Transcript Phenix-ONS_PadSensors-2006-01

Phenix NCC Silicon Pad Sensors
produced in ON Semiconductor
Lukas Tomasek, Michal Tomasek, Vaclav Vrba
Institute of Physics, Prague
Michael Finger, Miroslav Finger
Charles University, Prague
Michael Merkin at al.
Moscow State University
Edward Kistenev, Edward O’Brien
Brookhaven National Laboratory
Richard Seto
University of California at Riverside
Matthias Grosse Perdekamp
University of Illinois at Urbana-Champaign
.
e-mail, April 9, 2006
1
Václav Vrba, Institute of Physics, Prague
Layout of components on the wafer
e-mail, April 9, 2006
2
Václav Vrba, Institute of Physics, Prague
I-V and C-V on single diodes
e-mail, April 9, 2006
3
Václav Vrba, Institute of Physics, Prague
I-V curves for 4x4 pad array
e-mail, April 9, 2006
4
Václav Vrba, Institute of Physics, Prague
I-V curves for 4x4 pad array
e-mail, April 9, 2006
5
Václav Vrba, Institute of Physics, Prague
Reverse current long term stability
e-mail, April 9, 2006
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Václav Vrba, Institute of Physics, Prague
I-V curves for 4x4 pad array
e-mail, April 9, 2006
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Václav Vrba, Institute of Physics, Prague
Summary
• 8 wafers with pad sensors of Phenix design with integrated bias
resistors have been fabricated in ON Semiconductor;
• First measurements indicate very good quality of sensors and also of
integrated resistors;
• For future production QA criteria and measurement procedure shall
be elaborated. It will help also better define and accent our needs;
• At the moment ONS is finishing processing of the second part of
wafers (out of 24 raw wafers provided by Misha Merkin);
• It is highly desirable to send to ONS a.s.a.p. new wafers 525 µm thick
purchased from Wacker Siltronic for further production.
e-mail, April 9, 2006
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Václav Vrba, Institute of Physics, Prague