Transcript 15-03-0468-00-003a-dcn-15-03-0468-00

November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)
Submission Title: [60 GHz circuit design in silicon to enable markets]
Date Submitted: [11 November, 2003]
Source: [Brian Gaucher] Company [IBM TJ Watson Research]
Address [1101 Kitchawan Rd. Yorktown Heights, NY 10598]
Voice:[914-945-2596], FAX: [914-945-4134], E-Mail:[[email protected]]
Re:
Abstract: [Silicon technology has matured to a point where fully integrated radio front ends at millimeter
wave (60GHz) frequencies can be designed in silicon. Example 60 GHz silicon circuits are shown, as well
as a conceptual fully integrated transceiver in a single low cost package, including antennas. This
enablement in silicon approach can reduce the cost volume barrier to help enable markets quickly.]
Purpose: [Information to be used to help demonstrate the validity of economical, very small, low power
WPAN solutions.]
Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for
discussion and is not binding on the contributing individual(s) or organization(s). The material in this
document is subject to change in form and content after further study. The contributor(s) reserve(s) the right
to add, amend or withdraw material contained herein.
Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE
and may be made publicly available by P802.15.
Submission
Slide 1
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
60 GHz circuit design in silicon to enable
markets
Submission
Slide 2
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Agenda
• Introduction
• SiGe Technology: Roadmap, Characteristics, &
Performance
• Extending SiGe into the mmWave Application
Space
• Future direction for mmWave solutions
• Conclusion
Submission
Slide 3
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Trends
• Unlicensed 60GHz band available
– 5 GHz of bandwidth !
– In principle, allows data rates of 100s of megabits to gigabits
per second
• Current implementations of 60GHz front ends
– based on AlGaAs/InGaAs heterojunction technologies
– low levels of integration and high costs
• Next Generation IBM SiGe BiCMOS could enable low cost,
monolithic RF front-end transceiver at 60 GHz
– IBM's SiGe8HP (>200 GHz ft/fmax)
• If successful, this would make an entire new unlicensed frequency
band commercially viable
– Personal Area network applications (PAN)
– Point-to-Point applications
– Radar applications
• Significant implications for Silicon solutions
– Lower power, lower cost, higher integration– Overcome the “cost/volume” hurdle
Submission
Slide 4
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Evolution of SiGe HBTs
• Significant improvement in Ft/Fmax with each generation
Target 300GHz/TBD
Next Gen
Technology ft/fmax
8HP
200/180GHz/1.7V
200/250GHz
7HP
120 GHz DME
77GHz radar
60 GHz mmwave
WPAN
40 Gbps Sonet
120/100 GHz/1.8V 24 GHz Vehicular radar
120/125GHz
6HP
47/60 GHz/3.3V
5HP
50/50 GHz/3.3V
5 GHz WLAN
Technology
Submission
Slide 5
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Increasing speed of silicon technologies….
• As silicon speeds increase, applications previously the
domain of III-V compound semiconductors are captured
Focus:
on large V swing
High power
Small scale integration
10 & 40 Gbps hardware shipping
1st designs targeting 80 to100 Gbps
Medium scale integration
1 & 10 Gbps hardware shipping
1st publications targeting 40 Gbps
Large scale integration
Submission
Slide 6
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Silicon proof point circuits and architectures have been
demonstrated in the mmWave frequency range
Amplifier for 60 & 77GHz
VCO for 60 & 77GHz
Submission
LNA for 60 & 77GHz
Direct conversion downconverter for 60 GHz
Slide 7
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
World’s first 60GHz silicon direct down conversion mixer
• Most complex Si-based radio
circuits ever reported at 60 GHz.
• First Gilbert-cell mixers at 60 GHz.
• Highest reported integration level
for any technology at 60 GHz.
– 80 transistors
– 43 transmission lines or inductors
• First-pass working hardware using
a Cadence design kit not optimized
for millimeter-wave radio work
• Performance comparable or
exceeding GaAs
– NF (< 15 dB),
– conversion gain (> 16 dB),
– power (150 mW “core”)
Submission
1.9mm x 1.65mm
Antenna
Buffer
LNA1
(Different Chip)
LO Pilot
Input
19.67 21.33 GHz
LNA2
(Active Balun)
Gilbert
Mixers
Differential BranchLine Directional
Coupler
Buff
er
Buffer
Frequency
Tripler
Termination
Resistor
Slide 8
Buffer
60-GHz Direct-Conversion Quadrature Downconverter
B.Gaucher IBM
November 2003
doc.: IEEE 802.15-15-03-0465-00-003a
Concept for a packaged 60GHz transceiver
• Fully
integrated
including
antenna
Standard
plastic
package Mold
Signal
Propagation
Wirebond
C4-Ball's
Wirebond Pad
Tx/Rx Flip-Antenna
• Low cost
package
Filter Structure
MIX
PA
Q-signal
90
VCO
I-signal
Al
um
in
a
• Low
frequency
I/O
MIX
LNA
MIX
Q-signal
I/Q
90
VCO
I-signal
PLL
MIX
I/Q
SiGe-Chip
QFN-Package
Package Pin
Submission
Slide 9
B.Gaucher IBM