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• Gallium Nitride
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Aluminium gallium nitride
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Aluminium gallium nitride (AlGaN) is
a semiconductor material. It is an
alloy of aluminium nitride and
gallium nitride.
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Aluminium gallium nitride
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AlGaN is often used together with gallium
nitride or aluminium nitride, forming
heterojunctions.
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Aluminium gallium nitride - Safety and toxicity aspects
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The toxicology of AlGaN has not been fully
investigated. The AlGaN dust is an irritant
to skin, eyes and lungs. The environment,
health and safety aspects of aluminium
gallium nitride sources (such as
trimethylgallium and ammonia) and
industrial hygiene monitoring studies of
standard MOVPE sources have been
reported recently in a review.
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Gallium nitride
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Gallium nitride (GaN) is a binary III/V direct
bandgap semiconductor commonly used in
bright light-emitting diodes since the 1990s.
The compound is a very hard material that
has a Wurtzite crystal structure. Its wide band
gap of 3.4 eV affords it special properties for
applications in optoelectronic, high-power
and high-frequency devices. For example,
GaN is the substrate which makes violet (405
nm) laser diodes possible, without use of
nonlinear optical frequency-doubling.
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Gallium nitride - Physical properties
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Gallium nitride compounds also tend to
have a high spatial defect frequency, on
the order of a hundred million to ten billion
defects per square centimeter.
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Gallium nitride - Developments
The first gallium nitride metal
semiconductor field-effect transistors (GaN
MESFET) were experimentally
demonstrated in 1993 and they are being
actively developed.
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Gallium nitride - Developments
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In 2010 the first enhancement mode gallium
nitride transistors became generally
available. These devices were designed to
replace power MOSFETs in applications
where switching speed or power conversion
efficiency is critical. These transistors, also
called eGaN FETs, are built by growing a thin
layer of GaN on top of a standard silicon
wafer. This allows the eGaN FETs to maintain
costs similar to silicon power MOSFETs, but
with the superior electrical performance GaN.
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Gallium nitride - Safety
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GaN dust is an irritant to skin, eyes and
lungs. The environment, health and
safety aspects of gallium nitride
sources (such as trimethylgallium and
ammonia) and industrial hygiene
monitoring studies of MOVPE sources
have been reported recently in a review.
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Indium gallium nitride
Indium gallium nitride (InGaN,
InxGa1-xN) is a semiconductor
material made of a mix of gallium
nitride (GaN) and indium nitride
(InN). It is a ternary group III/group V
direct bandgap semiconductor. Its
bandgap can be tuned by varying the
amount of indium in the alloy. The
ratio of In/Ga is usually between
0.02/0.98 and 0.3/0.7.
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Indium gallium nitride - LEDs
Indium gallium nitride is the lightemitting layer in modern blue and green
LEDs and often grown on a GaN buffer on
a transparent substrate as, e.g. sapphire
or silicon carbide. It has a high heat
capacity and its sensitivity to ionizing
radiation is low (like other group III
nitrides), making it also a potentially
suitable material for solar photovoltaic
devices, specifically for arrays for
satellites.
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Indium gallium nitride - Safety and toxicity
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The toxicology of InGaN has not been
fully investigated. The dust is an
irritant to skin, eyes and lungs. The
environment, health and safety
aspects of indium gallium nitride
sources (such as trimethylindium,
trimethylgallium and ammonia) and
industrial hygiene monitoring studies
of standard MOVPE sources have been
reported recently in a review.
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