Transcript Modeling of electronic noise and analysis.

Modeling of Quantum Noise with
Electron-Phonon Interactions
Objective:
• Noise modeling for nanoscale devices
with electron-phonon interactions
• Development of NEGF-based
numerical simulators
Approach:
• Model random motion of electrons due
to various noise sources such as
• Contact injection
• Random transmission
• Electron-phonon interactions
• Silicon nanowire transistors with
diameter 4 nm, length 30 nm
Impact:
• Suggested a general approach to the
quantum noise calculations
• Shot noise phenomena are
investigated.
Hong-Hyun Park
Electron density, transfer function, and noise contribution
spectrums (left)
Drain current noise characteristics in the weak-inversion and
strong-inversion regimes (right)
Result:
• Pauli’s exclusion principle and the longrange Coulomb interactions suppress
shot noise in the strong inversion
regime.