Transcript PREM NMHU Highlights - Dopants

n-Type Metallocene Dopants for Organic Thin-Film
Transistors and Other Applications
Evgheni Jucov, Siyuan Zhang, Benjamin D. Naab, Zhenan Bao,
Marina Fonari, Stephen Barlow, Seth R. Marder, Tatiana V.
Timofeeva
NMHU, DMR 0934212
The promise of low-cost processing and flexible circuitry has driven intense research in carbon-based
electronics. The performance of carbon-based materials can be effectively tuned by the application of redox reagents
dopants, through increasing the conductivity and decreasing the injection barrier. Two ferrocene and two ruthenocene
substituted compounds (1-4) were investigated with X-ray single crystal analysis. These compounds represent a
series of new benzimidazole-based n-type dopants, which can be used to dope a variety of semiconductors for
organic thin-film transistors (OTFTs) and other applications. They react (faster than similar air-stable organic dopants)
with a variety of electron-transport materials, including fullerenes and perylene diimides, to form the corresponding
radical anions and monomeric benzimidazolium cations. Studied compounds are proved to be effective dopants for a
variety of vapor- and solution-processed materials.
Crystal data and structure refinement
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Structures of 1-4
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