Transcript V DS - Weber State University

1
Course Outline
1. Chapter 1: Signals and Amplifiers
2. Chapter 3: Semiconductors
3. Chapter 4: Diodes
4. Chapter 5: MOS Field Effect Transistors (MOSFET)
5. Chapter 6: Bipolar Junction Transistors (BJT)
6. Chapter 2 (optional): Operational Amplifiers
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Chapter 5:
MOSFETs
Part I
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Introduction
 IN THIS CHAPTER WE WILL LEARN
 The physical structure of the MOS transistor and how
it works.
 How the voltage between two terminals of the
transistor control the current that flows through the
third terminal, and the equations that describe these
current-voltage characteristics.
 How the transistor can be used to make an amplifier,
and how it can be used as a switch in digital circuits.
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Introduction
4
 IN THIS CHAPTER WE WILL LEARN
 How to obtain linear amplification from the
fundamentally nonlinear MOS transistor.
 The three basic ways for connecting a MOSFET to
construct amplifiers with different properties.
 Practical circuits for MOS-transistor amplifiers that can
be constructed using discrete components.
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Introduction
 We studied two-terminal semi-conductor devices (e.g.
diode)
 Now we turn our attention to three-terminal devices
 They are more useful because they present multitude of
applications:
signal amplification, digital logic, memory, etc…
Buck Converter
(DC-DC)
Power Amplifier
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Op Amp
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Introduction
6
 Q: What, in simplest terms, is the
desired operation of a three-terminal
device?
 A: Employ voltage between two
terminals to control current flowing
in to the third.
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Introduction
 Q: What are two major types
of three-terminal
semiconductor devices?
 metal-oxide-semiconductor
field-effect transistor
(MOSFET)
 bipolar junction transistor
(BJT)
 Q: Why are MOSFET’s more
widely used?
 size (smaller)
 ease of manufacture
 consume less power
7
 MOSFET technology
 It allows placement of
approximately 2 billion
transistors on a single IC
 backbone of very large
scale integration (VLSI)
 It is considered preferable
to BJT technology for many
applications.
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5.1. Device Structure and Operation
 Figure 5.1. shows general structure of the n-channel enhancementtype MOSFET
Figure 5.1: Physical structure of the enhancement-type NMOS transistor: (a) perspective view, (b) cross-
section. Note that typically L = 0.03um to 1um, W = 0.1um to 100um, and the thickness of the oxide
Oxford University Publishing
layer
(tox(0195323033)
) is in the range of 1 to 10nm.
Microelectronic Circuits by Adel S. Sedra and Kenneth
C. Smith
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twoOperation
n-type doped
5.1. Device Structure and
regions (drain, source)
layer of SiO2 separates
source and drain
metal, placed on top of
SiO2, forms gate
electrode
one p-type doped region
Figure 5.1: Physical structure of the enhancement-type NMOS transistor: (a) perspective view, (b) cross-
section. Note that typically L = 0.03um to 1um, W = 0.1um to 100um, and the thickness of the oxide
Oxford University Publishing
layer
(tox(0195323033)
) is in the range of 1 to 10nm.
Microelectronic Circuits by Adel S. Sedra and Kenneth
C. Smith
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Layout of NMOS Transistor
10
Side View
(Fabricated
Device)
Top View
(Masks)
Ref: Lecture 9 – MOSFET, Microelectronic Devices and Circuits, Fall 2005, MIT OpenCourseWare
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5.1. Device Structure and Operation
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 The name MOSFET is derived from its physical structure
 However, many MOSFET’s do not actually use any “metal”,
polysilicon is used instead
 Another name for MOSFET is insulated gate FET, or IGFET
 The device is composed of two pn-junctions, however they maintain
reverse biasing at all times.
 Drain will always be at positive voltage with respect to source.
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5.1.2. Operation with Zero Gate Voltage
12
 With zero voltage applied to
gate, two back-to-back diodes
exist in series between drain
and source.
 “They” prevent current
conduction from drain to
source when a voltage vDS is
applied.
 yielding very high
resistance (1012ohms)
Figure 5.1: Physical structure
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5.1.3. Creating a Channel for Current Flow
13
 Q: What happens if (1) source
and drain are grounded and (2)
positive voltage is applied to
gate?
 step #1: vGS is applied to the
gate terminal, causing a
positive build-up of positive
charge along metal electrode.
 step #2: This build-up causes
free holes to be repelled from
region of p-type substrate
under gate.
Figure 5.2: The enhancement-type NMOS transistor
with a positive voltage applied to the gate. An n
channel is induced at the top of the substrate
beneath the gate
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5.1.3. Creating a Channel for Current Flow
14
 step #3: This migration results
in the uncovering of negative
bound charges, originally
neutralized by the free holes
 step #4: The positive gate
voltage also attracts electrons
from the n+ source and drain
regions into the channel.
Figure 5.2: The enhancement-type NMOS transistor
with a positive voltage applied to the gate. An n
channel is induced at the top of the substrate
beneath the gate
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this induced
channel is
5.1.3. Creating a Channel for Current
Flow
also known as an
inversion layer
 step #5: Once a sufficient
number of “these” electrons
accumulate, an n-region is
created…
 connecting the source and
drain regions
 step #6: This provides path for
current flow between D and S.
Figure 5.2: The enhancement-type NMOS transistor
with a positive voltage applied to the gate. An n
channel is induced at the top of the substrate
beneath the gate
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5.1.3. Creating a Channel for Current Flow
16
 threshold voltage (Vt) – is the
Vtn is used for n-type
minimum value of vGS required to
MOSFET, Vtp is used for
p-channel
form a conducting channel
between drain and source
 effective / overdrive voltage – is
 typically between 0.3 and
the difference between vGS applied
0.6Vdc
and Vt.
 field-effect – when positive vGS is  oxide capacitance (Cox) – is the
capacitance of the parallel plate
applied, an electric field develops
capacitor per unit gate area (F/m2)
between the gate electrode and
induced n-channel – the
(eq5.1) vOV  vGS  Vt
conductivity of this channel is
affected by the strength of field
 ox is permittivity of SiO2 3.45E11 F / m 
tox is thickness of SiO2 layer
 SiO2 layer acts as dielectric
(eq5.3) C ox 
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 ox
tox
in F / m2
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5.1.3. Creating a Channel for Current Flow
 Q: What is main requirement
for n-channel to form?
 A: The voltage across the
oxide layer must exceed Vt.
 For example, when vDS = 0…
 the voltage at every point
along channel is zero
 the voltage across the oxide
layer is uniform and equal
to vGS
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 Q: How can one express the
magnitude of electron charge
contained in the channel?
W and L represent width and length of channel respectively
(eq5.2) Q  C ox WL  vOV in C
 Q: What is effect of vOV on nchannel?
 A: As vOV increases, so
does the depth of the nchannel as well as its
conductivity.
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5.1.4. Applying a small vDS
 Q: For small values of vDS, how does one calculate iDS
( iD)?
n represents mobility of electrons at surface of the
n-channel in m2 / Vs
 nvDS 
(eq5.7) iD   C oxWvOV  
 in A
 L 
charge per unit
length of
n -channel
in C / m
electron
drift velocity
in m2 / Vs
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5.1.4. Applying a small vDS
 Q: What can be observed from equation (5.7)?
 A: For small values of vDS, the n-channel acts like a
variable resistance whose value is controlled by vOV
(vOV =vGS -vt)
W


(eq5.7) iD   nC ox  vOV  vDS in A
L


vDS
1
(eq5.8a) rDS 

in 
iD
W 
 nC ox    vOV
L 

process
transconductance aspect
ratio
parameter
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5.1.4. Applying a Note
small
v
DS vOV represents
that this
the depth of the n-channel what if it is not assumed to
be constant? How does this
equation
change?
VERY
Q: IMPORTANT
What do weequation
note from equation
(5.7)?
 A: For small values of vDS, the n-channel acts like a
variable resistance whose value is controlled by vOV.
W


(eq5.7) iD   nC ox  vOV  vDS in A
L


vDS
1
(eq5.8a) rDS 

in 
iD
W 
 nC ox    vOV
L 

process
transconductance aspect
ratio
parameter
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5.1.4. Applying a Small vDS
21
 Q: What is rDS?
 A: rDS is the channel resistance
 Q: What three factors is rDS dependent on?
 A: process transconductance parameter for NMOS
(nCox) – which is determined by the manufacturing
process
 A: aspect ratio (W/L) – which is dependent on size
requirements / allocations
 A: overdrive voltage (vOV) – which is applied by the
user
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kn is known as NMOS-FET
transconductance parameter
and is defined as nCoxW/L
1/rDS
low resistance, high vOV
high resistance, low vOV
Figure 5.4: The iD-vDS characteristics of the MOSFET in Figure 5.3.
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Microelectronic
Circuits
by
Adel S. Sedra applied
and Kenneth C. Smith
(0195323033)
when the voltage
between
and source
VDS is kept Suketu
small.
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5.1.5. Operation as vDS is Increased
23
 Q: What happens to iD when vDS increases beyond small
values?
 A: The relationship between them ceases to be linear.
 Q: How can this non-linearity be explained?
 step #1: Assume that vGS is held constant at value
greater than Vt.
 step #2: Also assume that vDS is applied and appears as
voltage drop across n-channel.
 step #3: Note that voltage decreases from vGS at the
source end of channel to vGD at drain end, where…
 vGD = vGS – vDS
 vGD = Vt + vOV – vDS
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avOV
avDS
The voltage differential
between both sides of nchannel increases with vDS.
Figure 5.5:Oxford
Operation
University Publishingof the enhancement NMOS transistor as vDS is
Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
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increased
note the average value
25
As vDS is increased,
the channel becomes
more tapered and
channel resistance
increases
Figure 5.6(a): For a MOSFET with vGS = Vt + vOV , application of vDS causes the voltage drop along the
channel to vary linearly, with an average value of 0.5vDS at the midpoint. Since vGD > Vt, the channel still
exists at the drain end. (b) The channel shape corresponding to the situation in (a). While the depth of
the channel at the source is still
proportional
to vOV,I the drain end is not.
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Q: How can this non-linearity be explained?
26
action: replace

vOV with vOV  12 vDS 


W
1
(eq5.7) iD   nC ox   vOV  2 vDS   vDS
 step #4: Define
L


iDS in terms of vDS


and vOV.
W

1

C
v

if vDS  vOV



n
ox
OV
2 vDS  vDS

L
iD is dependent on the

(eq5.7) iD  
W
1
apparent vOV (not vDS

C
v

otherwise



n
ox
OV
2 vDS  vDS

L

inherently) which does not
if vDS vOV then vDS vOV

change after vDS > vOV
W

1

C
v

if vDS  vOV



n
ox
OV
2 vDS  vDS

L
(eq5.14) iD  
in A
1
W

nC ox  vO2 V
otherwise


2
L
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Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
triode vs. saturation region
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saturation occurs
once vDS > vOV
W

1
triode:

C
v




n
ox
OV
2 vDS  vDS

L
(eq5.14) iD  
 saturation: 1  nC ox  W vO2 V
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 Publishing
2
L
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if vDS  vOV
in A
otherwise
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5.1.6. Operation for vpinch-off
>>
v
does
DS
OV not mean
blockage of current
 In section 5.1.5, we assume
that n-channel is tapered but
channel pinch-off does not
occur.
 Trapezoid doesn’t become
triangle for vGD > Vt
 Q: What happens if vDS > vOV?
 A: MOSFET enters
saturation region.
 Any further increase in
vDS has no effect on iD.
Figure 5.8: Operation of MOSFET with vGS = Vt +
vOV as vDS is increased to vOV. At the drain end, vGD
decreases to Vt and the channel depth at the drainend reduces to zero (pinch-off). At this point, the
MOSFET enters saturation more of operation.
Further increasing vDS (beyond vOV) has no effect on
the channel shape and iD remains constant.
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Summary
 The equation used to
define iD depends on
relationship btw vDS
and vOV.
 vDS << vOV
 vDS < vOV
 vDS => vOV
 vDS >> vOV
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n represents mobility of electrons at surface of the
n-channel in m2 / Vs
 v 
(eq5.7) iD   C oxWvOV   n DS  in A
 L 
charge per unit
length of
n -channel
in C / m
electron
drift velocity
in m2 / Vs
W
(eq5.14) iD   nC ox   vOV  12 vDS  vDS in A
L
W 2
1
in A
(eq5.17) iD   nC ox  vOV
L
2
W 2
1
(eq5.23) iD   nC ox  vOV 1  vDS  in A
L
2
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n-channel MOSFET (NMOS)
30
 Figure 5.11 shows an nchannel enhancement
MOSFET.
 There are four terminals:
 drain (D), gate (G),
body (B), and source
(S).
 Usually it is assumed
that body and source are
connected.
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n-channel MOSFET (NMOS)
Gap indicates insulation (oxide) between
the gate electrode (G) and the Body (B)
This arrow from Body (p-type) to the nchannel (n-type) indicates pn junction and
hence the type of device (n channel mosfet)
This arrow indicates the current going into the
source and thus indicates the type of device
(n channel mosfet)
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NMOS Symbol
 Although MOSFET is
symmetrical device, one often
designates terminals as source
and drain.
 Q: How does one make this
designation?
 A: By polarity of voltage
applied.
 Arrowheads designate
“normal” direction of current
flow
 Note that, in part (b), we
designate current as DS.
 No need to place arrow
with B.
the potential at drain (vD) is
always positive with respect to
source (vS)
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NMOS Symbol
 Although MOSFET is
symmetrical device, one often
designates terminals as source
and drain.
 Q: How does one make this
designation?
 A: By polarity of voltage
applied.
 Arrowheads designate
“normal” direction of current
flow
 Note that, in part (b), we
designate current as DS.
 No need to place arrow
with B.
the potential at drain (vD) is
always positive with respect to
source (vS)
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Representations of NMOS Transistor
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Regions of Operation of Enhancement NMOS
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Tabe 5.1
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iD -vDS characterstics of Enhancement NMOS
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 Keep vGS constant
and vary vDS
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iD -vGS characterstics of Enhancement NMOS
 Keep vDS constant (vDS >
vOV; saturation) and vary
vGS
 These charactertics are
useful for amplification
2
vOV
1 W 
2
(eq5.21) iD  kn    vGS  Vtn 
2  L 
this relationship provides
basis for application of
MOSFET as amplifier
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iD -vGS characterstics of Enhancement NMOS
 Vary vGS
 Voltage controlled
current Source
 Useful for
amplification
2
vOV
1 W 
2
(eq5.21) iD  kn    vGS  Vtn 
2  L 
this relationship provides
basis for application of
MOSFET as amplifier
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Large signal model of NMOS in saturation
MOSFET in saturation behaves as a voltage controlled
current source
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Example 5.2: NMOS Transistor
Consider an NMOS transistor fabricated in an 0.18-m process with L
= 0.18m and W = 2m. The process technology is specified to have
Cox = 8.6fF/m2, n = 450cm2/Vs, and Vtn = 0.5V.
Q(a): Find VGS and VDS that result in the MOSFET operating at the
edge of saturation with ID = 100A
Q(b): If VGS is kept constant, find VDS that results in ID = 50A
Q(c): To investigate the use of the MOSFET as a linear amplifier, let
it be operating in saturation with VDS = 0.3V. Find the change in iD
resulting from vGS changing from 0.7V by +0.01V and -0.01V
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5.2.4. Finite Output Resistance in Saturation
41
Q: What effect will increased
vDS have on n-channel once
pinch-off has occurred?
A: Addition of finite output
resistance (ro).
Figure 5.16: Increasing vDS beyond vDSsat causes
the channel pinch-off point to move slightly away
from the drain, thus reducing the effective channel
length by DL
Q: What is the effect on iD?
valid when vDS vOV
1
W 2
(eq5.17) iD   nC ox  vOV in A
2
L
1
W 2
(eq5.23) iD   nC ox  vOV
1  vDS  in A
2
L
valid when vDS vOV
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5.2.4. Output Resistance in Saturation
42
Q: How is ro defined?
 step #1: Note that ro is the
1/slope of iD-vDS characteristic.
 step #2: Define relationship
between iD and vDS using
(5.23).
 step #3: Take derivative of
this function.
 step #4: Use above to define
ro.
 Note that ro is defined in terms of
iD, where iD does not take in to
account channel length
modulation
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5.2.4. Finite Output Resistance in Saturation
43
Q: What is ?
 A: A device parameter with
the units of V -1, the value of
which depends on
manufacturer’s design and
manufacturing process.
 Figure 5.17 demonstrates the
effect of channel length
modulation on iD - vDS curves
 In short, we can draw a
straight line between VA and
saturation.
Figure 5.17: Effect of vDS on iD in the
saturation region. The MOSFET
parameter VA depends on the process
technology and, for a given process, is
proportional to the channel length L.
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Exercise 5.6: Channel length modulation effect
44
NMOS transistor fabricated in an 0.4-m process with W = 16 m , L =
0.8 m,VA' = 50 V/m, n Cox= 200 A/V2.
Q(a): Find VA and λ.
Q(b): Find ID if VOV = 0.5 V and VDS = 1 V.
Q(c): Find rO.
Q(b): Find the change in ID if VOV is increased by 2 V
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5.1.7. The p-Channel MOSFET
45
 Figure 5.9(a): cross-sectional
view of a p-channel
enhancement-type MOSFET.
 structure is similar but
current is opposite to the
n-channel
 Complementary devices –
two devices such as the pchannel and n-channel
MOSFETs.
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5.1.7. The p-Channel MOSFET
46
 Q: What are main differences
between n-channel and pchannel?
 A: Negative voltage
applied to gate
 allowing path for
current flow
 A: Threshold voltage is
represented as Vtp
 |vGS| > |Vtp|
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5.1.7. The p-Channel MOSFET
47
 Q: What are main differences
between n-channel and pchannel?
 A: Process
transconductance
parameters are defined
differently
 k’p = pCox
 kp = pCox(W/L)
 A: The rest, essentially, is
the same, but with reverse
polarity...
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5.1.7. The p-Channel MOSFET
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PMOS Equations: Table 5.2
ID

I D ,tri

1
W
2
 pCox
VGS  Vtp (1   VDS )
2
L
W 
1 2 
  pCox
VGS  Vtp VDS  VDS 

L 
2

I D ,sat 




2
1
W
I D ,sat   pCox
VSG  Vtp 1   VSD 
2
L
W 
1
2
I D ,tri   pCox
V

V
V

V
SG
tp
SD
SD 
L 
2


EE 3110 Microelectronics I

Suketu Naik
5.1.7. The p-Channel MOSFET (PMOS)
50
 Q: Why is NMOS advantageous over PMOS?
 A: Because electron mobility n is 2 – 4 times greater
than hole mobility p.
 Complementary MOS (CMOS) technology – is
technology which allows fabrication of both N and
PMOS transistors on a single chip.
EE 3110 Microelectronics I
Suketu Naik
5.2.5. Characteristics of the p-channel MOSFET
51
 Characteristics of the pchannel MOSFET are similar
to the n-channel, however with
signs reversed.
 Please review section 5.2.5
from the text, with focus on
table 5.2.
EE 3110 Microelectronics I
Suketu Naik
iD-vDS Characteristics of the p-channel MOSFET
Fig.1 (a)
52
Fig.1 (b)
Fig.2(b)
Fig.2(a)
vGS
+
vDS
+
+
vGD
-
Note:
1) In Fig.1(a) and (b) VSG > 0, VSD > 0 and iD > 0
2) In Fig.2 (a) and (b) VGS < 0, VDS < 0 and iD < 0 (opposite direction than in Fig. 1
EE 3110 Microelectronics I
Suketu Naik
PMOS Transistor
53
Exercise 5.7: PMOS Transistor
 Vtp = -1 V, kp'=pCox = 60A/V2
 W/L = 10
(a) Find the range of VG in which transistor
conducts
(b) In terms of VG, find the range of VD for
which transistor is in triode region
(c) In terms of VG, find the range of VD for
which transitor is in saturation region
(d) Neglect channel length modulation
effect and find values of |VOV| and VG
EE 3110 Microelectronics I
Suketu Naik
54
5.1.8. Complementary MOS or CMOS
 CMOS employs MOS transistors of both polarities
 more difficult to fabricate
 more powerful and flexible
 now more prevalent than NMOS or PMOS by itself
Oxford University Publishing
Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
EE 3110 Microelectronics I
Suketu Naik
55
Figure 5.10: Cross-section of a CMOS integrated circuit. Note that the PMOS transistor is formed in a separate
n-type region, known as an n well. Another arrangement is also possible in which an n-type body is used and the
n device is formed in a p well. Not shown are the connections made to the p-type body and to the n well; the
latter functions as the body terminal for the p-channel device.
p-type semiconductor
provides the MOS body
(and allows generation of
n-channel)
Oxford University Publishing
n-well is added to allow
generation of p-channel
SiO2 is used to isolate
NMOS from PMOS
Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith (0195323033)
EE 3110 Microelectronics I
Suketu Naik