Transcript Lateral Asymmetric Channel (LAC) Transistors

Lateral Asymmetric Channel (LAC)
Transistors
• Asymmetrically doped channel; heavier
doping near source
• Improved characteristics
– Better DIBL
– Velocity overshoot
– Improved hot-carrier performance
• Disadvantage: Design difficult
Fabrication - LAC Transistors
• E-beam lithography used to define
channel lengths down to 100 nm
• VT implant (tilted by 7-15 degrees) for
LAC devices done after gate oxidation
• Two-step Ti silicidation and Ge
preamorphization to control silicide
depth and reduce series resistance
Silicon-on-Insulator (SOI)
• Active silicon on a thick insulator (SiO2)
• Mainstream technology of the future?
SOI-Advantages
• Higher Driving Current: Due to the floating body effect, the "off"
threshold voltage becomes higher, while the "on" threshold voltage
becomes lower. Subthreshold slope improves and leads to a possibility of
scaling the power supply down. Additionally it creates the low static power
consumption.
• Reduction of Parasitic Capacitance: Because the substrate
is floating, the Source & Drain capacitance of the transistor is eliminated
resulting in the improvements of speed. It also contributes the lower
dynamic power consumption and higher clock frequency.
• No Body Effect
• Latch-up Immunity: Due to the floating substrate, possibly
generated hot carriers do not go through the substrate preventing the
substrate voltage from rising up enough to form the forward junction
between source and body.
• Improved Density
• Noise Decoupling
SOI Disadvantages
Identical process flow for PD-SOI
However, its FBE(Floating-Body Effect) imposes a
considerable difficulty in circuit and device design
ex: “Kink Effect in PD-SOI”
Single Transistor Latch-Up.
IBM has announced
SOI based
Microprocessors
Silicon-on-Insulator (SOI) MOSFETs:
and CON Devices
LAC Implant
G
0.8
S
D
Buried Oxide
Ids (A/m)
0.6
LAC
L = 0.1m
TSOI = 35nm
Points LAC
(Vg - Vt)
Lines CON
1.4 V
0.4
1.15 V
0.9 V
0.65 V
0.2
0.4 V
Si substrate
0.0
0.0 0.5 1.0 1.5 2.0 2.5
Vds (V)
Metal Gate FET
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Why not Poly-Si ?
•
•
•
•
Poly Depletion (insufficient activation)
Boron Penetration (ultra-thin oxides)
High-K Dielectrics (incompatible)
VT adjustment (with jms)
The Ideal MOS Transistor
Vertical Replacement Gate
Transistor
From J. M. Hergenrother et al., IEDM 1999, p.75
Metal Gate FET
Why not Poly-Si ?
• Poly Depletion (insufficient activation)
• Boron Penetration (ultra-thin oxides)
• High-K Dielectrics (incompatible)
• VT adjustment (with jms)
FinFET – A 3-D MOSFET
• Vertical Channels
• Double Gate
• SOI
• Better Performance
Double & Triple Gate FinFETs
Double Gate FinFET
Triple Gate FinFET:
20 % greater currents
Different types of Double Gate
Devices
Corner Effect in TG FinFETs
Finfet Design Considerations
Contacting Finfets
UC Berkeley
Finfet S/D contact Design
T.J.King, UC Berkeley
Litho- FinFET process flow
• Makes use of SOI Delta
structure on planar technology
• Gate first process
• As tsi < Lg, e-beam or opt.
lithography with extensive
line width trimming used
• Fabrication steps after fin
formation are analogous to
Bulk MOS
Spacer FinFET
• Sub litho dimensions can be
achieved
• Fin quality determined by
surface roughness
• Methods for fine fins are to
be developed.
• Fin pitch should be smaller
than Fin height
FinFET circuit prospects
• Useful for driving I/C dominated lines such as WL/BL in
SRAM, Registers, DRAM
• 70% of chip area/leakage by these blocks in uP
• In FinFET ION increased without area/leakage penalty
• Also we can afford decrease in VDD and increase in Vt,
saving power for same performance.
• Optimum (VDD – TSi – VT ) design space required for
FinFET chips. (as fin aspect ratio is typically 5)
FinFET circuit prospects
• Independent
Double-Gate MOSFETs
• Front and back (top or bottom) gates can operate independently
• Better logic design
• Dynamic VT control, and thus adaptive threshold
and leakage tuning.
• Mixer Circuits for RF applications
• M1 and M2 can be combined into one DGFET
• Switch level model for conduction is controlled using signal ‘A OR B’
• One of the advantages of planar double-gate devices over FinFETs
from a
circuit designer’s perspective is the possibility of independent backgate-bias.
FinFET circuit prospects
IEEE Transactions on Electron Devices, 2005.
Carbon Nanotubes
Graphene sheet
Single wall CNT
Multi wall CNT
CNT’s can be single-wall or multi-wall
CNT diameter can range from 1 – 20 nm
CNT lengths can range from 100 nm – 10 um
CNT’s can be semiconducting or metallic
CNT’s can be used as FETs, interconnects, ….
Carbon Nanotube Transistor
CNT Field Effect Transistor
Conclusions
• MOS transistors are conceptually simple devices
• Both NMOS and PMOS transistors can be made, and
effectively combined in CMOS circuits
• Transistor scaling leads to great benefits, and has driven
Moore’s law during the last three decades
• Transistor down-scaling leads to some problems, which
have been effectively combated by improved transistor
design
• Scaling is likely to continue till at least 2010, when
transistor dimensions will be less than 0.05μm