Transcript Folie 1

Status of DSSD Sensors
Thomas Bergauer (HEPHY Vienna)
Belle-II Meeting Nov 09
19. Nov. 2009
Overview
• Prototype DSSDs have been ordered at
– Hamamatsu (rectangular shape)
– Micron Semiconductor (wedge shape)
• I will present status of both orders
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
2
20
[cm]
10
SVD Layout
layers
4
6
6
5
4
4
6
4
6
Layer
6
-20
4
6
4
6
-10
4
6
4
6
4
6
6
6
3
0
-30
4
6
4
6
4
6
4
6
6
6
0
10
20
30
40
[cm]
#
Rect.
Rect.
Wedge
APVs
2
(122.8 x 38.4
mm , 160 /Sensors
50 um pitch)
LaddersRectSensors
Sensors
2
z APVs
Rect (122.8
mm , 240 / 75 um pitch)
rphi APVs
[50μm] x 57.6[75μm]
z APVs
rphi APVs
z APVs
rphi APVs
17
2
Wedge (122.8
x
57.6-38.4
mm
0
68 , 240 / 75..50
17 um pitch) 850
5
14
0
42
14
560
4
10
0
20
10
300
3
8
16
0
0
192
49
16
130
41
1902
Sum:
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
3
Hamamatsu Order
RECTANGULAR SENSORS
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
4
Hamamatsu Status
• HPK decided to re-start DSSD production
– Not only for Belle. They have been pushed also
from other interested (Japanese) parties
• KEK was in contact with Japanese sales
representative and engineer
• Beginning of Oct. 2009: Mask Production
– Unfortunately without the possibility to add test
structures
• Delivery: March 2010 (<=30pcs.)
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
5
Rectangular DSSD Layout
• Overall Size:
– 124.88 x 59.6 mm
• P-side
– 768 long readout strips
– 75 micron readout pitch
– 37.5 micron strip pitch
(one intermediate strip)
– Second row of bonding pads
compatible to Origami bonding
scheme
• N-side
– 512 short readout strips
– 240 micron readout pitch
– 120 micron strip pitch
(one intermediate strip)
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
6
Rectangular DSSD Specifications
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
7
Micron Order
WEDGE SENSORS
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
8
Micron Semiconductor Ltd.
• Company in Sussex, England, founded 1983
• Contact persons:
– Colin Wilburn (Director)
– Susan Walsh (Designer)
• Financial:
Item
Quantity
Masks
Unit Price
16
2,200
35,200
1
1,800
1,800
DSSDs
10
2,000
20,000
Shipping boxes
10
200
2,000
5
200
1,000
Probe card
Shipments
Sum €
19. Nov. 2009
Sub Total
Thomas Bergauer (HEPHY Vienna)
60,000
(eq. 8M¥)
9
Wedge DSSD specifications
•
•
•
•
•
•
Resistivity: 8 kΩcm (n-type); crystal orientation <100>
Thickness: 300 +/- 10 microns
Full Depletion (FD): 40 volts typical; 70 volts maximum
Operating Voltage: FD to 2x FD
Minimum Breakdown Voltage (10uA): 2.5x FD
Total drain leakage current (20 degrees C): 2uA typical; 10uA
maximum (at 50% rH)
• Polysilicon resistor 15 +/- 5 megohms
• Coupling capacitor > 1.2 pF / cm strip length and per microstrip
width (100pF typical)
• Interstrip resistance 100MΩ min, 1 GΩ ohm typical (P-Side);
10 MΩ min, 100MΩ typical (N-side)
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
10
Micron Wafer Layout (to be confirmed)
Quadratic baby sensors 2,3,4
p-side: 512 strips
50 µm pitch
1 interm. strip
n-side: 256 strips
100 µm pitch
0 interm. strip
different p-stop patterns
1) atoll p-stop
varying distance from strip
3 different GCDs
for the n-side
Main sensor
p-side: 768 strips
75-50 µm pitch
1 interm. strip
n-side: 512 strips
240 µm pitch
1 interm. strip
combined p-stop
2) conventional p-stop
varying width
3) combined p-stop
varying distance from strip
Teststructures
for p-side
Baby sensor 1
p-side: 512 strips
50 µm pitch
1 interm. strip
n-side: 512 strips
100 µm pitch
1 interm. strip
atoll p-stop
Teststructures
for n-side
(no GCD)
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
11
Open Points: Guard Ring Design
• We proposed single guard ring
with outer n-ring (n_sub)
similar to HPK design
– 800 micron size
• Micron wants to implement
their own multi-guard ring
design
–
–
–
–
19. Nov. 2009
Three guard rings
1000 micron size
Requires NDA signed by us
They do not like n_sub implant;
however, this make IV tests
more complicated
Thomas Bergauer (HEPHY Vienna)
12
Open Points: p-stop layout
combined
p-stops connected
p-stops isolated
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
13
Micron Wafer Layout (to be confirmed)
Quadratic baby sensors 2,3,4
p-side: 512 strips
50 µm pitch
1 interm. strip
n-side: 256 strips
100 µm pitch
0 interm. strip
different p-stop patterns
1) atoll p-stop
varying distance from strip
3 different GCDs
for the n-side
Main sensor
p-side: 768 strips
75-50 µm pitch
1 interm. strip
n-side: 512 strips
240 µm pitch
1 interm. strip
combined p-stop
2) conventional p-stop
varying width
3) combined p-stop
varying distance from strip
Teststructures
for p-side
Baby sensor 1
p-side: 512 strips
50 µm pitch
1 interm. strip
n-side: 512 strips
100 µm pitch
1 interm. strip
atoll p-stop
1)
2)
Teststructures
for n-side
(no GCD)
3)
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
14
Micron Wedge DSSD - Summary
[µm]
number
pitch
Implant
width
AL width
AC pad
DC Pad
Remarks
P strip
(readout)
768
75 – 50
14
20
50 x 200
42 x 108
AC pads: 2 rows, staggered
DC pads: 1 row, staggered
N strip
(readout)
512
240
30
40
260 x 60
180 x 60
AC pads: 2 rows, not staggered
DC pads: 1 row, not staggered
Bias ring
1
75
95
MGR
3
tbd.
tbd.
Edge ring
1
tbd.
tbd.
•
•
dicing edge
One intermediate strip on both p-side and n-side
Outer dimensions:
– Width on top:
– Width on bottom:
– Length:
•
symmetric
60.15 ± 0.05 mm
40.60 ± 0.05 mm
125.11 ± 0.05 mm
Note: all dimension values are preliminary, i.e. they are subject to discussion
and are awaiting final confirmation by Micron!
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
15
Schedule
• Most urgent: agree on open points with Micron
to start production as fast as possible
• Wait for delivery
– Hamamatsu: end of March 2010
– Micron: Summer 2010
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
16
Future next steps with prototype DSSDs
• Electrical Characterization in Vienna
• Build Origami module with HPK sensors
• Build full ladder comprising
– several Origami modules
– slanted module with Micron sensor
• Testbeam in autumn 2010 at CERN
• Irradiation tests of sensors
– Together with electronics?
– Where? When?
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
17
THE END.
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
18
P-Side, AC and DC pads
Marker with 10 µm
diameter (easily
adjustable) on every
128th AC pad
AC pads: 50 x 200 µm,
2 staggered rows
DC pads: 42 x 108 µm
1 staggered row
•
As long as the pad pitch within each row is constant, different
pitches in different pad rows do not cause problems for bonding.
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
19
N-Side, P-Stop pattern (implants only)
Individual
P-Stop atoll
N+ implant
of strip
Additional P-Stop
„strip“ splitting the
accumulation layer
•
According to Y. Iwata et al., this “combined pattern” performs best for a tradeoff
between charge collection efficiency and interstrip capacitance.
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
20
N-Side, AC and DC pads
•
•
AC pad size: 260 x 60 µm, marker on every 128th pad, 2 rows, no staggering
DC pad size: 180 x 60 µm, 1 row, no staggering
19. Nov. 2009
Thomas Bergauer (HEPHY Vienna)
21