Transcript 40V to 200V Family of Automotive

40V to 200V Family of Automotivequalified MOSFETs Deliver Benchmark
On-State Resistance Performance
The new family of trench HEXFET® power MOSFETs
is available across a range of voltages from 40V to
200V in a variety of surface mount device (SMD)
packages. Both standard and logic level gate drive
MOSFETs set a new standard of RDS(on) performance
for IR’s automotive plastic package MOSFET
portfolio.
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Advantages
Features
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Built on AU Gen 10.7 trench technology
Ultra Low On-Resistance
Wide voltage range, 40 to 200V
175ºC operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
Lead-free, RoHS Compliant
Automotive qualified
• Benchmark RDS(on) as low as 1.25 mohm max at 40V, 2.1 mohm
max at 60V, 2.6 mohm max at 75V and 4.0 mohm max at 100V can
be achieved. A number of the devices feature a maximum current
rating of up to 240A in a D2Pak-7P.
• The automotive MOSFETs are subject to dynamic and static part
average testing combined with 100 percent automated wafer level
visual inspection as part of IR’s automotive quality initiative
targeting zero defects.
• AEC-Q101 qualification requires that there is no more than a 20
percent change in RDS(on) after 1000 temperature cycles of testing.
However, in extended testing the new AU bill of materials
demonstrated a maximum RDS(on) shift of less than 10% at 5,000
temperature cycles, showing the strength and ruggedness of the
bill of materials
September 2011