Transcript High-Speed Semiconductor Devices Peide (Peter) Ye Office: EE 252

ECE 658: Semiconductor Material
and Device Characterization
Peide (Peter) Ye
Office: Birck 1291
E-mail: [email protected]
Tel: 494-7611
Course website: http://cobweb.ecn.purdue.edu
/~yep/courses.htm
Location: EE 226
Time: MWF 8:30-9:20 am
Office Hour: 10:00am-7:00pm anytime
Course Description:
An examination of modern characterization techniques routinely employed
to determine semiconductor material and device parameters.
Concepts and theory underlying the techniques are reviewed, and sample
experimental results are presented.
Emphasis is on techniques employing electrical measurements.
Course Objectives: This course is intended for graduate students in MN and
related areas who are either i) interested in pursuing research in semiconductor
materials, structures or devices, or ii) seeking the broad device background on
the-state-of-the-art technologies for a future R&D career in the microelectronic
industry.
Fundamentals
State-of-the-art
Teaching Philosophy for ECE 658
• Motto “Durch Messung zu Wissen”(German)
“During or through measurement to
understand” (English)
• The best way to learn ECE 658 is to
measure the devices in the lab and
understand what you are measuring.
• 4 lectures + 2 hours (lab or discussion
sessions) every two weeks
Required Textbook:
$65 at Amazon
(1)Resistivity
(2)Carrier/Doping Density
(3) Rc and Schottky Barries
(4) Rs,Lg,VT
(5) Defects
(6) Oxide integrity
(7) Carrier lifetime
(8) Mobility
Course Grading
Final Exam :
100%
Home work / attendance/
literature research / discussion:
determining the final grade in
borderline cases
yep/
From 612--Prof. M.Lundstrom
Lecture 1: Resistivity
metal
semiconductor
Insulator
easy
(1) DOS
(2) Mobility
Lecture 1: Resistivity
1.1 Introduction
(1) DOS
(2) Mobility
Lecture 1: Resistivity
1.2 The Four-Point Probe
Big difference: two point and four
point measurements
Big difference
For an arbitrarily shaped sample,
What decides F, next Lecture
Homework: Reading relevant pages