Transcript WSU results from visit by david 12-16-2015

humidifier
RH sensor
Recording oscilloscope
absolute Thz signal
lock-in 1
IN reference from 1kHz 101GHz
driver
IN signal
from THz
Schottky
detector?
IN reference from 101GHz driver 1 kHz
OUT to oscilloscope and lock-in 2
IN CH1 from lock-in 1
absolute THz signal
IN signal
from THz
Schottky
detector.
Function generator
square wave 0-10V
Synch pulse OUT to lock-in 2
Locked-in delta Thz signal
OUT square wave -10 to +10V
output to GFET Vgs and to
oscilloscope
lock-in 2
IN reference from fuctionon generator
square wave synch pulse at 1Hz
IN signal from lock-in amp 1
IN CH2 from 1Hz square wave
function generator (OUTPUT +/10V)
Why is the CH2 square wave
function ~18.6V? We used
0-10V amplitude from
function generator. +/- 10V square wave
can be
What is the significance of This
due to the noise.
CH1 frequency number seen
at bottom of oscilloscope
~+/-10V from
trace? It varies between
function
0.3Hz and 2.1Hz over the 35
tracings we saved through
generator
the day.
What is the significance of
the phase relationship
between the square
function 0-10V and the THz
transmission signal? Elliott says none
The ‘absolute’ 101GHz signal is
seen in lock-in amp 1 and is from
Schottky detector. What frequency
is this lock-in amp 1 locked to?
1kHz. It is the generator
modulation frequency of the Gunn
diode driver (101GHz at 1kHz)?
~10mV
I wrote down lock-in amp 2 readout = 11.6mV this seems to agree with this tracing right?
rinse 400uL
ddH2O blow
add water
100uL
blow off
add buffer 100uL
blow off
add 100uL of
0.1nM DNA O
dashes indicate
data points taken
at 93% RH,
condensing on
GFET
rinse 400uL
ddH2O blow
cut THz power by ‘exactly ½’
to stop overflow of lockin1
values after this point are
normalized by 2x multiply
rinse 400uL
ddH2O 15mins
blow
add 100uL of
2nM DNA O
Dashes indicate data
points taken at 20% RH.
Condensed water rapidly
evaporates from GFET
(surprisingly quickly)
all delta THz numbers have been scaled to fit on plot, delta THz (lockin 1Hz) ranges from 9.9 – 26mV while ‘absolute’ THz is shown uncorrected in this plot in V
All of these voltages are arbitrary representations of THz transmission
08262015-1 silicon oxide, OTS, no benzimidizole
measured at WSU 12-16-2015 pre-expt. and 12-17-2015 post expt.
Each Vgs sweep is forward only, colors represent sweeps
taken at the times indicated below charts.
before 12-17-2016 experiment
after experiment
0.000025
0.000025
0.00002
0.00002
Vds = 0.05V
Ids (amps)
Ids (amps)
Vds = 0.05V
0.000015
0.00001
0.000005
0.000015
0.00001
0.000005
0
0
0
10
1006
20
1007
30
1009
40
1010
Vgs (volts)
50
1011
1012
60
0
10
1747
20
1750
1752
30
1754
40
1756
Vgs (volts)
50
1758
60
1800
08262015-1 silicon oxide, OTS, no benzimidizole
measured 1-16-2016
With Vds = 0.0V, Vds shorted: Igs at 20Vgs <1nA
Igs at 40Vgs <1nA
So when measured at stationary Vgs, gate resistance >20Gohm
When measured at sweeping Vgs (chart below left), Igs was still small but fluctuated +/- 300nA around 0.0A
Each Vgs 1V step takes ~250msec
solid lines fwd. sweep
dashed lines rev. sweep
sweep number within each set
1-blue
2-cyan
Vds = 0.1V
gate current, fluctuations
but no hysteresis in fwd vs
rev sweeps
Ids (amps)
gate leak or Igs (amps)
Vds = 0.05V
Vds = 0.01V
Vds = 0.0(Vds shorted)
Vds = 0.001V
Vds = 0.0(Vds shorted)
Vgs (volts)
Vgs (volts)
10272015-3 silicon oxide + 10nm
With Vds = 0.0V, Vds shorted: Igs at 20Vgs <1nA
Igs at 40Vgs <2nA
So when measured at stationary Vgs, gate resistance >20Gohm
When measured at sweeping Vgs (chart below left), Igs was still small but fluctuated up to +150nA on forward
sweep and -150nA on reverse sweep, hysteresis shown in inset of gate current chart
aluminum oxide, no OTS, no benzimidizole
measured 1-16-2016
Each Vgs 1V step takes ~250msec
solid lines fwd. sweep
dashed lines rev. sweep
sweep number within each set
1-blue
2-cyan
gate current
hysteresis seen in
fwd vs rev sweeps
Ids (amps)
gate leak or Igs (amps)
Vds = 0.1V
Vds = 0.0
(Vds shorted)
Vds = 0.05V
Vds = 0.001V
Vds = 0.01V
Vds = 0.0(Vds shorted)
Vgs (volts)
Vgs (volts)
ALTHOUGH QUANTITATIVELY DIFFERENT, THESE 2 GFETS BEHAVE, QUALITATIVELY, VERY SIMILARLY
Each Vgs 1V step takes ~250msec
solid lines fwd. sweep
dashed lines rev. sweep
sweep number within each set
1-blue
2-cyan
Phi-08262015-1 silicon oxide, OTS, no benzimidizole
Phi-10272015-3 silicon oxide + 10nm
measured 1-16-2016 THIS DEVICE HAD BEEN TREATED WITH DNA
AND BUFFER AND MEASURED AT WSU 12-17-2015
aluminum oxide, no OTS, no benzimidizole
measured 1-16-2016 THIS DEVICE IS AS
DELIVERED BY PHI
Vds = 0.05V
Ids (amps)
Ids (amps)
Vds = 0.05V
Vgs (volts)
Vgs (volts)
3
2
add 100uL of
0.1nM DNA O
1.8
rinse 400uL
ddH2O blow
93% condensing
on GFET
2.5
1.6
add buffer 100uL
blow off
add water
100uL
blow off
1.2
rinse 400uL
ddH2O blow
1.5
1.4
add 100uL of
2nM DNA O
rinse 400uL
ddH2O 15mins
blow
1
relative humidity
2
cut THz power
by ‘exactly ½’ to
stop overflow
of lockin1
0.8
1
0.6
0.4
0.5
0.2
0
0
1150 1170 1190 1210 1230 1250 1270 1290 1310 1330 1350 1370 1390 1410 1430 1450 1470 1490 1510 1530 1550 1570 1590 1610 1630 1650 1670 1690 1710 1730 1750
THz - Vgs unplugged V(AU)
THz - Vgs sq wave 0-10V@1Hz (V AU)
delta THz @ 1Hz lockin(mV AU) on scale
RH on scale
all delta THz numbers have been scaled to fit on plot, delta THz (lockin 1Hz) ranges from 9.9 – 26mV while ‘absolute’ THz is shown uncorrected in this plot in V
20% rapidly
evaporates from GFET
(surprisingly fast)
dashes indicate
data points taken
at 93% RH,
condensing on
1.8 GFET
3
2
rinse 400uL
ddH2O blow
2.5
add 100uL of
0.1nM DNA O
rinse 400uL
ddH2O blow
1.6
rinse 400uL
ddH2O 15mins
blow
2
add buffer 100uL
blow off
add water
100uL
blow off
cut THz power by ‘exactly ½’
to stop overflow of lockin1
values after this point are
normalized by 2x multiply
add 100uL of
2nM DNA O
1.5
1.4
1.2
1
0.8
1
0.6
0.4
0.5
0.2
0
1150 1170 1190 1210 1230 1250 1270 1290 1310 1330 1350 1370 1390 1410 1430 1450 1470 1490 1510 1530 1550 1570 1590 1610 1630 1650 1670 1690 1710 1730
THz - Vgs unplugged V(AU)
THz - Vgs sq wave 0-10V@1Hz (V AU)
delta THz @ 1Hz lockin(mV AU) on scale
RH on scale
all delta THz numbers have been scaled to fit on plot, delta THz (lockin 1Hz) ranges from 9.9 – 26mV while ‘absolute’ THz is shown uncorrected in this plot in V
All of these voltages are arbitrary representations of THz transmission
Dashes indicate data
points taken at 20% RH.
Condensed water rapidly
0
evaporates from GFET
(surprisingly quickly)