Transcript Initial Millimeter-Wave Low Noise Amplifier Results from

IBM Research
Silicon Millimeter Wave Integrated Circuits
for Wireless Applications
B Gaucher, M Soyuer, and M Oprysko
IBM Research
Yorktown Heights, NY 10598
| Communication Technology | Nov. 18, 2004
© 2004 IBM Corporation
IBM Research
Outline
 Silicon is ready for mmwave frequencies
 Millimeter wave applications
 Applications
 Challenges
 Lets look at 60 GHz WLAN as an example
 Exemplary silicon circuits
 Looking at higher frequencies
 Exemplary circuits (VCOs, LNAs, PA’s…)
 And what can we expect silicon mmwave ICs to cost ?
 Summary and concluding remarks
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Evolution of SiGe HBTs
 Significant improvement in Ft/Fmax with each generation
CMOS
lithography
0.13um
1.2v
8HP
mmwave
200/180GHz/1.7V
200/250GHz
7HP
0.18um
1.8v
120/100 GHz/1.8V
120/125GHz
Radar (24 GHz Automotive)
Wirleline (40 GbpsOC768)
wireless
6HP
0.25um
2.5v
47/60 GHz/3.3V
0.5/0.35um
3.3, 5v
0.5um
3.3v
wireless
Legend
High Speed NPN Ft /Fmax (MAG)/ BVceo
Ft/Fmax (Unilateral Gain)
5HP
50/50 GHz/3.3V
1997
1998
1999
2000
2001
2002
2003
2004
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Increasing speed of silicon technologies
“…if it can be done in silicon; it will be done in silicon…”
Focus:
on large V swing
High power
Small scale integration
10 & 40 Gbps hardware shipping
1st designs targeting 80 to100 Gbps
1st designs targeting mmwave
Medium scale integration
1 & 10 Gbps hardware shipping
1st publications targeting 40 Gbps
1st publications targeting 60GHz
Large scale integration
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Outline
 Silicon is ready for mmwave frequencies
 Millimeterwave applications
 Applications
 Challenges
 Lets look at 60 GHz WLAN as an example
 Exemplary silicon circuits
 Looking at higher frequencies
 Exemplary circuits (VCOs, LNAs, PA’s…)
 And what can we expect silicon mmwave ICs to cost ?
 Summary and concluding remarks
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
GigaPhy Communications
IEEE Standards Headed Toward 60GHz?

Data rate trend vs. history
802.15.3 has the
potential to continue the
wireless chase, UWB,
60 GHz
WLAN/WPAN may
extend its speed
advantage
802.11n is addressing this
space
WLAN may go with 60GHz
given it has 5GHz of
bandwidth, world wide
10000
Not likely to see real
480-1000Mbps HW until
>2006.
802.15.3
1000Base-T
60 GHz
USB2.0
802.11n
UWB
100Base-T
100
802.11a
10Base-T
10
USB1.1
Ethernet
802.11b
USB
WLAN
WPAN
BT 2.0
1

10GBase-T
1000
Speed (Mbps)

1Base-T
0.1
1975
USB1.0
802.11
BT1.0
1980
1985
1990
1995
2000
2005
2010
Year
Drivers include: Frequency allocation WW, bandwidth, capacity, power, cost, reliability
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Commercial Apps
Commercial
 802.11x Markets
Military
Millimeter Wave Applications
 Military Markets (38, 60, 94 GHz)
 WLAN
 WPAN




Automotive Radar at 77/79 GHz
Telecommunications backhaul
Consumer
Wireless Last Mile …
Integrated
Wireless
 Future Combat systems
 Secure communications
 Satellite Communications
 Military phased array markets
 Reconfigurable, software definable
systems
Military Apps
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
GigaPhy Communications
High-Speed Wireless Need Driven by Consumer Apps
 Consumer electronics
Low power, short range
100-500Mbps link
 Replacement for 1394 Fire
Wire and other cables
 Potential for 150M consumer electronic
devices, such as TVs, home automation
camera/camcorder, game consoles, music
players etc. by 2009.
Computer applications
 Computer & peripherals
 Replacement for USB,
monitor cable, parallel ports
and other cables –
 Potential for 100M computers and peripherals
by 2009.
Consumer electronic applications
 Other application needs
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Key Challenges for Silicon Millimeter-Wave Circuits
 Lossy silicon substrate  poor isolation, lower Q components.
 Need for a predictive design kit such that 1st pass success is achievable.
 Accurate transmission line and transistor models.
 Accurate parasitic extraction (distinction between device and parasitic blurred).
 Silicon CAD tools (e.g. Cadence with EM simulation).
 Need to yield circuits in the silicon environment  density requirements
on metal, poly, and active layers. Effect on RF performance of passives?
 Achieving very high levels of integration in silicon while maintaining
MMW functionality.
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
The Challenges of Test:
On-Wafer mmWave Circuit Measurements
Power Characterization
(50-75GHz, 75-90GHz):
Challenges at MMW frequencies:
From
VNA
To
VNA
- on-wafer characterization
- cable losses
- differential measurements
Input
Balun
Noise Characterization
(50-75GHz, 75-90GHz):
Low Noise
Downconverter
Output
Balun
S-Parameters
(40MHz to 110GHz):
110GHz VNA system
diplexers
Noise
Source
to Noise
Figure Meter
MMW modules
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
GigaPhy Communications
60GHz Link Budget
Parameter
Value
Tx power at
antenna
+17dBm
Tx antenna gain
+6dBi
Person
penetration loss
(OLOS only)
20dB
Polarization loss
3dB
Rx antenna gain
+6dBi
Rx noise figure at
antenna
8dB
Modulation
QPSK
LOS:
OLOS:
line-of sight
obstructed (by person) LOS
1Gbps@20M
1Gbps@3M
Spectral efficiency 0.25bps/Hz
Channel coding
Reed Solomon
Es/No
1dB (~1e-5
BLER)
Receiver
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
An Example of a Conventional Architecture Using SiGe
Heterodyne Tx
 Key Building
Block Circuits
 Low-Noise
Amplifiers
PA
+
PO=+10dBm
x3
90°
VCO
500MHz
÷2
÷N
 Mixers
 VoltageControlled
Oscillators
 Power
Amplifiers
÷N
Direct-Convert Rx
x3
LNA Pre-Amp
90°
500MHz
Gain=17dB Gain=16dB
NF=15dB
NF=4 dB
Gain=33dB, NF=6dB
Circuits built & tested
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Key 60 GHz Circuits Already Built and Tested:
Power Amplifier
Low Noise Amplifier
Icc = 6 mA
Vcc = 1.8 V
NF (at 60GHz) = 3.3-3.7 dB
NF (at 63 GHz) =4.2-4.6 dB
Mean NF = 3.7 dB
20
18
16
14
Gain
dB
12
Gain = 10.8 dB
P1 dB = 11.2 dBm
Psat = 16.2 dBm
130 mA at 2.5V
10
8
6
4
NF
2
058
59
60
61
62
63
Frequency (GHz)
64
65
Direct Conversion Mixer
Voltage Controlled Oscillator
• VCO Meas’d performance
•-102 dBc/Hz @ 1MHz
•8mA at 3V
•Pout -11 dBm
-102dBc/Hz @ 1MHz
Output Spectrum / Phase Noise



First Gilbert-cell mixers at 60 GHz.
Highest integration level for any technology at 60 GHz.

80 transistors

43 transmission lines or inductors
Meas’d performance comparable or exceeding GaAs

NF (< 15 dB),

conversion gain (> 16 dB),

Vcc = 2.7V

power (150 mW “core”)
ISSCC 2004
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
World’s first 60GHz silicon direct down conversion mixer
 First Gilbert-cell mixers at 60 GHz.
 Highest reported integration level
for any technology at 60 GHz.
 80 transistors
1.9mm x 1.65mm
 43 transmission lines or inductors
 Performance comparable or
exceeding GaAs
 NF (< 15 dB),
Antenna
Buffer
LNA1
(Different Chip)
 conversion gain (> 16 dB),
 power (150 mW “core”)
LO Pilot
Input
19.67 21.33 GHz
LNA2
(Active Balun)
Gilbert
Mixers
Differential BranchLine Directional
Coupler
Buff
er
Buffer
Frequency
Tripler
Termination
Resistor
Buffer
60-GHz Direct-Conversion Quadrature Downconverter
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
What are the next steps ?
 Make mmwave components look to users just like other
low frequency semiconductor components
 Broaden the number of potential users worldwide
 A new generation of mmwave applications
 Demonstrating
 Monolithic Tx chip and
 Monolithic Rx chip
 Low cost package which does not require end users to
have sophisticated mmwave test and packaging skills
 Plastic package
 Chip
 Antenna
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
GigaPhy Communications
60-GHz Receiver and Transmitter
Receiver
IF Mixer
Image-reject
LNA
BB Amp
IF Amp
I
÷2
Input
59-64 GHz
Baseband
DAC
x3
Q
÷ 32
LPF
CP
PLL
PFD
Transmitter
PA
I
x3
Output
59-64 GHz
÷2
Image-reject
Driver
ADC
Q
IF Amp
IF Mixer
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Summary of Transceiver Specifications.
Target
Simulated
RF frequency range
59GHz-64GHz
59GHz-64GHz
IQ balance
+-2 degrees, 1dB
TBD
Rx image suppression
20dB
25-30 dB
Tx carrier suppression
25-30dBc
TBD
Tx image suppression
20dB
25-30 dB
Rx noise figure (at LNA)
<6dB
5.5-7.5 dB
Rx P1dB (LNA on/off)
-30dBm / -15dBm
-27dBm from LNA
-31 dBm for whole RX
Output power (P1dB at PA)
>10dBm
16dBm w/ PA
8-10 dBm w/ Driver
Phase noise (incl. tripler)
-88dBc/1MHz
-120dBc Noise floor
-92 dBc/1MHz (VCO only at
3XVCO)
TBD after tripler
Power consumption
-
RX: 330 mW (inc. PLL)
TX: 430 mW (inc. PLL)
PA: 360 mW
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
60-GHz Transmitter Layout
PA
Driver Amp Mixer & IFVGA
Tripler
Out
PLL
IF Mix
Baseband Inputs
Size: 4.0 x 1.5 mm2
60-GHz Receiver Layout
Mixer & IFVGA
Tripler
IN
LNA
IF Mix
PLL
RCLK
BB Amp
BB Amp
Baseband Outputs
Size: 3.4 x 1.6 mm2
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
GigaPhy Communications
Concept of Fully Integrated MMW Transceiver
IBM SiGe technology with >200GHz fT/fmax
 highly integrated silicon based MMW transceiver ICs
low-cost package
including fully
Quarter
Sizedintegrated MMW
transceiver and
Transceiver
antennas
small wave length (e.g.
~ 5mm @ 60GHz)
 antenna in package
 no MMW signal off
or on package
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Outline
 Silicon is ready for mmwave frequencies
 Millimeter wave applications
 Applications
 Challenges
 Lets look at 60 GHz WLAN as an example
 Exemplary silicon circuits
 Looking at higher frequencies
 Exemplary circuits (VCOs, LNAs, PA’s…)
 And what can we expect silicon mmwave ICs to cost ?
 Summary and concluding remarks
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
…and what can we expect silicon mmwave ICs to cost ?
 Keys to driving cost…look at 802.11x WLANs as an example
 Establishing an industry standard (802.11b)
 Generating volumes:
 Chip sets “everywhere” (PCs, enterprise & SOHO access points, adaptor cards, etc….)
 “riding” the silicon cost curve
 Silicon integration (1st in SiGe, then in CMOS)
802.11b Chip Set
(chip set includes RF transceiver, PA, BB, MAC)
ASP ($)
150
100
50
0
1996
1998
2000
2002
2004
2006
2008
YEAR
 Mmwave ICs in SiGe can be expected to follow similar historical trends !
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Outline
 Silicon is ready for mmwave frequencies
 Millimeter wave applications
 Applications
 Challenges
 Lets look at 60 GHz WLAN as an example
 Exemplary silicon circuits
 Looking at higher frequencies
 Exemplary circuits (VCOs, LNAs, PA’s…)
 And what can we expect silicon mmwave ICs to cost ?
 Summary and concluding remarks
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
….this is only the beginning !
 New transistors and passives open up bands to 150 GHz !
CMOS
lithography



Imaging
Wireless measurements
????
Next Gen Quasi-optical Band
Target 300GHz/TBD
0.13um
1.2v
8HP
mmwave
200/180GHz/1.7V
200/250GHz
7HP
0.18um
1.8v
120/100 GHz/1.8V
120/125GHz
Radar (24 GHz Automotive)
Wirleline (40 GbpsOC768)
wireless
6HP
0.25um
2.5v
47/60 GHz/3.3V
0.5/0.35um
3.3, 5v
0.5um
3.3v
wireless
Legend
High Speed NPN Ft /Fmax (MAG)/ BVceo
Ft/Fmax (Unilateral Gain)
5HP
50/50 GHz/3.3V
1997
1998
1999
2000
2001
2002
2003
2004
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Summary & concluding remarks
 “…anything that can be done in silicon; will be done in silicon…”
 SiGe enables low power & high level integration not possible in III-V technologies
 We have demonstrated key mmwave building block circuits in SiGe with
performance suitable for enabling the 60 GHz ISM band
 highest integration direct-conversion mixer
 high performance V-band LNAs
 power amplifiers
 Historical silicon “take down” curves suggest attractive costs for mmwave
transceivers based on
 Silicon integration
 volume growth
 We are witnessing the rebirth and renaissance of millimeter wave technology
and applications enabled by a new generation of silicon
60 GHz Millimeter wave Program | Communication Technology Nov. 18, 2004 | IBM Research
© 2004 IBM Corporation
IBM Research
Thank you !
Communication Technology | Nov. 18, 2004 |
© 2004 IBM Corporation