ME 597F: Micro- and Nano-Scale Energy

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Transcript ME 597F: Micro- and Nano-Scale Energy

ME 595M: Computational Methods for
Nanoscale Thermal Transport
Lecture 11:Extensions and
Modifications
J. Murthy
Purdue University
ME 595M J.Murthy
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Drawbacks
• Gray BTE




Cannot distinguish between different phonon polarizations
Isotropic
Relaxation time approximation does not allow energy transfers
between different frequencies even if “non-gray” approach were
taken
Very simple relaxation time model
• Numerical Method


“Ray” effect and “false scattering”
Sequential procedure fails at high acoustic thicknesses
• We will consider remedies for each of these problems in the
next two lectures
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Semi-Gray BTE
• This model is sometimes called the two-fluid model (Armstrong, 1981).
• Idea is to divide phonons into two groups
 “Reservoir mode” phonons do not move; capture capacitative effects
 “Propagation mode” phonons have non-zero group velocity and
capture transport effects. Are primarily responsible for thermal
conductivity.
• Ju (1999) used this idea to devise a model for nano-scale thermal
transport
• Model involves a single equation for reservoir mode “temperature” with
no angular dependence
• Propogation mode involves a set of BTEs for the different directions, like
gray BTE
• Reservoir and propagation modes coupled through energy exchange
terms
Armstrong, B.H., 1981, "Two-Fluid Theory of Thermal Conductivity of Dielectric
Crystals", Physical Review B, 23(2), pp. 883-899.
Ju, Y.S., 1999, "Microscale Heat Conduction in Integrated Circuits and Their
Constituent Films", Ph.D. thesis, Department of Mechanical Engineering,
Stanford University.
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Propagating Mode Equations
1
''
''
C
(
T

T
)

e
P
L
ref
p
e p
''
4

   (v p se p ) 
t

CP (TP  Tref ) 
''
e
 pd

Propagating model
scatters to a bath at
lattice temperature
TL with relaxation
time 

“Temperature” of
propagating mode,
TP, is a measure of
propagating mode
energy in all
directions together

CP is specific heat
of propagating
mode phonons
4
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Reservoir Mode Equation
CR
(TR  Tref )
t

CR (TL  Tref )  CR (TR  Tref )

 qvol
• Note absence of velocity term
• No angular dependence – equation is for total energy of
reservoir mode
• TR, the reservoir mode “temperature” is a measure of
reservoir mode energy
• CR is the specific heat of reservoir mode phonons
• Reservoir mode also scatters to a bath at TLwith
relaxation time 
• The term qvol is an energy source per unit volume – can be
used to model electron-phonon scattering
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Lattice Temperature
By definition, lattice temperature is a measure of the total
(reservoir +propagating mode) energy:
(CR  CP ) TL  Tref   CR TR  Tref   CP TP  Tref

Therefore:
CRTR  CPTP
TL 
(CR  CP )
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Discussion
• Model contains two unknown constants: vg and 
• Can show that in the thick limit, the model satisfies:
 CP  CR 
TL
1
   k TL  qvol with k  CP vg2
t
3
• Choose vg as before; find  to satisfy bulk k.
• Which modes constitute reservoir and propagating modes?



Perhaps put longitudinal acoustic phonons in propagating mode ?
Transverse acoustic and optical phonons put in reservoir mode ?
Choice determines how big  comes out
• Main flaw is that  comes out very large to satisfy bulk k

Can be an order-of-magnitude larger than optical-to-acoustic relaxation
times
• In FET simulation, optical-to acoustic relaxation time determines hot
spot temperature
• Need more detailed description of scattering rates
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Non-Gray BTE
• Details in Narumanchi et al (2004,2005).
• Objective is to include more granularity in phonon representation.
• Divide phonon spectrum and polarizations into “bands”. Each band has
a set of BTE’s in all directions
• Put all optical modes into a single “reservoir” mode.
• Model scattering terms to allow interactions between frequencies.
Ensure Fourier limit is recovered by proper modeling
• Model relaxation times for all these scattering interactions based on
perturbation theory (Han and Klemens,1983)
• Model assumes isotropy, using [100] direction dispersion curves in all
directions
Narumanchi, S.V.J., Murthy, J.Y., and Amon, C.H.; Sub-Micron Heat Transport Model in Silicon
Accounting for Phonon Dispersion and Polarization; ASME Journal of Heat Transfer, Vol. 126,
pp. 946—955, 2004.
Narumanchi, S.V.J., Murthy, J.Y., and Amon, C.H.; Comparison of Different Phonon Transport
Models in Predicting Heat Conduction in Sub-Micron Silicon-On-Insulator Transistors; ASME
Journal of Heat Transfer, 2005 (in press).
Han, Y.-J. and P.G. Klemens, Anharmonic Thermal Resistivity of Dielectric Crystals at Low
Temperatures. Physical Review B, 1983. 48: p. 6033-6042.
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Phonon Bands
Optical band
Acoustic bands
Each band characterized by
its group velocity, specific
heat and “temperature”
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Optical Mode BTE
e0

t
No ballistic term
– no transport
Nbands 1

j 1
  Toj
 
 oj   C0 dT  e0    qvol

  Tref

Energy exchange due to
scattering with jth acoustic
mode
Electronphonon
energy
source
oj is the inverse relaxation time for energy exchange between
the optical band and the jth acoustic band
Toj is a “bath” temperature shared by the optical and j bands.
In the absence of other terms, this is the common
temperature achieved by both bands at equilibrium
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Acoustic Mode BTE
Scattering to
same band
ei
   (vi sei )  (ei0  ei ) ii 
t
Tij

Nbands 

1



Ci dT  ei   ij 



Ballistic
 
j 1  4 Tref
 
term
j  i 
Energy exchange with
other bands
ij is the inverse relaxation time for energy exchange between
bands i and j
Tij is a “bath” temperature shared by the i and j bands. In the
absence of other terms, this is the common temperature
achieved by both bands at equilibrium
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Lattice Temperature
etotal 
TL
C
total
Tref
dT 
To
Nbands 1
 C dT  
o
Tref
i 1
 Ti

  Ci dT 


 Tref

• Lattice “temperature” is a measure of the energy in all
acoustic and optical modes combined
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Model Attributes
• Satisfies energy conservation
• In the acoustically thick limit, the model can be shown to
satisfy
Ctotal
TL
   ( K TL )  qvol
t
K
Nbands 1

i 1
1 vi 2Ci (TL )
3 Nbands
(   ij )
Fourier heat
diffusion
equation
Thermal
conductivity
j 1
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Properties of Full-Dispersion Model
In acousticallythick limit, full
dispersion model
• Recovers Fourier
conduction in
steady state
• Parabolic heat
conduction in
unsteady state
1-D transient diffusion, with
3X3X1 spectral bands
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Silicon Bulk Thermal
Conductivity
Non-Gray Model
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Thermal Conductivity of Doped Silicon
Thin Films • 3.0 micron boron-doped
•
•
silicon thin films.
Experimental data is from
Asheghi et. al (2002)
p=0.4 is used for
numerical predictions
Boron dopings of 1.0e+24
and 1.0e+25 atoms/m3
considered
Full-Dispersion
Model
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Thin Layer Si Thermal Conductivity
Specularity
Factor p=0.6
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Thermal Modeling of SOI FET
Heat generation
region
(100nmx10nm) • Heat source assumed
known at 6x1017 W/m3 in
heat generation region
72 nm
Si
• Lower boundaries at 300K
SiO2
SiO2
1633 nm
315 nm
•Top boundary diffuse
reflector
•BTE in Si layer
•Fourier in SiO2 region
•Interface energy balance
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Temperature Prediction -- Full
Dispersion Model
Tmax =393.1 K
= 7.2 ps for optical to
acoustic modes
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Mode Temperatures
Optical mode
Low frequency LA
mode
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Maximum Temperature Comparison
Model
Heat Gen.
In O-Mode
Heat Gen.
In A-Modes
Fourier
320.7 K
Gray
326.4 K
Semi-Gray
504.9 K
365.5 K
FullDispersion
393.1 K
364.4 K
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Conclusions
• In this lecture, we considered two extensions to the gray
BTE which account for more granularity in the
representation of phonons
• More granularity means more scattering rates to be
determined – need to invoke scattering theory
• Current models still employ temperature-like concepts not in
keeping with non-equilibrium transport
• Newer models are being developed which do not employ
relaxation time approximations, and admit direct
computation of the full scattering term
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