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A High-Speed & High-Capacity Single-Chip Copper Crossbar
John Damiano, Bruce Duewer, Alan Glaser,
Toby Schaffer,John Wilson, and Paul Franzon
North Carolina State University
Crossbars consist of numerous
Why a Crossbar for the Copper Challenge?
input and output lines with logic that
can, upon programming, provide for
the arbitrary and simultaneous
connection of any input to any
output, as shown at right. The
crossbar is an essential part of many
circuits
requiring
multi-channel
signal switching, such as ATM
switches, specialized VLIW video
signal processors, and many DSPs.
•The need for high-speed switching technology
is growing as designs grow faster, especially
with the advent of SOC technology.
•Crossbar circuits inherently contain long,
heavily-loaded interconnects and thus represent
a family of designs, such as SRAM, DRAM, and
cache memory.
•The crossbar is simple and efficient enough to
directly demonstrate the advantages offered by
advanced interconnect
Features of the Copper Crossbar
Efficient programming - fully programmable using input / write enable lines, programming
performed column-by-column. This crossbar design is non-blocking - any input can be sent to
any output, and the crossbar can operate in broadcast mode.
Reset - instantly writes a "0" to all cells & clears all outputs. All output lines remain low until
programmed. Reset is performed prior to re-programming or pre-configuration.
Pre-configure - allows instant programming for any of several common I/O configurations
within a single write cycle (<3ns). Our circuit features two built-in configurations: corner turn
and broadcast mode (illustrated at right). Pre-configured input/ output mappings improve
testability and can be modified to fit the needs of a specific application.
Pre-Configurations
Cell Schematic
Crossbar Cell Design
The crossbar cell contains a latch used to
store a memory bit (left). An I/O connection
is created by writing a '1' to a single
memory bit within each output column. A
memory bit is programmed by holding the
selected input 'high' while strobing the
chosen output line's write_enable line
(right). The stored memory bit is used as
one input to a 2- input AND gate and
therefore determines which input is passed
to the output line. Crossbar cell AND
outputs for a given output column are sent
through an OR tree to a single output line.
Crossbar Cell Layout
The layout of a pair of crossbar cells is shown at right. The output of
the two cells is OR'd by the top OR gate, while the bottom OR gate is
made available for the OR tree configuration.
The individual
components of the cell are noted in and can be compared to the
schematic above.
Within the crossbar cell, all transistors are
minimum length. The selective use of minimum-width devices reduces
the capacitive load on the long input and output lines. For example,
the NAND gate driven by the 2.43mm-long input line uses minimumsize 0.24mm/0.18mm NMOS and 0.36mmv/0.18mm PMOS transistors to
reduce the capacitive load on this line. Alternatively, the transistors
within the OR gate tree are wider to drive the long interconnect
between the final OR stages.
Interconnect Strategy
Our interconnect strategy is illustrated at right - M3 and M5 layers are of
particular interest. M3 pitch is as large as possible given the number of
output interconnects required and the cell size Interconnect for the final
gates in the OR tree are the longest and therefore present heavy loads. The
single input line per cell was placed on M5 to minimize their resistance.
Interdigitated ground lines shield the signal lines, reducing the likelihood of
crosstalk and delay problems introduced by self-inductance. The capacitive
load on M3 and M5 interconnect - the input and output stages respectively limits the maximum input signal frequency and has the most impact on its
performance, especially for the M3 lines where line capacitance dominates
load capacitance.
Full Report available on the web at http://www.ece.ncsu.edu/erl/copper
T itle:
36pt/rev/bw.eps
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Comment:
Crossbar programming