,000,000
100,000,000
10,000,000
Transistors
Intel486
1,000,000
Pentium 4
Pentium III
Pentium II
Pentium Pro
Pentium
Intel386
80286
100,000
8086
10,000
8080
8008
4004
1,000
1970
1975
1980
1985
Year
1990
1995
2000
Integration Levels
SSI:
10 gates
MSI:
1000 gates
LSI:
10,000 gates
VLSI:
> 10k gates
The EUVL Process
1. A laser is directed at a jet of xenon gas. When the laser
hits the xenon gas, it heats the gas up and creates a
plasma.
2. Once the plasma is created, electrons begin to come off
of it and it radiates light at 13 nanometres, which is too
short for the human eye to see.
3. The light travels into a condenser, which gathers in the
light so that it is directed onto the mask.
4. A representation of one level of a computer chip is
patterned onto a mirror by applying an absorber to some
parts of the mirror but not to others. This creates the
mask.
The pattern on the mask is reflected onto a series of four to six curved
mirrors, reducing the size of the image and focusing the image onto the
silicon wafer. Each mirror bends the light slightly to form the image that will
be transferred onto the wafer. This is just like how the lenses in your camera
bend light to form an image on film.
Applying Uniform Thin Films
Lawrence Livermore and Lawrence Berkeley developed advanced multilayer
coatings of molybdenum and silicon that can reflect nearly 70 percent of the
EUV light at a wavelength of 13.4 nanometers.
Applying these coatings evenly is a difficult task even when a mirror is flat, but
EUVL mirrors are either convex or concave.
Any small non uniformity in the coatings destroys the shape of the optics and
results in distorted patterns printed on the chips
The Mask-Making Challenge
Industry experts generally agree that the biggest challenges and risks for the
next generation of lithography systems involve the mask—that is, the master
pattern used to “print” the semiconductor circuits onto the silicon wafers or
chips.
The technology that successfully overcomes the hurdles of mask production has
a good chance of becoming the preferred choice.
One key requirement is to produce a mask with essentially no defects. Any
small defect ends up being replicated, or printed, in the lithography process
onto the computer chips being manufactured, thus damaging the chips’
complex circuitry.
A key breakthrough in this area was the development of an Ultra Clean Ion
Beam Sputter Deposition System about two years ago