Transcript 슬라이드 제목 없음

IGBT Technical Training
for FSC Family
2002. 01. 10
By Application Engineering Group
판매대리점:피앤에스반도체
www.pns4u.co.kr
02-2107-7240
REV.1
1/45
Construction & Operation of IGBT
The operation of the IGBT simply can be treated as a partitioning of an
N-channel MOSFET and a PNP bipolar transistor.
The IGBT functions as a bipolar transistor that is supplied base current
by a MOSFET.
EMITTER
GATE
COLLECTOR
N
P
P
N
NGATE
N+
P+
EMITTER
COLLECTOR
Structure Of IGBT
Equivalent Circuit
2/45
What`s a IGBT ?
IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar
to the power MOSFET in operation and construction.
These devices offer superior performance to the bipolar-transistors. They are core costeffective solution in high power, wide range of frequency applications
COMPARISON TABLE
T R
IGBT
MOSFET
CURRENT
VOLTAGE
VOLTAGE
CONTROL POWER
HIGH
LOW
LOW
CONTROL CIRCUIT
COMPLEX
SIMPLE
SIMPLE
LOW
LOW
HIGH
SWITCHING SPEED
SLOW
MEDIUM
FAST
SWITCHING LOSS
HIGH
MEDIUM
LOW
ITEM
SYMBOL
CONTROL PARAMETER
ON-RESISTANCE
3/45
Absolute Maximum Rating of IBGT
Symbol
BVCES
BVGES
ICmax
ICpeak
PCmax
FBSOA
SCSOA
Descriptions
Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited)
Maximum voltage applicable between G-E
Maximum DC current can flow into the collector. Indicated by radiation condition (ex: TC=25˚C)
Maximum Peak current can flow into the collector. Indicated by current pulse width(ex:10μs) and Dutycycle(ex:below 1%), and Radiation condition.
Allowable collector loss and maximum current consumption.
In usual case, at the temperature of TC (ex : 25˚C), the thermal resistance
PC (max)
Rθjc = --------------------becomes and usually indicated by its upper limit.
Tj(max) - TC
Forward Bias Safe Operating Area
It is the maximum pulse responding operation range to the voltageVce between C-E and the graph of the
collector current. The characteristics of the high voltage part is deteriorated due to the thermal loss and the
over concentration of current.
It is because of the phenomena called the second breakdown mode.
Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due to human fault then the
flow of the abnormally high current would destroy the device, so the current sensing and the feedback to the
control block become the necessity. Which requires the IGBT should withstand the short- circuit condition
for about 3~5μs.
ex: If the load is short-circuited when the applied voltage between the C-E is about 300~500V, then the
current upto 8-12 times higher than the rated current will flow which would destroy the device within
20~30μs. Thus the protective circuit is designed to be about 10μs with the consideration
of the feedback delay time.
4/45
Thermal Resistance
Symbol
Descriptions
RθJ-C(I)
Thermal resistance between IGBT's junction to case
RθJ-C(F)
Thermal resistance between FRD's junction to case
RθC-S
Thermal resistance between the case of IGBT to the heat sink
Electerical Characteristics
Symbol
BVCES
VGE(th)
ICES
IGES
Descriptions
Collector-Emitter Breakdown Voltage (Gate-Emitter is short-circuited)
The breakdown voltage between C-E when the gate and the emitter is short-circuited and the rated current
(ex: IC=10mA) is applied to the collector. Normally the minimum value (ex: 600V) is defined.
Gate Threshold Voltage
The voltage between Gate-Emitter at the rated voltage between C-E and for the rated current IC(ex: 1mA).
The minimum and the maximum value is given.
Collector Cutoff Current
The maximum collector current when the gate and the emitter is short-circuited and
the rated voltage is applied to the collector.
Gate - Emitter Leakage Current
The maximum gate current when the collector and the emitter is short-circuited and
the rated voltage is applied between the gate-emitter.
5/45
Symbol
VCE(sat)
Qg
Cies
Coes
Cres
Td
Tr
Ton
Tf
Toff
Descriptions
Collector - Emitter Saturation Voltage
The saturation voltage between the collector and the emitter when the rated current is
applied to the collector and the rate voltage is applied between the gate and the emitter.
Total Gate Charge
The amount of the gate electric charge needed for the IGBT to be completely On.
The amount of the driving current needed can be decided.
Input Capacitance
Output Capacitance
Reverse Capacitance
Turn on Delay Time
The time for the output to reach the 10% of the maximum of the output current
waveform after the pulse is applied to the gate.
Turn on Rise Time
The time to reach from 10% to 90% of the output current waveform.
Turn on Time
The time for the output to reach the 90% of the maximum of the output current
waveform after the pulse is applied to the gate.
Turn off Falling Time
The time to reach from 10% to 90% of the output current waveform.
Turn off Time
The time for the output to reach the 10% of the maximum of the output current
waveform after the pulse is removed from the gate.
6/45
IGBT Operation Area
HIGH VOLTAGE
HIGH CURRENT
25 KW
10
GTO
POWER
1
HIGH
FREQUENCY
IGBT
BJT
MOSFET
0.1
1
70
FREQUENCY
7/45
1000KHZ
Industrial Applications of IGBT
IGBT
Module & Discrete
☞Elevator
☞F.A.
- Inverter,
AC servo,
Robotics
☞Power Supply
☞Welding
machine
8/45
- UPS, SMPS
☞Transportation
-Ignition control,
Battery charger
Consumer Applications of IGBT
IH-Jar
(Rice Cooker)
IGBT
Module & Discrete
IH-Cooker
4|00
MWO
Camera
Strobo
Washing
machine
Inverter
Air-conditioner
9/45
12:30
Examples of Application Circuit (I)
☞ home appliance (IH-JAR, IH-Cooker, MWO..)
☞ Package Type : TO-220, TO-3P, TO-264 (SGP.., SGH..., SGL...)
☞ Current rating : 30 ~ 80A
2*IGBT DISCRETE
1*IGBT DISCRETE
SINGLE ENDED TYPE
HALF BRIDGE TYPE
(VCE : 900 ~ 1700V)
(VCE : 600V)
10/45
Examples of Application Circuit (II)
☞ Industrial Equipment (Welding, UPS, IH Heater)
☞ Package Type : 2-PAK,1-PAK Module(FM2G...,FM1G....)
☞ Current Rating : 600V : 50 ~ 600A, #1200V : 50A ~ 200A
4*1-PAK IGBT MODULE
2*2-PAK IGBT MODULE
FULL BRIDGE TYPE
11/45
Examples of Application Circuit (III)
☞ 3Phase Motor Drive.(Inverter,Frequency Converter)
☞ Package Type : 6-Pak,2-Pak,1-Pak Module(FM6G...,FM2G...,FM1G....)
☞ Current Rating : 600V : 50 ~ 600A, 1200V : 50A ~ 200A
6*Discrete CO-PAK
1*6-PAK IGBT MODULE
2*2-PAK IGBT MODULE
6*1-PAK IGBT MODULE
M
3PHASE BRIDGE TYPE
12/45
Examples of Application Circuit (Ⅳ)
DC Chopper
DC Servo (NC, ROBOT)
DC.M
DC.M
From
Rectifier
From
Rectifier
13/45
Examples of Application Circuit (Ⅴ)
Low Output CVCF Inverter
CVCF Inverter (UPS)
Filter
M
14/45
Examples of Application Circuit (Ⅵ)
VVVF Inverter (PAM)
M
VVVF Inverter (PWM)
M
15/45
Block Diagram of Inverter System
. Using the Conventional IGBT Modules
Variable Voltage &
Variable Frequency
Constant Voltage &
Constant Frequency
AC Source
Diode
Rectifier
or
PFC Unit
DC  Link
Capacitors
IGBT Modules
AC Motors
Sensing Unit
Gate Drivers
Isolation Unit
Isolation Unit
CPU
16/45
Isolated Multi
Power Supply
for Gate Driving
Power Supply
for Control
Home Appliances Application
. Using the Conventional IPMs
Constant Voltage &
Constant Frequency
AC Source
100 ~ 250 V
IGBTs
Diode
Rectifier
or
PFC Unit
Variable Voltage &
Variable Frequency
Gate Drivers
DC  Link
Capacitors
Sensing Unit
AC Motors
Isolation Unit
ylppuS rewoP
lortnoC rof
CPU
17/45
Isolated Multi
Power Supply
for Gate Driving
Welding Machine type-1
Full Bridge Topology
50 ~ 400A / 600V,1200V(IGBT 2-PAK Module) : Large Capacity
Voltage
Current
+
3φ
Welding
Output
To Gate
Starter
PWM
18/45
Welding Machine type-2
2 IGBT Forward Topology
20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity
Voltage
Current
+
Welding
Output
3φ
To Gate
Starter
PWM
* Normally IGBT using by parallel connection
Parallel numbers depend on output power
* Need Vce(sat) matching tightly (with in 0.1V)
19/45
Welding Machine type-3
Half Bridge Topology
50 ~ 400A / 600V,1200V(2-PAK) : Large Capacity
20 ~ 50A / 600V,1200V(Discrete) : Small and Medium Capacity
Voltage
Current
+
3φ
Welding
Output
To Gate
PWM
Starter
20/45
Un-interruptible Power Supply
Application
Personal Use 10~50A / 600V,1200V(Depend on Battery Design)(Discrete)
For Group Source 50~600A / 600V,1200V(2Module,1Module)
Voutput
Ac
AC-DC
Converter
Output
Battery
Pack
Control
Circuit
To IGBT
Output
21/45
Power Factor Correction
Application
20~40A/600V(Discrete)
Home Appliance, Air-conditioner
For Telecommunication Power and industrial power
Vout
Regulated
DC Output
T
To Load
AC
Controller
V,I
P.F > 0.99
22/45
Camera Strobe
+
- SCRs previously used in cameras change to IGBTs .
- By using IGBTs in strobe of cameras, flash control for exact focusing
and red-eye protection can be possible.
- Strobe application needs low Vce(sat), high peak current capability of IGBT
because of the relatively long switching period of a couple of milli-seconds.
- Industry needs trench IGBT for low-voltage operating battery system from 3V source.
2
+
1
+
+
A method of using SCRs
A method of using IGBT
23/45
Induction Heating JAR & Cooker
This single ended resonant inverter is developed for the rice cooker
because of simple construction, high efficiency and low cost.
■ IGBTSolutions
■ Features
Half & Full
Bridge Type
Single Ended Type
- SGH40N60UFD
- SGL80N60UFD
- SGL160N60UFD
- SGL60N90DG3
- SGL40N150D
- FGL40N150D
- FGL60N170D
- Low Saturation Voltage
- Simple Gate Drive
- Wide SOA
- IGBT With FRD
AC
Current Feedback
IH -Controller
24/45
Gate Drive
Circuit
Micro Wave Oven (ZVS type)
This single ended resonant inverter is developed for food cooker
because of simple construction, high efficiency and low cost.
■ Features
■ IGBTSolutions
Half & Full
Bridge Type
Single Ended Type
- SGH40N60UFD
- SGL80N60UFD
- SGL160N60UFD
- SGL60N90DG3
- SGL40N150D
- FGL40N150D
- FGL60N170D
DISPLAY
AC
Input
Key
PAD
u-Com
(4-Bit)
4|00
Control Circuit
&
Gate Driver
25/45
- Low Saturation Voltage
- Simple Gate Drive
- Wide SOA
- IGBT With FRD
IGBT Gate Drive Solutions-1
VCC1
2
1
VCC
2
1
1
2
1
2
1
3
2
1
2
VCC2
1
2
1
2
DRIVE IC
3
3
- Home Appliance(IH jar/cooker)
- Single ended topology
- General analog drive IC
- Device :AN6711(Panasonic)
TA8316S(Toshiba)
FAN8800(FSC)
- Small/Medium Power application
- Bridge topology(half/full)
- Photo coupler with analog drive IC
- Device :HP3120
TLP250
26/45
IGBT Gate Drive Solutions-2
2
1
2
1
1
1
2
2
2
1
2 1
3
HVIC
1
3
2
2
HIGH
SIDE
2
HVIC
1
2
1
2
1
1
3
3
- Small power application
- Bridge topology(half/full)
- High voltage analog process
with bootstrap circuit
- Device : IR2112(IR)
?(Toshiba)
Harris
- Small Power application
- Bridge topology & High side switch
- High voltage analog process
with bootstrap circuit
- Device : IR2117(IR)
?(Toshiba)
Harris
27/45
IGBT Gate Drive Solutions-3
VCC1
1
2
VCC1
2
2
1
2
DRIVE IC
DRIVE IC
1
2
1
PROTECTION
1
2
1
3
PROTECTION
3
VCC2
1
VCC2
2
1
2
2
1
2
2
DRIVE IC
DRIVE IC
1
2
1
1
PROTECTION
3
PROTECTION
3
- Medium power application
- Bridge topology(half/full)
- Photo coupler + analog driver
with de-saturation network
- Device : Photo coupler +
MC33153(Motorola)
FAN8800(FSC)
- Medium/High Power application
- Bridge topology (half/full)
- Hybrid : photo coupler + discrete driver
One chip : photo coupler with analog driver
- Device : One chip, HP316J(HP)
Hybrid, EXB841(Fuji)
M57962(Mitsubishi)
28/45
Power Loss
= Switching Loss + Conduction Loss
▶ Switching Loss = Turn On Loss + Turn Off Loss
Vce
Ic
Vce(sat)
Off Time
Turn On
Time
On Time
Leakage Current
Turn Off
Time
Conduction Loss
Turn On
Loss
Turn Off
Loss
29/45
Off Time
Switching Test of IGBT
Inductive Load
Vge
+
G
Same
D.U.T.
Load
Ic
-15V
+
G
Rg
+ 15V
- 15V
D.U.T.
Vce
-
G
Half Bridge Test Circuit
Waveform
30/45
Question : What is a difference between CO-PAK and DISCRETE in IGBT?
Answer :
- CO-PAK IGBT have a parallel DIODE. freewheeling current can flow through a parallel DIODE.
- CO-PAK is commonly used in Bridge Topology and DISCRETE is used in Single Ended Topology.
CO-PAK IGBT => IGBT + DIODE in one PACKAGE
DISCRETE IGBT => Only IGBT
Application Example
CO-PAK
Discrete IGBT
M
-Forward SMPS
-Fly-back SMPS
-DC Motor Control
Transformer
- Induction Heating
31/45
- Lamp Ballast
- Induction Motor
Question : What is the Short Circuit Withstand Time(Tsc) ?
Answer :
- IGBTs are need to be protected from over current caused by Motor destruction or fault by noise.
Normally protection circuit has delay time(3~7uS),so IGBTs have to withstand certain time under
Short circuit condition
- Motor drive product (RUF-Series) is guaranteed at least 10uS for Tsc.
Control
&
Driver
M
Over Current Detect
&
Feedback
Delay time 3~7uS
SC
-->
Detecting abnormal condition -->
(Over Vce(sat),DC line current)
32/45
Feedback
-->
Gate Turn-off
(Soft Turn-off)
Question : What is a difference between RUF and UF/XF SERIES ?
Answer :
- IGBT application is mainly divided into two parts.
. One is the motor drive application(AC INDUCTION, SERVO,BLDC,SR MOTOR).
and the other is power conversion application(SMPS,UPS, CONVERTER).
- product line-up and characteristics are as follow.
Series
Application
Design key point
Characteristics
Example
RUF/RUFD Motor
Rugged,SC Rated
Vce(sat)=2.2V,tf=120nS
SGP5N60RUFD
UF/UFD
SMPS(<50khz),UPS
High performance
Vce(sat)=2.0V,tf=80nS
SGP23N60UFD
XF/XFD **
SMPS(>100khz)
High Speed
Vce(sat)=2.5V,tf=30nS
?????
NO Suffix
IH Cooker, Strobo
depend on System
depend on Device
SGL40N150D
SGR15040L
** : under developing
- The ordering system of IGBT Module is not classified as applications but is follows
US series for convenience.
But basic characteristics of Module is identified with that of Discrete IGBT RUF Series.
(Rugged,SC Rated)
33/45
Question : In place of MOSFET, IGBT can be used in power conversion
application?
Answer :
* IGBT can take the place of MOSFET in power conversion applications because of the same
gate drive method, voltage driving.
* Take care of the specific characteristic of your system before applying IGBT.
* Especially, in bridge topologies, do use the CO-PAK IGBT including diode.
1) LIMITATION OF FREQUENCY (in case taking place of MOSFET in several systems)
- RUF/RUFD : UP TO 30KHZ
- UF/UFD : UP TO 70KHZ (for hard switching)
- XF/XFD : UP TO 100KHZ
2) GATE DRIVE CIRCUIT
- Lower gate-resistance is possible in bridge topologies than that of MOSFET because
there is any limitation of gate-resistance which can destroying devices by dv/dt and
di/dt.
- Lower gate-resistance offers lower turn-on loss.
34/45
Question : What’s the IGBT’s Current Rating?
Answer :
* Most power devices (BJT, MOSFET... etc.) usually offers the current Rating at Tc = 25 ℃.
* In motor applications, Fairchild IGBT offers the current value defined at the condition of
Tc = 100 ℃ and in the power conversion applications, offers the value at Tc = 25 ℃.
* The current rating of Tc = 25 ℃ is about double comparing with that of Tc = 100 ℃.
SGP40N60UF(40A at Tc=25℃)
SGP20N60RUF(20A at Tc=100℃)
35/45
Same current rating
Question : What’s Turn off Energy (Eoff) ?
Answer :
* Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates
and how to design the thermal management.
* Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and
switching frequency of systems
* Eoff can provide more valuable information to designer than the turn-off falling time, tf.
Ic
Vce
Turn off Waveform
Turn off Power
(P=V*I)
Turn off Energy
(E= P(t) )
36/45
S/W Loss=on loss+off loss
=(Eon+Eoff) * f
Question : How come Voltage Ratings are 600V / 1200V ?
Answer :
* The voltage rating of IGBT is generally divided into two part, 220/240V 3-phase AC and 400/440V.
* For instance, there are 200V rating IGBTs for low voltage UPS, 1700V rating for 580 AC power
source, and 2200/3300V rating for several kind of railway systems.
* Industry needs 400/900/1500V rating IGBTs more and more.
1. IGBT VOLTAGE RATING ( Bridge Topology )
AC 220 --> DC (220*1.4=311V) -->AC variation +Design Margin ( 311*1.8 = 560V )
“
AC 380 --> DC (400*1.4=560V) -->
( 560*1.8 = 1008V )
2. IH APP IGBT VOLTAGE RATING ( Zero Voltage Switching )
AC 220 --> DC(220*1.4=311V) -->reverse voltage(311*3.14=980V) --> (980*1.5=1470V )
“
AC 110 --> DC(110*1.4=155V) -->
37/45
(155*3.14 =490V) --> (490*1.5=750V )
FAIRCHILD IGBTs Solution
We only recommend to use Fairchild IGBT to people who have used IGBT
made in some where else.
That’s the only how they can well the superior quality of Fairchild IGBT.
Fairchild offers...
Performance Curve
• High Performance
100
- Low Saturation Voltage
- High Speed Switching
- Low Turn-off Energy
Eoff [uJ/A]
80
• High Ruggedness
- Latch-Free Characteristics
- Short-Circuit Immunity
60
1200V @ Vce=600V
40
600V @ Vce=300V
20
• High Current
- Easy to Parallel Operation
- Positive Temperature Coefficient
38/45
0
2.0
2.1
2.2
2.3
Vce(sat) [V]
2.4
2.5
2.6
Ordering Information of IGBT
■ Discrete
S G P 10 N 60 R UF D
Built in FRD
UF : Ultra Fast S/W
R : Short Circuit Rated
Voltage Rating(X 10)
N : N-Channel
Current Rating
Package Type
P: TO-220
R: D-PAK
S: TO-220F
U: I-PAK
H: TO-3P
W: D2-PAK
F: TO-3PF
I : I2-PAK
L: TO-264
Device Type
G:IGBT
S: SEMICONDUCTOR
F: FAIRCHILD
39/45
Ordering Information of IGBT
■ Module
FM E 6 G 30 US 60
Voltage Rating(X 10)
Die characteristics
US : Ultra Fast & SC Rated
Current Rating
G: IGBT
Circuit Type
1 : Single
2 : Half Bridge
6 : 3Phase Bridge
7 : Complex
Module Type
Blank : Standard Type
E : Econo Type
C : Complex Type
FAIRCHILD Module
40/45
IGBT Line-up
High Performance IGBT
■ High Performance IGBT
Ic [A] @ Tc=100℃
Symbol
Vces [V]
1.2
600
600
SGR2N60UF
SGR2N60UFD
3
7
13
20
SGR6N60UF
SGP13N60UF
SGP23N60UF
SGP40N60UF
SGP6N60UF
SGS13N60UF
SGS23N60UF
SGS40N60UF
SGP6N60UFD
SGP13N60UFD
SGP23N60UFD
SGH40N60UFD
SGS6N60UFD
SGS13N60UFD
SGS23N60UFD
SGF40N60UFD
SGW6N60UFD
SGW13N60UFD
SGW23N60UFD
41/45
40
80
SGH80N60UF
SGH80N60UFD
SGL160N60UFD
■
Rugged IGBT
Symbol
Ic [A] @ Tc=100℃
Vces [V]
5
600V
SGP5N60RUF
SGP10N60RUF
SGW5N60RUF
SGW10N60RUF
1200V
SGH5N120RUF
600V
1200V
D-PAK
10
I-PAK
15
20
25
SGP15N60RUF
SGP20N60RUF
SGH10N120RUF
SGH15N120RUF
SGH20N120RUF
SGP5N60RUFD
SGP10N60RUFD
SGH15N60RUFD
SGH20N60RUFD
SGS5N60RUFD
SGS10N60RUFD
SGW5N60RUFD
SGW10N60RUFD
SGH5N120RUFD
SGH10N120RUFD SGH15N120RUFD SGH20N120RUFD SGL25N120RUFD
D2-PAK
I2-PAK
TO-220
42/45
TO-220F
30
50
SGH30N60RUF
SGH25N120RUF
SGH30N60RUFD
TO-3P
TO-3PF
SGL50N60RUFD
TO-264
■ Compact / PIM Type IGBT Module
Ic [A] @ Tc=100℃
Vces [V]
PKG Type
5
600V
1200V
10
15
20
25
30
50
FME6G10US60
FME6G15US60
FME6G20US60
FME6G30US60
Compact
FMC6G10US60
FMC6G15US60
FMC6G20US60
FMC6G30US60
FMC6G50US60
FMC7G10US60
FMC7G15US60
FMC7G20US60
FMC7G30US60
FMC7G50US60
FME6G5US120
FME6G10US120
FME6G15US120
FME6G20US120
FME6G25US120
Compact
FMC7G5US120
FMC7G10US120
FMC7G15US120
FMC7G20US120
FMC7G25US120
PIM
PIM
■ Molding Type IGBT Module
Vces [V]
600V
1200V
Ic [A] @ Tc=100℃
50
75
100
150
200
300
400
FM2G50US60
FM2G75US60
FM2G100US60
FM2G150US60
FM2G200US60
FM2G300US60
FMBH1G50US60
FMBH1G75US60
FMBH1G100US60
FMBH1G150US60
FMBH1G200US60
FMBH1G300US60
FMBH1G400US60
FMBL1G50US60
FMBL1G75US60
FMBL1G100US60
FMBL1G200US60
FMBL1G200US60
FMBL1G300US60
FMBL1G400US60
FM2G50US120
FM2G75US120
FM2G100US120
FM2G150US120
FM2G200US120
43/45
PKG Type
■ Camera Strobe Application
Symbol
Ic[A] pk
Vces [V]
400
PKG Type
130
150
SGR15N40L
(D-PAK)
SGR20N40L
(D-PAK)
SGU15N40L
(I-PAK)
SGU20N40L
(I-PAK)
D-PAK
I-PAK
FGS20N40L
(8-SOP)
8 -SOP
※ All of the Logic level Gate Drive
■ Induction Heating Application
Symbol
Vces [V]
900
1500
Ic[A]
15
40
SGF15N90D
(TO-3PF)
80
PKG Type
SGL60N90DG3
(TO-264)
TO-3PF
SGL40N150D
(TO-264)
FGL60N170D
(TO-264)
1700
1500V
60
SGL40N150
(TO-264)
44/45
FGL80N170D
(TO-264)
TO-264
IGBT Module Packages & Equivalent Circuits
FMBL series
FME6G series
FME6G series
FMC6G series
FMC7G series
FMC6G series
FMC7G series
FME6G series
FMBH series
FMC6G series
FM2G series
FMC7G series
FM2G series
FMBL series
FMBH series
45/45