Transcript Rugged, Reliable Automotive-Qualified Power MOSFETs Housed in

Rugged, Reliable Automotive-Qualified
Power MOSFETs Housed in TO-220
Fullpak Package
This family of automotive-qualified power MOSFETs is
housed in a rugged TO-220 fullpak package for
automotive applications including BLDC motors,
pumps and cooling systems.
Features
Standard Gate Drive
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Advanced Planar Technology
Low on-resistance
Isolated Package
High voltage isolation = 2.5 KVRMS
Sin to lead creepage distance = 4.8mm
175ºC operating temperature
Fully avalanche rated
Lead-free RoHS compliant
Automotive Qualified
Logic Level Gate Drive
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Advanced Planar Technology
Logic-Level Gate Drive
Low on-resistance
Dynamic dv/dt rating
175ºC operating temperature
Fast switching
Fully avalanche rated
Repetitive avalanche allowed up to Tjmax
Lead-free RoHS compliant
Automotive Qualified
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DATA SHEET
HI-RES
GRAPHIC
Automotive
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Advantages
• The new 55V planar devices are available as standard and logic
level gate drive MOSFETs in N and P channel configuration, and
offer a maximum on-state resistance (RDS(on)) as low as 8mOhm.
• The TO-220 fullpak package eliminates the need for additional
insulting hardware to simplify design and improve overall system
reliability.
• Based on IR’s proven planar technology, this new family of
MOSFETs available in a TO-220 fullpak package perform well in
linear mode and in automotive applications where a rugged reliable
MOSFET is needed to drive highly inductive loads.
• An additional passivation layer on the surface of the die forms an
insulting layer which improves reliability.
June 2012