Transcript Sill Torres: Microelectronics

Microelectronics Today Problems and Solutions
Frank Sill Torres
OptMAlab / ART
Universidade Federal de Minas Gerais (UFMG), Brazil
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About Me
 I’m German
(from the NorthEast)
 Master / PhD. in Electrical Engenering / Microelectronics
(Universität Rostock, Germany)
 Research areas:
– Low Power Integrated Circuit (IC) Design
– IC Design for Reliability (analog / digital)
– Nanoelectronics
– ...
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Outline
1. Areas of Microelectronics
2. Chip Design
3. State of the Art
4. Problems
5. Solutions
6. Microelectronics at UFMG and in Brazil
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Areas of Microelectronics
Process/Devices
 All activities related to chip fabrication
(Lithography, Etching, Ion Implantation,…)
 Design of new transistor devices (Bulk-CMOS,
SOI, FinFet,…)
 Work on materials for semiconductors
Clean room - UFMG
 MicroElectroMechanical Systems (MEMS), e.g.
– Microphone of the iPhone4
– Micro-lenses
 Related laboratory at UFMG / EE
– OptMAlab
Knowles S1950 MEMS Die
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Areas of Microelectronics
Circuits
 Design of integrated analog circuits
 Design of logic cells
 Design of integrated sensors and
actuators
 Related laboratories at UFMG / EE
Active pixel for digital camera (OptMAlab)
– OptMAlab
– OptMAlab / ART
high-Vth/Tox
low-Vth/Tox
Advanced low leakage cell (OptMAlab/ART)
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Areas of Microelectronics
Systems
 Design of integrated systems
– Application Specific Integrated Systems (ASIC)
– Processors
– System on Chip (SOC)
– Digital / Analog / Mixed-Signal
 Design of Intellectual Property (IP) blocks
 FPGA design
 Related laboratories at UFMG / EE
Copyright: ELV.de
– OptMAlab / ART
– LSI
– LabSCI
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Chip Design
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Chip Design
Standard Designflow
VHDL, SystemC …
Textual description of the design
Synthesis
Mapping of the design onto logic cells
Floorplanning
Planing of basic structure of the chip
(Size, I/O, power supply, blocks, …)
Placement
Placement of logic cell on chip
Routing
Wiring of logic cells
Production
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ASIC Design
Task Description
 Up to 25 years ago: chips developed on
drawing board
 End of 80‘s: Hardware Description
Languages (HDL)
– Verilog - 1985
– VHDL - 1987
 Newest developments
– Object orientated approach
– SystemC
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ASIC Design
Representation with logic cells
 Called: Synthesis
 Conversion of high-level description into logic cells
 Happens automatic by special tools
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Chip Design
Synthesis – Tool (Synopsys DesignVision)
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Chip Design
Determination of Chip Sizes
 Called: Floorplanning
 Planning of basic structure of the chip (Size, Inputs/Outputs,
power supply, blocks)
 What decides the chip size?
PAD-limited
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CORE-limited
BLOCK-limited
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Chip Design
Floorplanning – Tool (Cadence Second Encounter)
Menu
Layer
selection
Tools
Coordinates
Overview
window
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Control
output
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Chip Design
Placement
 Placement of logic cells
 Usually: Standard cells
 Uniform cell height
 Different widths
 Tool support
Copyright: Weste, 2011
Copyright: Yu, UC Davies
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Chip Design
Placement - Example
Copyright: Yu,
UC Davies
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Chip Design
Routing
 Placing of wires that connect logic cells
 Two Phases:
– Global Routing
– Detailed Routing
 Tool support
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Chip Design
Routing - Examples
Ref.: Wikipedia
Copyright: Yu, UC Davies
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Chip Design
Fabrication
 Design project saved as file (e.g. GDS2) → sent to fab
 Fab:
– Fabrication, packing, and testing
– Very expensive (e.g. Intel 14 nm - USD 5 Billion,
GlobalFoundries 28 nm – USD 4.6 Billion, source: Wikipedia)
CEITEC S.A., Rio Grande do Sul
(Work in Progress, 0.6 um)
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Chip Design
Design Houses
 In the past
– Chip designer and factories together
– Intellectual Property belongs to factory
 Today
– Chip designers and factories separate
– Intellectual Property stays with designer
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State of the Art
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State of the Art
Overview
 Technology sizes: starting from 22 nm
 Processors with 64 bit
 Multi-cores
 Processors for
– Servers (Opteron, Xeon, …)
– PCs (Core i3/i5/i7, Fusion, …)
– Smartphones / Pads (ARM, Atom, ...)
 High integration of functionalities
– Memory controller
– Graphic card
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State of the Art
Processors
[Mill.]
Transistors [Mill.]
Transistors
130 nm
400
400
90 nm
300
300
100
100
0
0
100 nm
Yonah
65 nm
151 Mill.
200
200
150 nm
Technology
Wolfdale
410 Mill.
500
500
Prescott
125 Mill.
45 nm
50 nm
Northwood
55 Mill.
Yonah,
151 Mill.
0 nm
2002
2002
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2004
Year
Year
2006
2006
2008
2008
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State of the Art
Dimensions
m
10
cm
100
nm
10
111mm
cm
µm
µm
Source: „Spektrum der Wissenschaften“
„22 nm“-Transistor
Source: Intel
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Problems
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Problems
Power Dissipation
SoC Consumer Portable Power Trend [Source: ITRS, 2010 Update]
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Problems
Power Density
Nuclear Reactor →
←Hot Plate
Source: http://cpudb.stanford.edu/
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Problems
Leakage
MOS-Transistor: Basic Element
Conducting:
Closed (ideal):
Closed (real):
 Current flow
 No Current
 Still current flow
 Dynamic power
dissipation
 No power dissipation
 Until early 2000‘s
dominating
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(Leakage)
 Power dissipation
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Problems
Subthreshold Leakage Isub
Vgs <
>V
Vthth
 Threshold Voltage Vth
Gate
– Transistor characteristic
– If: „Gate-Source“-Voltage Vgs higher
than Vth
Gate
Drain
Source
Source
 Current between Drain and Source
Isub
Drain
– If: Vgs lower than Vth
 (ideal) No current
 Subthreshold leakage Isub
– Leakage between Drain and Source
when Vgs < Vth
– Based on:
 Short Channels
 Diffusion
 Thermionic Emission
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Diffusion
high
Concentration
Low
concentration
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Problems
Gate Leakage Igate
 Tunneling effect
Potential Energy
Energy
Potential
– Electromagnetic wave strikes at
barrier:
 Reflection + Intrusion into barrier
0
– If thickness is small enough:
 Wave interfuses barrier partially:
(Electrons tunnel through barrier)
 Gate oxide leakage Igate
Igate
– At transistors with Tox< 2 nm
Gate
Gateoxide
 Electrons tunnel through gate oxide
 Leakage current
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x
Tox
Source
Tox
Drain
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Problems
Process Failures
 Occur at production phase
 Based on
– Process Variations
– Particles
– …
Source: Mak
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Problems
Electromigration
 Transport of material caused
by the gradual movement of
ions in a conductor
Top View
Void
Metal 1
 Major failure mechanisms in
interconnects
Metal 1
 Proportional to width and
thickness of metal lines
 Inversely proportional to
current density
Whisker, Hillock
Cross Section View
Metal 1
Thick Oxide
Metal 2
Source: Plusquellic, UMBC
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Problems
Electromigration cont’d
Void in 0.45mm Al-0.5%Cu line
Source: IMM-Bologna
Whiskers in Sn
Source: EPA Centre
Hillocks in ZnSn
Source: Ku&Lin,2007
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Problems
Gate Oxide Breakdown
 Tunneling currents
Wear out of gate oxide
 Creation of conducting path
between Gate and Substrate,
Drain, Source
 Depending on electrical field
Source: Pey&Tung
over gate oxide, temperature
(exp.), and gate oxide
thickness (exp.)
 Also: abrupt damage due to
extreme overvoltage
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Source: Pey&Tung
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Problems
Soft Errors
Source: Automotive 7-8, 2004
1
 In 70’s observed: DRAMs occasionally flip bits for no apparent reason
 Ultimately linked to alpha particles and cosmic rays
 Collisions with particles create electron-hole pairs in substrate
 These carriers are collected on dynamic nodes, disturbing the voltage
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Problems
Soft Errors cont’d
 Internal state of node flips shortly
 If error isn’t masked by
– Logic: Wrong input doesn’t lead to wrong output
– Electrical: Pulse is attenuated by following gates
– Timing: Data based on pulse reach flipflop after clock transistion
 wrong data
FF
FF
FF
FF
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Problems
Delay [s]
Drain current IDS [pA]
Temperature Variations
Temperature [°C]
Threshold voltage Vth changes with temperature  drain-source current
changes  delay changes
Source: Burleson, UMASS, 2007
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Problems
Failures due to Increasing Delay

FF
Logic
FF
Data are
processed before

clock phase is over
Clk
Clock (Clk)

VDD↓, Temp.↑, ...
FF
Clk
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Logic too slow!
→ Data processing
FF

longer than clock
phase
→ Wrong Data in
next clock phase!
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Solutions
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Solutions
New Technologies
 For example: Intel
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Solutions
Basics: Delay and Power versus VDD
10
5
8
Pdyn
4
td
6
3
4
2
1
2
0
0
0.8
1
1.2
1.4
1.6
1.8
2
2.2
Relative Pdyn
Relative Delay td
6
2.4
Supply voltage (VDD)
Dynamic Power can be traded by delay
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Solutions
Adaptive Dynamic Voltage/Frequency Scaling (DVS/DFS)
 Slow down processor to fill idle time
 More Delay  lower operational voltage
Active
Idle
Active
Idle
Active
3.3 V
2.4 V
 Runtime Scheduler determines processor speed and selects
appropriate voltage
 Transitions delay for frequencies <150s
 Potential to realize 10x energy savings
 E.g.: Intel SpeedStep, AMD PowerNow, Transmeta Longrun
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Solutions
DVS/DFS with Transmeta LongRun
% of max powerl consumption
100
90
80
70
60
50
40
30
20
10
0
300
300 Mhz
0.80 V
Peak performance region
Typical operating region
400
433 Mhz
0.87 V
500
533 Mhz
0.95 V
600
700
667 Mhz
1.05 V
800
800 Mhz
1.15 V
900
900 Mhz
1.25 V
1000
1000 Mhz
1.30 V
Frequency (MHz)
Source: Transmeta
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Solutions
Clock Gating
 Most popular method for power reduction of clock signals and
functional units
 Gate off clock to idle functional units
 Logic for generation of disable signal necessary
 Strong reduction of dynamic power dissipation
clock
R
Functional
e
unit
g
disable
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Solutions
Clock Gating: Example
Without clock gating
30.6mW
With clock gating
8.5mW
0
5
10
15
VDE
20
25
MIF
DSP/
HIF
Power [mW]
 90% of FlipFlops clock-gated
DEU
896Kb SRAM
 70% power reduction by clock-gating
MPEG4 decoder
Source: M. Ohashi, Matsushita, 2002
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Solutions
Power-orientated Programming
Switched Capacitance (nF)
14000
12000
10000
Others
Functional Unit
Pipeline Registers
Register File
8000
6000
4000
2000
0
bubble.c
heap.c
quick.c
 Algorithms can differ in power dissipation
Source: Irwin, 2000
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Solutions
Basics: Stack Effect
 Transistor stack: at least two transistors in a row
 Based on behavior of internal nodes:
 The more transistors are non-conducting (off) the lower the leakage
Leakage Isub [nA]
10
8
6
4
2
0
1
2
3
4
Transistors off in stack
Source: Roy, “Lecture”
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Solutions
Sleep Transistors

Idea: Insertion of additional transistors
between logic block and supply lines
sleep
Vdd
Virtual Vdd
These transistors: connected with
SLEEP-signal

If circuit has nothing to do:
SLEEP signal is active: Stack effect
(additional off transistor in row to
other)

Mostly insertion only of 1 transistor
Circuit
sleep
Virtual Vss
Vss
Source: Kaijian Shi, Synopsys
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Solutions
Basics: Relation of Vth, Delay and Leakage
 Threshold Voltage Vth:
– Influence on sub-threshold leakage Isub
– Influence on delay of logic gates
160
120
55
Isub
50
45
80
40
40
0
0.25
35
0.27
0.29
0.31
0.33
0.35
Dealy [ps]
Leakage- -Isub
Isub [nA]
[nA]
Leakage
Inverter (BPTM 65 nm)
30
0.37
Threshold Voltage
[V] [V]
Threshold
VoltageVthNMOS
VthNMOS
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Solutions
Dual-Vth
“LVT”- Cells




Cells consist of transistors with low Vth
Low delay
High leakage
For critical paths
“HVT”- Cells




Cells consist of transistors with high Vth
Longer delay
Low leakage
For uncritical paths
 Leakage reduction at constant performance
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Solutions
Dual-Vth Example
LVT- Cells
HVT- Cells
Critical Path
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Solutions
Triple Module Redundancy (TMR)
Input
Logic L
A
Copy of
Logic L
B
Voter
Output
C
Copy of
Logic L
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Solutions
Self Adaptive Design
 Extend idea of clock domains to Adaptive Power Domains
 Tackle static process and slowly varying timing variations
 Control VDD, Vth (indirectly by body bias), fclk by calibration at
Power On
Test inputs
and
responses
fclk
Test
Module
VDD
Module
VBB
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Solutions
Reliability Enhancement via Sleep Transistors
 Basic idea: Reduction of degradation via module deactivation
 Problem: What to do at run-time?
Module 1
Instance 1
Module 2
SLEEP
Module 1
Instance 2
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MUX
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Opportunities in Brazil
and
Activities at UFMG
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Opportunities in Brazil
 CEITEC S.A. – Design House and Chip factory (Rio Grande do Sul)
 Over 22 Design Houses
– DHBH in Belo Horizonte
– MINASIC in Itajubá
– CTI, Eldorado, LSI-TEC, von Braun, …
 Many other companies, e.g.:
– AEGIS / SEMIKRON: Power devices
– SMART / HT Micron: Back-end for memories
– FREESCALE: Design center
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Opportunities in Brazil cont’d
 Minas Gerais
– InventVision - Optical Systems, FPGA
– Jasper - Verification
– CBS (wafer production) - planned
– CMinas (MEMS) - planned
– Foxconn (Displays) - planned
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Activities at UFMG / EE
OptMAlab





Laboratory for Optronics and Microtechnologies (OptMAlab)
Located at PPGEE / UFMG
Coordinator: Dr. Davies William de Lima Monteiro
Adaptive Optics: wavefront aberration, components and systems
Microelectronics: Analog Integrated-Circuit design  custom pixels,
image sensors and optical position-sensitive devices (PSDs)
 Micromachining: silicon wet processing  micro-optics
 Ophthalmic Optics: technology and characterization of intraocular
lenses
 Photovoltaics: alternative self-configurable cells
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Activities at UFMG / EE
OptMAlab - IC for read-out for infrared sensor
 CMOS AMS 0.35µm
 Chip area: 12 mm2
 3.3V e 5.0V
 > 90 pins
 > 60 structures
 Digital circuits
 Analog circuits
 Mixed-Signal Circuits
 Photo-diodes
 Photo-resistors
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Activities at UFMG / EE
OptMA - ART
 Asic-ReliabiTiy (OptMAlab / ART)
 Extension of OptMAlab at PPGEE/UFMG
 Coordinator: Frank Sill Torres
 Dedicated to reliability in micro- and nanoelectronics applications
 Activities in the field of
– Design for Reliability
– Low Leakage / Low Power Chip Design
– Development of CAD tools extensions
– Robust Nanoelectronics
 More information: www.asic-reliabity.com
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Activities at UFMG / EE
OptMA – ART / Reliable Adder
 CMOS AMS 0.35µm
 Chip area: 1 mm2
 3.3V
 > 10 pins
 Test structures
 Modified logic cells
 Sleep Transistors
 Prepared for
Controlled
Destruction
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LSI – Laboratório de Sistemas Inteligentes
 Projeto: Desenvolvimento de um Sistema de
Determinação de Atitude com Tolerância a Falhas para
Satélites de Baixa Órbita.
 Projeto Financiado pela AEB – Programa UNIESPAÇO
– Colaboradores: INPE, UFABC, OptMa
 Síntese do Projeto:
– O que é Atitude
– Satélites que operam em Baixa Órbita Terrestre
– O ambiente hostil a que os CIs são colocados em
funcionamento.
– Condições limitadoras: alta precisão de apontamento, baixa
potência, baixo peso, baixo custo e confiabilidade 99,99999%
durante a missão.
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LSI – Laboratório de Sistemas Inteligentes
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LSI – Laboratório de Sistemas Inteligentes
 Áreas de atuação da Microeletrônica:
– Entender e modelar o efeito de falhas em CIs.
 Diversidade de Dispositivos
 Diversidade de Arquiteturas
 Diversidade de Ambientes e Situações
– Emular o efeito de falhas em CIs.
– Mitigar o efeito das falhas dos CIs nos Sistemas que os
compreendem  Técnicas de Tolerância a Falhas
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LSI – Laboratório de Sistemas Inteligentes
 Equipe atual:
– Fernando Esquírio Torres (bolsista de mestrado CPDEE)
– Thalles Hermes R. Gomes (bolsista PET-EE)
– Wagno Alves Bragança J. (bolsista PET-EE)
– Bruno Henrique S. Guimarães (voluntário IC-EE)
– ... ????
 Contato:
– Prof. Ricardo de Oliveira Duarte Email: [email protected]
Sala pessoal: 2521
Sala do LSI: 2515
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LSI – Laboratório de Sistemas Inteligentes
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Thank you!
[email protected]
OptMAlab / ART
www.asic-reliability.com
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Solutions
Network on Chip
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