Transcript Doping: Depositing impurities into Si in a controlled manner

Doping: Depositing
impurities into Si in
a controlled manner
Overview
 Diffusion vs Implantation
 Mechanism,Models
 Steps
 Equipment
Goal:
Controlled Junction Depth
Controlled dopant concentration and profile
P+
P+
Source
N “well”
Wafer (Substrate): P Type
Drain
Preferred
location of
maximum
concentration
need not be the
surface
Ion Implantation
Diffusion & Ion
Implanatation
Bombardment of
ions
SOURCE
Electric
Field
OXIDE
Ions
Wafer (Substrate)`
BLOCK
Junction is where
N=P
Can also be used
when doping N in N
Diffusion & Ion
Implantation
Diffusion
 Solid-in-solid
 high temperatures (1000 C)
 Distances covered are in um or nm
Diffusion
OXIDE
Wafer (Substrate)`
BLOCK
Mechanism , Models
 Substitutional (10-12 cm2/s)
 Interstitial replacement (10-6 cm2/s)
 Interstitial movement
 Substitutional preferred (better control)
 Au, Cu diffuse by interstitial mechanism
 B, P etc by substitutional mechanism
Two ideal cases
 Constant source, limited source
 Using Fick’s First & second law
 J = Flux
 D - Diffusivity of A in B
 N- Concentration
 x - distance
J  D
N
x
N
2 N
D 2
t
x
Models
 Constant Source
 Concentration at x=0 is
N (0, t ) NNo o
x
N (, t )  0
N ( x, t ) N o erfc(
2 Dt
 Limited source
 Dose Q = constant
 Approx by Delta Fn
)
N ( x, 0)  0
 Complementary Error Function
Q   N ( x, t )dx  2 N 0
0
0
x  0,t
 N ( x, t ) dx  Q
0
N (, t )  0
N ( x, 0)  0
 Total Dose Q

N
x

Dt

Q
N ( x, t ) 
e
 Dt

x2
4 Dt
Models
 Constant Source
 Concentration at x=0 is
No
Important Parameter : Dt
Impurity
Concentration
N0
species, temp and time
3
2
1
Distance from Surface
Models
 Limited Source
 Dose Q
Important Parameter : Dt
Impurity
Concentration
N0
Area under the curve is
constant
1
3
2
Distance from Surface
If you normalize, erfc
drops faster than Gaussian
Diffusivity

E
kT
D  D0 e
 Diffusivity
 Follows Arrhenius behavior
 Wafer goes through heating cycles many times in the
process
 Effective Diffusivity * time = sum (Diffusivity * time)
 Concept of thermal budget
 Dt total   Diti
D
i
1000
T
Diffusion
 Max absorption (at a given temp)
 Usually quite high
 Good for emitter and collector, but not for base
 Not all dopant can contribute to electron/hole near
solubility limit
 Solubility limit in the range of 10 20/cm3 at 1000o C
 Diffusion into silicon
 Faster on grain boundaries
 10 times in poly silicon
 Diffusivity in SiO2 usually very low (Segregation
occurs)
Junction Formation
N
Carrier
Conc
Impurity
Conc
Jn
P
Distance
from surface
Diffusion: Drive In: Dopant re
distribution
Deposited dopant must be pushed into Si
Re-distribution of dopant
Oxidation of exposed Si to protect
OXIDATION
Dopant Diffusion
*Dopant profile changes due to diffusion
* Also due to preference for Oxide/Silicon: N-type piles
up in Si, P-type depletes in Si
Diffusion: Steps
OXIDE
Dep
Diffusion
BLOCK
1.Pre Clean
To remove particles
Thin oxide grows
2.HF Etch
To remove oxide
Not too much!
3.Deposit (pre dep)
Deposit enough to be higher
than the solubility limit
4.Drive In
High temp to enable diffusion
inside Si
Also forms SiO2 (with high
5.Deglaze (HF Etch)
dopant concentration)
Oxide may act as dopant source in future
2-STEP diffusion (usual)
steps
Removing highly doped oxide may be
problem (for dry etch)
Diffusion: Dep:
schematic
Wafers are Horizontal
Gas
Flow
Better Uniformity
Less wafers per batch
Vertical
Poor Uniformity
More wafers per batch (or
can have smaller chamber)
Gas
Flow
Dummy wafers placed in the beginning & end
Doping: Gas phase
Dopant can be in Gas/Liquid/Solid state, but is typically carried
using N2 in gaseous form
Chamber
Carrier Gas (N2) +
Source
Reaction gas
*Carrier gas may be
bubbled through liquid
source
*Carrier gas may pass
over heated solid source
* inert gas can provide
volume to maintain laminar
flow
Doping: Gas phase
Reaction/Diffusion Limited
Phosphorus oxy chloride
4 POCl3  3 O2  2P2O5  6 Cl2
Phosphine
2 PH 3  4 O2  P2O5  3 H 2O
2 P2O5  5 Si  4 P  5 SiO2
Arsenic Oxide
2 As2O3  3 Si  3SiO2  4 As
Diborane
B2 H 6  3 O2  B2O3  3 H 2O
300o C
B2 H 6  6 CO2 
 B2O3  3 H 2O  6CO
Boron Tribromide
4 BBr3  3O2  2 B2O3  6 Br2 2 B O  3 Si  4 B  3 SiO
2 3
2
Solid phase
Solid Source
Slugs between wafers
Lower through put
Cleaning is issue (slugs can break)
Safer to handle(no toxic vapor at room temp)
Spin coating (with solvents)
Similar to photo resist coating
Cost of extra spin/bake steps
thickness variations
Doping: Solid phase
Phosphorous pentoxide
2 P2O5  5 Si  4 P  5 SiO2
Arsenic Oxide 2 As O  3 Si  3SiO  4 As
2 3
2
Antimony Tri Oxide
2 Sb2O3  3Si  3SiO2  4 Sb
Boron Trioxide
2 B2O3  3 Si  4 B  3 SiO2
Tri Methyl Borate (TMB)
2(CH 3O )3 B  9O2  B2O3  6 CO2  9 H 2O
900o C
Issues
Side diffusion
Increases with temperature/time
Limits the space between devices
Maximum dopant concentration is near surface
==> majority of current near surface
(Surface tends to have max defects)
==> less control
Dislocation generation (thermal drive in)
Surface contamination (dep)
Low dopant concentration and thin junction (small junction
depth) are difficult
At 0.18 um , junction depth is ~ 40 nm
At 0.09 um, junction depth may be 20 nm
Issues: Side diffusion
Side diffusion (Lateral Diffusion)
BLOCK
Wafer (Substrate)`
Diffusion
OXIDE
BLOCK
Example of Real systems :
*Hitachi-Vertron V
*1m x 3.5m x 3.3m
*200 mm wafer
*150 wafers at a time
* higher thermal budget,
* good control, uniformity
* high throughput
*Hitachi-Zestone VII
*2m x 3m x 3m
*300 mm wafer
*one wafer at a time
* lower thermal budget,
* better control, uniformity
* low throughput
Example of Real systems :
Protemp
Gettering
To remove unwanted impurities
 Try to get them to the back of
wafer
 Defects
 Ar implant
 Dep SiN/SiO2 (stress)
 Oxygen during crystal growth
(intrinsic)
 High Conc P on back of wafer
Measurement
 Sheet Resistance (average)
 Four point probe, VDP (Van der Pauw)
 Bevel
 Interference
 Dye
 SIMS
Diffusion: Summary
 Diffusion
 Temp, Time, Thermal budget
 Doping (more important for older nodes)
 Relevant for all nodes
 2 step (constant source, limited source)
 Solid/Liq/Gas
Ion Implantation
 “Somewhat similar” to Sputtering
 Dopant goes inside the silicon
 sputtering deposits on the surface
 Used for controlled doping
 concentration
 profile (depth)
 Equipment
 Mechanism
 Issues
 Summary
Equipment
Neutral
Beam Trap
and Beam
Gate
900
Analyzing
Magnet
Focus
Acceleration
Tube
Beam Trap
and Gate
Plate
Y-Axis
Scanner
wafer in
wafer
Process
chamber
Ion
Source
© Peter van Zant
1. Ion Source
 Gas or solid source (no liquid source)
 Solid heated to obtain vapor (P2O5)
 effectively gas source
 Mass flow meters (to control the flow better)
 Gas usually Fluorine based
AsF5 , BF3 , SbF3 , PF3 , PF5
 Ionization chamber
 low pressure (milli/ micro torr) to ionize and
minimize contamination
 heated filament (thermionic emission)
 positively charged ions created
2. Analyzing
 Selection, analyzing, mass analyzing, ion separation
 Similar to Mass Spectroscope
 Usually the second stage (before acceleration)
 Magnetic field to control the path
 Charge to Mass Ratio
 Some of the species from BF3 source B  , BF  , BF2
 Selection of B+
B
BF 
BF2 
3. Acceleration
 Acceleration needed for implantation
 Positive ions accelerated with ring anodes
 Energy range: 5 keV for low, 2 MeV for high
 High energy ==> high
throughput
 few seconds per wafer
Beam Current
 Medium current : 1 mA
 High current: 10 mA
 Current ~ Dose
 Beam Focus (magnetic/electric)
SOI
High
Current
Oxygen
100 mA
10 mA
Low Energy
1 mA
High
Current
Low
Current
keV
High Energy
MeV
4. Scanning
 Beam size ~ 1 sqr cm
 Wafer size 200 mm or 300 mm
 Issues:
 neutral atoms need to be removed because...
 dose calculated by current integrator
 Electrical (beam) scanning & Mechanical (wafer) scanning
Beam Scan:(medium current)
 beam moves outside the wafer for turn
 controlling XY plates may be destroyed by discharge
 Rotate wafer for uniformity
 Wafer scan: (high current)
Beam shuttering: (electrical/mechanical) turn beam off
when not on wafer
5. Target chamber
 End chamber
 low particle, high vacuum
 Wafer held on
 clamp (more particles) OR ESC (less particles)
 Anti-static devices on the chamber
 Integrate the current to measure dose
 For 2+ ions, divide by 2 and so on...
 Wafer charging:
 minimize by connecting wafer to ground (with a charge
counter)
 dielectrics may get damaged
 use flood gun to provide electron (and count it in
measurement)
Mechanism
Electrons attract the +vely charged ions
Nuclei repel the +vely charged ions
Inelastic collision:
Electron (ionization)
Nuclear (nuclear reactions)
Elastic collision
Electron
Nuclear (atom substitution)
 At low energy Nuclear collisions predominant
 At high energy electronic collisions predominant
 Variation in ‘stopping cross section’
 Gaussian profile expected (projected range Rp)
Implantation
 Mask with Photoresist or oxide
 resist for medium and low energy, moderate dose
 high energy/high dose: increase in temp
 Resist re-flow
 Cross link (for organics)
 less soluble (stripping an issue)
 Faraday Cage
 Retain secondary electron from wafer
 Otherwise, wafer under dosed
-Ve Bias
e-
Issue: Transverse Straggle
implant
OXIDE
Gaussian
BLOCK
Transverse Straggle
(Diffraction)
Even in implantation, dopants present in lateral direction
Channeling
Some ions
will move
through
“channels”
without
experiencing
nuclear
or electron
collision for
a “long” time
==> No Gaussian Profile
Channeling
1. Hold the wafer
at an angle (~ 8 degree)
BLOCK
==> increase transverse
straggle(called undercut)
Also causes
“shadow”
==> Too much angle is
also a problem
Shadow
Undercut
Channeling
2. Dep amorphous
material on the top
implant
OXIDE
It has to be very thin
and not stop ions
BLOCK
3. Damage top
of wafer and make it
amorphous (eg high
energy silicon implant)
Channeling
4. Increase temperature
==> reduce channel cross section
Channeling critical angle ~ (Z/E) 1/2
==> Low energy implants more likely to channel
TED
 Transient Enhanced Diffusion
 Damage during implantation
==> point defects (vacancies)
 interstitial silicon atoms
 reduced during anneal
 Channel dopant diffuse to surface
==> VT modification
©Solid State Technology
RTA
 Anneal to heal the damage
 Diffusion during anneal an issue
 High temp repair is faster than anneal
 Repair energy barrier 5 eV, diffusion barrier 3 or 4 eV
1. Adiabatic (laser, heats surface , < micro sec)
 profile control difficult (not used)
2. Thermal flux ( micro to 1 sec)
 laser, ebeam, flash lamp
 surface+bulk heating
 rapid cooling ==> point defects
3. Iso thermal (W-Halogen lamp)
 30 sec (1100 C)
Diffusion vs Ion Implantation
Dep+Diffusion: depends on chemical nature and solubility
Implantation: on energy of ion beam
Expensive
Better Control of junction depth, dose, profile
Less ‘transverse straggle’