Transcript Document

AUIRS2016S HIGH SIDE DRIVER WITH
INTERNAL VS RECHARGE
The AUIRS2016S is a high-voltage power MOSFET
high-side driver featuring an internal Vs-to-GND
recharge NMOS. The device’s output driver features a
250mA high pulse current buffer stage. The channel
can be used to drive an N-channel power MOSFET in
the high-side configuration, operating up to 150V
above ground. The new IC uses a proprietary latch
immune CMOS technology featuring exceptional
negative Vs immunity to deliver the ruggedness and
reliability essential for harsh environments and
automotive under-the-hood applications.
PRESS
RELEASE
DATA SHEET
HI-RES
GRAPHIC
Automotive
HOME PAGE
Features
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One high side output and internal low-side Vs
recharge
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CMOS Schmitt trigger inverted input with pull
up resistor
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CMOS Schmitt trigger inverted reset with pull
down resistor
•
5V compatible logic level inputs
•
Immune to –Vs spike and tolerant to dVs/dt
Advantages
• Proprietary HVIC technology enables ruggedized monolithic
construction and an industry benchmarking negative voltage spike
immunity for fail proof operation even under extreme switching
conditions and short circuit events.
• The IC is qualified according to AEC-Q100 standards and features
an environmentally friendly, lead-free and RoHS compliant bill of
material and are part of International Rectifier’s Zero-Defect
initiative.
• The AUIRS2016S is set up to be in line with typical change
management requirements of the automotive market.